公开(公告)号：US20050201139A1

公开(公告)日：2005-09-15

申请号：US11121011

申请日：2005-05-04

申请人： Yasuhiro Shimada ,  Yoshihisa Kato ,  Keisuke Tanaka ,  Daisuke Ueda

发明人： Yasuhiro Shimada ,  Yoshihisa Kato ,  Keisuke Tanaka ,  Daisuke Ueda

IPC分类号： H01L27/105 ,  G11C11/22 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/108 ,  H01L27/115

CPC分类号： H01L27/11507 ,  H01L21/31691 ,  H01L27/11502 ,  H01L28/55

摘要： A memory device includes memory cells each having a capacitor including a lower electrode, a ferroelectric film and an upper electrode which are formed in this order over a substrate made of silicon. The ferroelectric film is selectively grown on the lower electrode. Such selective formation of the ferroelectric film on the lower electrode having a desired shape prevents a damaged portion from occurring in the ferroelectric film, thus making it possible to downsize the memory cells.

摘要翻译： 存储器件包括存储单元，每个存储单元具有在由硅制成的衬底上依次形成的下电极，铁电体膜和上电极的电容器。 在下电极上选择性地生长强电介质膜。 在具有所需形状的下电极上选择性地形成铁电体膜，可防止在铁电体膜中发生损坏部分，从而可以使存储单元小型化。

公开(公告)号：US20080099681A1

公开(公告)日：2008-05-01

申请号：US10589724

申请日：2004-02-17

申请人： Yasuhiro Shimada ,  Daisuke Ueda

发明人： Yasuhiro Shimada ,  Daisuke Ueda

IPC分类号： G01J5/00 ,  H01L21/00

CPC分类号： G01J5/20 ,  H01C7/045 ,  H01C17/08 ,  H01L27/14669 ,  H01L27/14683 ,  H01L31/09 ,  H01L31/109

摘要： First, an electrode is formed on an insulation layer that has been formed on a silicon substrate, when manufacturing an infrared detection device. The electrode has a shape matching that of a thermal resistance element constituting the infrared detection device. A semiconductor substrate is placed in a reaction chamber, given a predetermined potential, and heated. Next, a material of a thermal resistor substance constituting the thermal resistance element is vaporized into a gaseous material, and the gaseous material is ion-clusterized and supplied into the reaction chamber. The gaseous material collects toward the electrode as a result of an action of an electric field generated by giving the electrode the predetermined potential. The gaseous material that came into contact with the electrode is stabilized by receiving electrons, and thermally decomposes, thus growing a thermal resistor substance on the electrode.

摘要翻译： 首先，在制造红外线检测装置时，在形成于硅基板上的绝缘层上形成电极。 电极的形状与构成红外线检测装置的热电阻元件的形状一致。 将半导体衬底放置在反应室中，给定预定电位并加热。 接下来，构成热电阻元件的热电阻体的材料蒸发成气态物质，气态物质离子聚集并供给反应室。 由于通过给予电极预定电位而产生的电场的作用，气态材料朝向电极聚集。 与电极接触的气体材料通过接收电子而被稳定，并且热分解，从而在电极上生长热电阻物质。

公开(公告)号：US20070170485A1

公开(公告)日：2007-07-26

申请号：US11710435

申请日：2007-02-26

申请人： Yasuhiro Shimada ,  Daisuke Ueda

发明人： Yasuhiro Shimada ,  Daisuke Ueda

IPC分类号： H01L21/8242

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/65

摘要： A semiconductor memory device includes a plurality of memory cells. Each memory cell includes a capacitor which is composed of a first electrode, at least one particle made of ferroelectric or high dielectric constant material and selectively arranged on the first electrode, and a second electrode formed on the particle.

摘要翻译： 半导体存储器件包括多个存储单元。 每个存储单元包括由第一电极，至少一个由铁电或高介电常数材料制成的并选择性地布置在第一电极上的颗粒和形成在颗粒上的第二电极的电容器。

公开(公告)号：US20050156217A1

公开(公告)日：2005-07-21

申请号：US11000047

申请日：2004-12-01

申请人： Yasuhiro Shimada ,  Daisuke Ueda

发明人： Yasuhiro Shimada ,  Daisuke Ueda

IPC分类号： G11C11/22 ,  H01L21/02 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/65

摘要： A semiconductor memory device includes a plurality of memory cells. Each memory cell includes a capacitor which is composed of a first electrode, at least one particle made of ferroelectric or high dielectric constant material and selectively arranged on the first electrode, and a second electrode formed on the particle.

摘要翻译： 半导体存储器件包括多个存储单元。 每个存储单元包括由第一电极，至少一个由铁电或高介电常数材料制成的并选择性地布置在第一电极上的颗粒和形成在颗粒上的第二电极的电容器。

公开(公告)号：US6148172A

公开(公告)日：2000-11-14

申请号：US406378

申请日：1999-09-27

申请人： Takanori Kanda ,  Akira Kosugi ,  Keisuke Tanaka ,  Daisuke Ueda ,  Akitoshi Matsubara ,  Minoru Asakawa ,  Jun Yokobori ,  Chikatsu Suzuki ,  Takaaki Sakai ,  Junji Sato ,  Yoshinao Kitahara

发明人： Takanori Kanda ,  Akira Kosugi ,  Keisuke Tanaka ,  Daisuke Ueda ,  Akitoshi Matsubara ,  Minoru Asakawa ,  Jun Yokobori ,  Chikatsu Suzuki ,  Takaaki Sakai ,  Junji Sato ,  Yoshinao Kitahara

IPC分类号： B65H3/44 ,  B65H5/34 ,  B65H9/10 ,  G03G15/00

CPC分类号： B65H9/006 ,  B65H3/44 ,  B65H5/34 ,  B65H9/106 ,  G03G15/6529 ,  G03G15/6564 ,  G03G15/6567 ,  B65H2404/7231 ,  B65H2511/22 ,  G03G2215/00447 ,  G03G2215/00556

摘要： An image forming apparatus is provided with a plurality of storing units for storing respective recording materials of various sizes; a plurality of feeding members for feeding out the recording materials from each of the storing units; a conveyance path along which the recording materials being fed out by each of the feeding members are conveyed; a plurality of conveying members for conveying the recording materials along the conveyance path; an image forming section for forming an image on the recording materials conveyed along the conveyance path; and a plurality of first regulators provided at respective predetermined positions with respect to corresponding ones of each of the storing units for regulating at least a maximum size of the various sizes of the recording materials while at least at a part of each of the recording materials is fed out from the respective corresponding storing units.

摘要翻译： 图像形成装置设置有用于存储各种尺寸的各种记录材料的多个存储单元; 多个进给构件，用于从每个存储单元输出记录材料; 传送通过每个馈送部件馈送的记录材料的传送路径; 多个传送构件，用于沿着传送路径传送记录材料; 图像形成部，用于在沿着传送路径传送的记录材料上形成图像; 以及多个第一调节器，其相对于每个存储单元中的相应的预定位置设置，用于至少在每个记录材料的一部分处调节记录材料的各种尺寸的至少最大尺寸， 从相应的相应的存储单元馈送。

公开(公告)号：US08582277B2

公开(公告)日：2013-11-12

申请号：US13300952

申请日：2011-11-21

申请人： Hirobumi Tanaka ,  Makoto Endo ,  Satoko Ueda ,  Daisuke Ueda ,  Shogo Murosawa ,  Daisuke Yoshida ,  Kenta Ono ,  Minoru Ogasawara ,  Tatsuya Kikuchi

发明人： Hirobumi Tanaka ,  Makoto Endo ,  Satoko Ueda ,  Daisuke Ueda ,  Shogo Murosawa ,  Daisuke Yoshida ,  Kenta Ono ,  Minoru Ogasawara ,  Tatsuya Kikuchi

IPC分类号： H01G4/12 ,  C04B35/468

CPC分类号： H01G4/1227 ,  H01G4/1281 ,  H01G4/30

摘要： A multilayer ceramic electronic component comprising an element body in which a dielectric layer and an internal electrode layer are stacked. The dielectric layer is constituted from a dielectric ceramic composition including; a compound having a perovskite structure expressed by a formula of ABO3 (A is at least one selected from Ba, Ca, and Sr; B is at least one selected from Ti, Zr, and Hf); an oxide of Mg; an oxide of rare earth elements including Sc and Y; and an oxide including Si. The dielectric ceramic composition comprises a plurality of dielectric particles and a grain boundary present in between the dielectric particles. In the grain boundary, when content ratios of Mg and Si are set to D(Mg) and D(Si) respectively, D(Mg) is 0.2 to 1.8 wt % in terms of MgO, and D(Si) is 0.4 to 8.0 wt % in terms of SiO2.

摘要翻译： 一种多层陶瓷电子部件，其特征在于，具有层叠有电介质层和内部电极层的元件体。 电介质层由介电陶瓷组合物构成，包括： 具有由式ABO 3表示的钙钛矿结构的化合物（A是选自Ba，Ca和Sr中的至少一种; B是选自Ti，Zr和Hf中的至少一种）; Mg的氧化物; 包括Sc和Y的稀土元素的氧化物; 和包含Si的氧化物。 电介质陶瓷组合物包含存在于电介质颗粒之间的多个电介质颗粒和晶界。 在晶界中，当Mg和Si的含量比分别设定为D（Mg）和D（Si）时，D（Mg）以MgO计为0.2〜1.8重量％，D（Si）为0.4〜8.0 重量％。

公开(公告)号：US08307772B2

公开(公告)日：2012-11-13

申请号：US12656236

申请日：2010-01-21

申请人： Akifume Nakashima ,  Daisuke Ueda

发明人： Akifume Nakashima ,  Daisuke Ueda

IPC分类号： D05B23/00

CPC分类号： D05C7/00 ,  D05B29/06 ,  D05D2303/00

摘要： A sewing machine including a presser foot that presses a workpiece, a presser bar that has a lower end allowing detachable attachment of the presser foot; a presser bar vertically moving mechanism that moves the presser bar up and down; a presser bar driver that drives the presser bar vertically moving mechanism; a needle plate that has an upper surface for placing the workpiece; a projecting element that is detachably attached to the presser bar and that is driven up and down with the presser bar as the presser bar is driven up and down by the presser bar driver through the presser bar vertically moving mechanism to form embosses on the workpiece by downwardly pressing the workpiece; and a receiving section that is provided on the upper surface of the needle plate that opposes the projecting element to receive a tip of the projecting element.

摘要翻译： 一种缝纫机，包括按压工件的压脚，具有下端的压脚，允许压脚可拆卸地附接; 按压杆上下移动机构; 一个驱动压杆垂直移动机构的压脚驱动器; 具有用于放置所述工件的上表面的针板; 突出元件，其可拆卸地附接到压脚杆，并且当压杆作为压杆时上下驱动，压杆驱动器通过压杆垂直移动机构被上下驱动，以在工件上形成压花，以通过 向下按压工件; 以及接收部，其设置在与所述突出元件相对的所述针板的上表面上，以容纳所述突出元件的前端。

公开(公告)号：US08203376B2

公开(公告)日：2012-06-19

申请号：US12445390

申请日：2007-11-20

申请人： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Hiroaki Ueno ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Hiroaki Ueno ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H03K17/687

CPC分类号： H01L29/7787 ,  H01L27/0605 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/739 ,  H01L29/8124

摘要： A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.

摘要翻译： 半导体器件包括形成在衬底11上并具有沟道区的半导体层堆叠13，在半导体层叠层13上彼此隔开形成的第一电极16A和第二电极16B，形成在第一栅电极18A之间的第一栅电极18A 第一电极16A和第二电极16B，以及形成在第一栅电极18A和第二电极16B之间的第二栅电极18B。 在半导体层堆叠13和第一栅电极18A之间形成具有p型导电性的第一控制层19A。

公开(公告)号：US08134191B2

公开(公告)日：2012-03-13

申请号：US12160291

申请日：2006-07-11

申请人： Takumi Yamaguchi ,  Yuuichi Inaba ,  Daisuke Ueda ,  Yoshiyuki Matsunaga

发明人： Takumi Yamaguchi ,  Yuuichi Inaba ,  Daisuke Ueda ,  Yoshiyuki Matsunaga

IPC分类号： H01L31/09

CPC分类号： H04N9/045 ,  H04N5/33 ,  H04N5/332

摘要： A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.

摘要翻译： 一种使用可见光进行彩色成像并使用红外光成像的固态成像装置，所述固态成像装置包括多个二维排列的像素单元，每个像素单元中的每一个主要透过可见光和红外线之一 光，其中滤光器被布置成使得布置有主要透射可见光的多个滤光器的第一布置单元和布置有主要透射可见光的滤光器的第二单元和布置有主要透射红外光的滤光器的布置的第二单元是布置的， 交替地排列在行方向和列方向上。 此外，在第一单元中布置有包括发射红光，绿光和蓝光中的一种的三种滤光器的滤色器，并且在第二种布置中布置了四种滤色片，每种滤色片透过红光，绿光 ，蓝光和红外灯。

公开(公告)号：US08076698B2

公开(公告)日：2011-12-13

申请号：US11995040

申请日：2006-06-27

申请人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

发明人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

IPC分类号： H01L31/0328

CPC分类号： H01L29/739 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786

摘要： In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with the p-type contact layer 106, and a source electrode 108 and a drain electrode 109 provided on the undoped AlGaN layer 104. By applying a positive voltage to the p-type control layer 105, holes are injected into a channel to increase a current flowing in the channel.

摘要翻译： 在晶体管中，在蓝宝石衬底101上依次形成AlN缓冲层102，未掺杂的GaN层103，未掺杂的AlGaN层104，p型控制层105和p型接触层106。 晶体管还包括与p型接触层106欧姆接触的栅电极110以及设置在未掺杂的AlGaN层104上的源电极108和漏极109.通过向p型控制层105施加正电压 ，孔被注入到通道中以增加在通道中流动的电流。