公开(公告)号：US20050205127A1

公开(公告)日：2005-09-22

申请号：US11028312

申请日：2005-01-04

申请人： Toshiya Watanabe ,  Nobuki Yamashita ,  Youji Nakano ,  Saneyuki Goya ,  Satoshi Sakai ,  Yoshimichi Yonekura

发明人： Toshiya Watanabe ,  Nobuki Yamashita ,  Youji Nakano ,  Saneyuki Goya ,  Satoshi Sakai ,  Yoshimichi Yonekura

IPC分类号： H01L21/28 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/00

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/548

摘要： A photovoltaic device is formed by depositing at least a first transparent electrode, PIN-structured or NIP-structured microcrystalline silicon layers, a second transparent electrode, and a back electrode in sequence on an electrically insulating transparent substrate. The PIN-structured or NIP-structured microcrystalline silicon layers include a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer. At least one of the first transparent electrode and the second transparent electrode is a ZnO layer doped with Ga, and the Ga concentration is 15 atomic percent or less with respect to Zn.

摘要翻译： 通过在电绝缘透明基板上依次沉积至少第一透明电极，PIN结构或NIP结构的微晶硅层，第二透明电极和背电极来形成光电器件。 PIN结构或NIP结构的微晶硅层包括p型硅层，i型硅层和n型硅层。 第一透明电极和第二透明电极中的至少一个是掺杂有Ga的ZnO层，并且Ga相对于Zn为15原子％以下。

公开(公告)号：US20100200052A1

公开(公告)日：2010-08-12

申请号：US12671254

申请日：2007-09-18

申请人： Nobuki Yamashita ,  Toshiya Watanabe ,  Satoshi Sakai ,  Youji Nakano

发明人： Nobuki Yamashita ,  Toshiya Watanabe ,  Satoshi Sakai ,  Youji Nakano

IPC分类号： H01L31/00 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/1884 ,  C23C14/0036 ,  C23C14/086 ,  H01L31/022483 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： An object of the present invention is to provide a photovoltaic device and a process for producing such a photovoltaic device that enable a stable, high photovoltaic conversion efficiency to be achieved by using a transparent electrode having an optimal relationship between the resistivity and the transmittance. At least one transparent electrode (12, 16) is either a ZnO layer containing no Ga or a Ga-doped ZnO layer in which the quantity of added Ga is not more than 5 atomic % relative to the Zn within the ZnO layer, and the ZnO layer is formed by a sputtering method using a rare gas containing added oxygen as the sputtering gas, wherein the quantity of oxygen added to the sputtering gas is not less than 0.1% by volume and not more than 5% by volume relative to the combined volume of the oxygen and the rare gas.

摘要翻译： 本发明的目的是提供一种光电器件及其制造方法，该光伏器件通过使用具有最佳电阻率和透射率之间的最佳关系的透明电极，能够实现稳定的高光电转换效率。 至少一个透明电极（12,16）是不含Ga的ZnO层或Ga掺杂的ZnO层，其中所添加的Ga的量相对于ZnO层内的Zn不超过5原子％，并且 通过使用含有添加的氧的稀有气体作为溅射气体的溅射法形成ZnO层，其中，相对于组合物，添加到溅射气体中的氧的量不小于0.1体积％且不大于5体积％ 体积的氧气和稀有气体。

公开(公告)号：US20060086386A1

公开(公告)日：2006-04-27

申请号：US11252994

申请日：2005-10-19

申请人： Youji Nakano ,  Nobuki Yamashita

发明人： Youji Nakano ,  Nobuki Yamashita

IPC分类号： H01L31/00

CPC分类号： H01L31/077 ,  Y02E10/50

摘要： A thin-film solar cell of a tandem type includes a first conductive layer formed on a transparent substrate to which a sun light is input; a top solar cell layer formed on the first conductive layer; and a bottom solar cell layer laminated on the top solar cell layer to be connected with the top solar cell in series. A total generation electric current of the thin-film solar cell layer is determined based on a generation electric current of the bottom solar cell layer.

摘要翻译： 串联型薄膜太阳能电池包括形成在输入太阳光的透明基板上的第一导电层; 形成在第一导电层上的顶部太阳能电池层; 以及层叠在与顶部太阳能电池串联连接的顶部太阳能电池层上的底部太阳能电池层。 基于底部太阳能电池层的发电电流来确定薄膜太阳能电池层的总发电电流。

公开(公告)号：US20060086385A1

公开(公告)日：2006-04-27

申请号：US11252987

申请日：2005-10-19

申请人： Youji Nakano ,  Nobuki Yamashita

发明人： Youji Nakano ,  Nobuki Yamashita

IPC分类号： H01L31/00

CPC分类号： H01L31/077 ,  Y02E10/50

摘要： A tandem thin film solar cell is composed of a first conductive layer formed on a transparent substrate; a first solar cell layer formed on the first conductive layer; and a second solar cell layer covering the first solar cell layer. The first conductive layer has surface irregularity, a pitch of the surface irregularity being in a range of 0.2 to 2.5 μm, and an amplitude of the surface irregularity being in a range of one-fourth to half of the pitch of the surface irregularity.

摘要翻译： 串联薄膜太阳能电池由形成在透明基板上的第一导电层构成; 形成在第一导电层上的第一太阳能电池层; 以及覆盖第一太阳能电池层的第二太阳能电池层。 第一导电层具有表面不规则性，表面凹凸的间距在0.2〜2.5μm的范围内，表面凹凸的振幅在表面凹凸的间距的四分之一到一半的范围内。

公开(公告)号：US20100269897A1

公开(公告)日：2010-10-28

申请号：US12672868

申请日：2009-01-09

申请人： Satoshi Sakai ,  Yuji Asahara ,  Yasuyuki Kobayashi ,  Masafumi Mori ,  Shigenori Tsuruga ,  Nobuki Yamashita

发明人： Satoshi Sakai ,  Yuji Asahara ,  Yasuyuki Kobayashi ,  Masafumi Mori ,  Shigenori Tsuruga ,  Nobuki Yamashita

IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/1884 ,  H01L31/022425 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/056 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： A photovoltaic device that exhibits improved light absorption properties for the electric power generation layer and a process for producing such a photovoltaic device are provided by optimizing the surface shape of the back surface structure. A photovoltaic device 100 comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 provided sequentially on a substrate 1, wherein the back electrode layer 4 comprises a thin film of silver, and the surface of the second transparent electrode layer 6 on the surface of the back electrode layer 4 has a fine uneven texture, for which the surface area magnification ratio relative to the projected surface area is not less than 10% and not more than 32%. Also, a photovoltaic device comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 provided sequentially on a substrate 1, wherein the back electrode layer 4 comprises a thin film of silver, the back electrode layer-side surface of the second transparent electrode layer 6 has a fine uneven texture, and the second transparent electrode layer 6 comprises needle-like crystals.

摘要翻译： 通过优化后表面结构的表面形状，提供了表现出对于发电层的改善的光吸收性能的光电器件和用于制造这种光伏器件的工艺。 光电器件100包括依次设置在基板1上的第一透明电极层2，发电层3，第二透明电极层6和背面电极层4，其中背面电极层4包括银的薄膜 并且背面电极层4的表面上的第二透明电极层6的表面具有微细的凹凸纹理，相对于投影表面积的表面积倍率不小于10％且不大于32 ％。 另外，包括依次设置在基板1上的第一透明电极层2，发电层3，第二透明电极层6和背面电极层4的光电器件，其中背面电极层4包括： 银，第二透明电极层6的背面电极层侧表面具有微细的凹凸纹理，第二透明电极层6包括针状晶体。

公开(公告)号：US20100229935A1

公开(公告)日：2010-09-16

申请号：US12671868

申请日：2009-01-07

申请人： Satoshi Sakai ,  Yuji Asahara ,  Yasuyuki Kobayashi ,  Masafumi Mori ,  Shigenori Tsuruga ,  Nobuki Yamashita

发明人： Satoshi Sakai ,  Yuji Asahara ,  Yasuyuki Kobayashi ,  Masafumi Mori ,  Shigenori Tsuruga ,  Nobuki Yamashita

IPC分类号： H01L31/0224 ,  H01L31/04 ,  H01L31/028

CPC分类号： H01L31/022466 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02631 ,  H01L31/022483 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/0547 ,  H01L31/0687 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/544

摘要： The short-circuit current of a photovoltaic device is improved by optimizing the transparent conductive layer. A photovoltaic device comprising a first transparent electrode layer, an electric power generation layer, a second transparent electrode layer and a back electrode layer on a substrate, wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the light absorptance for the second transparent electrode layer in a wavelength region from not less than 600 nm to not more than 1,000 nm is not more than 1.5%. Also, a photovoltaic device wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the reflectance for light reflected at the second transparent electrode layer and the back electrode layer is not less than 91% in the wavelength region from not less than 600 nm to not more than 1,000 nm.

摘要翻译： 通过优化透明导电层来改善光伏器件的短路电流。 一种光电器件，包括在基板上的第一透明电极层，发电层，第二透明电极层和背面电极层，其中所述第二透明电极层的膜厚度不小于80nm且不大于 100nm，并且在不小于600nm至不大于1000nm的波长区域中的第二透明电极层的光吸收率不大于1.5％。 此外，第二透明电极层的膜厚为80nm以上且100nm以下的光电转换装置，第二透明电极层和背面电极层的反射率为91以上 在不小于600nm至不大于1000nm的波长区域中的％。

公开(公告)号：US08088641B2

公开(公告)日：2012-01-03

申请号：US12993252

申请日：2008-10-30

申请人： Hiroshi Mashima ,  Koichi Asakusa ,  Akemi Takano ,  Nobuki Yamashita ,  Yoshiaki Takeuchi

发明人： Hiroshi Mashima ,  Koichi Asakusa ,  Akemi Takano ,  Nobuki Yamashita ,  Yoshiaki Takeuchi

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  C23C8/00

CPC分类号： H01L31/075 ,  H01L31/03762 ,  H01L31/0463 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.

摘要翻译： 一种制造光电器件的方法，其中当在i型非晶硅层上提供n型非晶硅层时，可以在不降低沉积速率的情况下实现期望的结晶比。 该制造方法包括沉积p型非晶硅层的p层形成步骤，在p型非晶硅层上沉积i型非晶硅层的i层形成步骤和n层形成 在i型非晶硅层上沉积n型非晶硅层的步骤，其中n层形成步骤包括在i型非晶硅层上沉积第一n层的第一n层形成步骤， 以及在第一n层上沉积第二n层的第二n层形成步骤，并且用于第一n层形成步骤的沉积条件是产生比第二n层的沉积条件更高的结晶比的条件 层形成步骤，用于沉积到相同的基底材料基底上。

公开(公告)号：US20110318871A1

公开(公告)日：2011-12-29

申请号：US13203935

申请日：2010-02-25

申请人： Nobuki Yamashita ,  Kengo Yamaguchi ,  Tatsuji Horioka

发明人： Nobuki Yamashita ,  Kengo Yamaguchi ,  Tatsuji Horioka

IPC分类号： H01L31/18

CPC分类号： C23C14/185 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/056 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： There are provided a thermal barrier coating material and a thermal barrier coating member that can suppress spalling when used at a high temperature and have a high thermal barrier effect, a method for producing the same, a turbine member coated with a thermal barrier coating, and a gas turbine. The thermal barrier coating member comprises a heat resistant substrate, a bond coat layer formed thereon, and a ceramic layer formed further thereon, wherein the ceramic layer comprises an oxide which consists of an oxide represented by the general formula A2Zr2O7 doped with a predetermined amount of CaO or MgO and has 10 volume % or more of a pyrochlore type crystal structure, where A represents any of La, Nd, Sm, Gd, and Dy.

摘要翻译： 提供了在高温下使用时具有高的隔热效果，能够抑制剥落的热障涂层材料及其制造方法，具有隔热涂层的涡轮部件，以及 一个燃气轮机。 隔热涂层构件包括耐热基材，形成在其上的粘合涂层和其上形成的陶瓷层，其中陶瓷层包括氧化物，该氧化物由掺杂有预定量的金属的通式A2Zr2O7表示， CaO或MgO，并且具有10体积％以上的烧绿石型晶体结构，其中A表示La，Nd，Sm，Gd和Dy中的任一种。

公开(公告)号：US20120090664A1

公开(公告)日：2012-04-19

申请号：US13378331

申请日：2010-06-23

申请人： Kengo Yamaguchi ,  Nobuki Yamashita

发明人： Kengo Yamaguchi ,  Nobuki Yamashita

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/548

摘要： A photovoltaic device in which leakage current is suppressed and the conversion efficiency is improved. A photovoltaic device (100) comprising a photovoltaic layer (3) comprising two electric power generation cell layers (91, 92) disposed on a substrate (1), and an intermediate contact layer (5) interposed between the two electric power generation cell layers (91, 92), wherein the intermediate contact layer (5) comprises Ga2O3-doped ZnO as the main component and also comprises nitrogen atoms, and the sheet resistance of the intermediate contact layer (5) following exposure to a hydrogen plasma is not less than 1 kΩ/square and not more than 100 kΩ/square.

摘要翻译： 其中泄漏电流被抑制并且转换效率提高的光电器件。 一种包括设置在基板（1）上的两个发电单元层（91,92）的光电转换层（3）的光电转换装置（100）以及置于两个电力发生单元层之间的中间接触层（5） （91,92），其中所述中间接触层（5）包括掺杂有Ga 2 O 3的ZnO作为主要成分并且还包含氮原子，并且在暴露于氢等离子体之后中间接触层（5）的薄层电阻不小于 大于1 k＆OHgr / / square，不大于100 k＆OHgr / / square。

公开(公告)号：US20120040494A1

公开(公告)日：2012-02-16

申请号：US13264277

申请日：2010-06-23

申请人： Kengo Yamaguchi ,  Nobuki Yamashita

发明人： Kengo Yamaguchi ,  Nobuki Yamashita

IPC分类号： H01L31/18

CPC分类号： C23C14/086 ,  C23C14/0036 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/50

摘要： A process for producing a photovoltaic device having high photovoltaic conversion efficiency by suppressing light absorption in the visible light short wavelength region. The process for producing a photovoltaic device (100) comprises a step of forming a substrate-side transparent electrode layer (2) on a substrate (1), a step of forming an intermediate contact layer (5) between two adjacent cell layers (91, 92), and a step of forming a backside transparent electrode layer (6) on a photovoltaic layer (3), wherein a transparent conductive film comprising mainly Ga-doped ZnO is deposited as the substrate-side transparent electrode layer (2), the intermediate contact layer (5) or the backside transparent electrode layer (6), under conditions in which the N2 gas partial pressure is controlled so that the ratio of N2 gas partial pressure relative to inert gas partial pressure per unit thickness of the transparent conductive film is not more than a predetermined value.

摘要翻译： 通过抑制可见光短波长区域中的光吸收而制造具有高光电转换效率的光伏器件的方法。 制造光电器件（100）的方法包括在基板（1）上形成基板侧透明电极层（2）的步骤，在两个相邻单元层（91）之间形成中间接触层（5）的步骤 ，92），以及在光电转换层（3）上形成背面透明电极层（6）的步骤，其中沉积了主要包含Ga的ZnO的透明导电膜作为衬底侧透明电极层（2）， 中间接触层（5）或背面透明电极层（6），在N2气体分压被控制的条件下，使N 2气体分压与透明导电性单位厚度的惰性气体分压之比 电影不超过预定值。