发明申请
- 专利标题： Photovoltaic device
- 专利标题（中）： 光伏装置
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申请号： US11028312申请日： 2005-01-04
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公开(公告)号： US20050205127A1公开(公告)日： 2005-09-22
- 发明人: Toshiya Watanabe , Nobuki Yamashita , Youji Nakano , Saneyuki Goya , Satoshi Sakai , Yoshimichi Yonekura
- 申请人： Toshiya Watanabe , Nobuki Yamashita , Youji Nakano , Saneyuki Goya , Satoshi Sakai , Yoshimichi Yonekura
- 申请人地址： JP Tokyo
- 专利权人： MITSUBISHI HEAVY INDUSTRIES LTD.
- 当前专利权人： MITSUBISHI HEAVY INDUSTRIES LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-004574 20040109
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L31/0224 ; H01L31/04 ; H01L31/075 ; H01L31/076 ; H01L31/00
摘要：
A photovoltaic device is formed by depositing at least a first transparent electrode, PIN-structured or NIP-structured microcrystalline silicon layers, a second transparent electrode, and a back electrode in sequence on an electrically insulating transparent substrate. The PIN-structured or NIP-structured microcrystalline silicon layers include a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer. At least one of the first transparent electrode and the second transparent electrode is a ZnO layer doped with Ga, and the Ga concentration is 15 atomic percent or less with respect to Zn.