发明申请
US20050205910A1 Semiconductor device having ferroelectric memory and manufacturing method of the semiconductor device
审中-公开
具有铁电存储器的半导体器件和半导体器件的制造方法
- 专利标题： Semiconductor device having ferroelectric memory and manufacturing method of the semiconductor device
- 专利标题（中）： 具有铁电存储器的半导体器件和半导体器件的制造方法
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申请号： US10960029申请日： 2004-10-08
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公开(公告)号： US20050205910A1公开(公告)日： 2005-09-22
- 发明人: Yoshinori Kumura , Hiroyuki Kanaya , Tohru Ozaki
- 申请人： Yoshinori Kumura , Hiroyuki Kanaya , Tohru Ozaki
- 优先权： JP2004-074457 20040316
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; H01L21/00 ; H01L21/8246 ; H01L27/115 ; H01L29/76
摘要：
A transistor including a source/drain region is formed on a semiconductor substrate. A plug electrode is formed on the source/drain region. A conductive film is formed on the plug electrode. A first insulation film is formed on the conductive film. A lower electrode is formed on the first insulation film, and electrically connected to the conductive film formed on the plug electrode. A ferroelectric film is formed on the lower electrode. An upper electrode is formed on the ferroelectric film.