-
1.发明授权Semiconductor device having ferroelectric capacitor and method for manufacturing the same 失效具有铁电电容器的半导体器件及其制造方法公开(公告)号：US06762065B2
公开(公告)日：2004-07-13
申请号：US10448359
申请日：2003-05-30
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L21/31116 , H01L21/32136 , H01L27/11507 , H01L28/56 , H01L28/75
摘要： A lower electrode is formed on an insulating film on a semiconductor substrate. A pair of ferroelectric films are formed on the lower electrode separately from each other. An upper electrode is formed on each of the pair of ferroelectric films. A portion of the lower electrode on which the ferroelectric film is formed is thicker than a portion thereof on which the ferroelectric film is not formed. Such a structure is obtained by sequentially depositing the lower electrode, the ferroelectric film, and the upper electrode on the insulating film, forming a mask on the upper-electrode, using this mask to etch the upper-electrode and the ferroelectric film to thereby pattern a pair of upper electrodes and a pair of ferroelectric electrodes, forming such a mask that continuously covers the pair of upper electrodes and the pair of ferroelectric films, and then etching the lower-electrode material film.
摘要翻译： 在半导体衬底上的绝缘膜上形成下电极。 一对铁电体膜分别形成在下电极上。 在一对铁电体膜中的每一个上形成上电极。 形成铁电体膜的下部电极的一部分比不形成强电介质膜的部分厚。 通过使用该掩模在绝缘膜上依次沉积下电极，铁电体膜和上电极，在上电极上形成掩模，以蚀刻上电极和铁电体膜，从而形成图案 一对上电极和一对铁电电极，形成连续地覆盖一对上电极和一对铁电体膜的掩模，然后蚀刻下电极材料膜。
-
2.发明授权Semiconductor device having ferroelectric capacitor and method for manufacturing the same 失效具有铁电电容器的半导体装置及其制造方法公开(公告)号：US06603161B2
公开(公告)日：2003-08-05
申请号：US09801920
申请日：2001-03-09
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L21/31116 , H01L21/32136 , H01L27/11507 , H01L28/56 , H01L28/75
摘要： There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.
摘要翻译： 提供一种半导体器件，其具有形成在被绝缘体膜覆盖的半导体衬底上的铁电电容器，其中所述强电介质电容器包括：形成在所述绝缘膜上的底部电极; 形成在底部电极上的铁电体膜; 以及形成在强电介质膜上的顶部电极。 铁电体膜具有两层铁电体膜或三层铁电体膜的层叠结构。 上部铁电膜被金属化，并防止氢在下部铁电层中扩散。 堆叠的铁电体膜的晶粒优选不同。
-
3.发明申请Semiconductor device having ferroelectric memory and manufacturing method of the semiconductor device 审中-公开具有铁电存储器的半导体器件和半导体器件的制造方法公开(公告)号：US20050205910A1
公开(公告)日：2005-09-22
申请号：US10960029
申请日：2004-10-08
申请人： Yoshinori Kumura , Hiroyuki Kanaya , Tohru Ozaki
发明人： Yoshinori Kumura , Hiroyuki Kanaya , Tohru Ozaki
IPC分类号： H01L27/105 , H01L21/00 , H01L21/8246 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A transistor including a source/drain region is formed on a semiconductor substrate. A plug electrode is formed on the source/drain region. A conductive film is formed on the plug electrode. A first insulation film is formed on the conductive film. A lower electrode is formed on the first insulation film, and electrically connected to the conductive film formed on the plug electrode. A ferroelectric film is formed on the lower electrode. An upper electrode is formed on the ferroelectric film.
摘要翻译： 包括源极/漏极区域的晶体管形成在半导体衬底上。 插头电极形成在源极/漏极区域上。 在插头电极上形成导电膜。 在导电膜上形成第一绝缘膜。 在第一绝缘膜上形成下电极，与形成在插塞电极上的导电膜电连接。 在下电极上形成铁电体膜。 在铁电体膜上形成上部电极。
-
4.发明授权Semiconductor memory device having ferroelectric capacitors with hydrogen barriers 失效具有具有氢屏障的铁电电容器的半导体存储器件公开(公告)号：US07400005B2
公开(公告)日：2008-07-15
申请号：US11142441
申请日：2005-06-02
IPC分类号： H01L29/92
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.
摘要翻译： 一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜 电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二 氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。
-
5.发明授权Semiconductor memory device having ferroelectric capacitor and method of manufacturing the same 有权具有铁电电容器的半导体存储器件及其制造方法公开(公告)号：US07095068B2
公开(公告)日：2006-08-22
申请号：US10455376
申请日：2003-06-06
IPC分类号： H01L29/76 , H01L27/108
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A semiconductor memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate and including a first gate electrode and first and second diffusion layers, a first contact connected to the first diffusion layer, a first conductive oxygen barrier film electrically connected to the first contact and covering at least the upper surface of the first contact, a first ferroelectric capacitor including a first electrode, a second electrode, and a first ferroelectric film interposed between the first and second electrodes, and a first connecting member connected to the first electrode and to the first conductive oxygen barrier film.
摘要翻译： 半导体存储器件包括半导体衬底，形成在半导体衬底上的第一晶体管，包括第一栅电极和第一和第二扩散层，与第一扩散层连接的第一触点，与第一导电氧阻隔膜电连接的第一导电氧阻隔膜 首先接触并且至少覆盖第一接触件的上表面;第一铁电电容器，包括插入在第一和第二电极之间的第一电极，第二电极和第一铁电体膜;以及连接到第一电极的第一连接构件 和第一导电氧阻隔膜。
-
公开(公告)号：US20060180894A1
公开(公告)日：2006-08-17
申请号：US11142441
申请日：2005-06-02
IPC分类号： H01L29/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.
摘要翻译： 一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜 电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二 氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。
-
公开(公告)号：US06972990B2
公开(公告)日：2005-12-06
申请号：US10858441
申请日：2004-06-02
IPC分类号： H01L27/10 , G11C11/14 , G11C11/22 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/22 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L27/11509 , H01L28/57
摘要： A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.
摘要翻译： 铁电存储器件包括形成在半导体衬底上的栅电极，形成在半导体衬底中的第一和第二扩散层，与第一扩散层电连接的第一触点，具有第一氧阻隔膜， 绝缘性能，其形成在第一接触件上，与第一接触件电连接的第二接触件，形成在第二接触件上的具有绝缘性能的第二氧阻隔膜，具有下电极的铁电电容器 铁电膜和上电极，与上电极电连接的第三触点，与第二触头和第三触头电连接的第一互连件，以及具有绝缘性能的第三隔氧膜，其为 布置在铁电电容器和第二触点之间并与第一氧阻隔膜接触。
-
公开(公告)号：US20050207202A1
公开(公告)日：2005-09-22
申请号：US10858441
申请日：2004-06-02
IPC分类号： H01L27/10 , G11C11/14 , G11C11/22 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/22 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L27/11509 , H01L28/57
摘要： A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.
摘要翻译： 铁电存储器件包括形成在半导体衬底上的栅电极，形成在半导体衬底中的第一和第二扩散层，与第一扩散层电连接的第一触点，具有第一氧阻隔膜， 绝缘性能，其形成在第一接触件上，与第一接触件电连接的第二接触件，形成在第二接触件上的具有绝缘性能的第二氧阻隔膜，具有下电极的铁电电容器 铁电膜和上电极，与上电极电连接的第三触点，与第二触头和第三触头电连接的第一互连件，以及具有绝缘性能的第三隔氧膜，其为 布置在铁电电容器和第二触点之间并与第一氧阻隔膜接触。
-
公开(公告)号：US20100072525A1
公开(公告)日：2010-03-25
申请号：US12553923
申请日：2009-09-03
申请人： Yoshiro Shimojo , Tohru Ozaki , Yoshinori Kumura
发明人： Yoshiro Shimojo , Tohru Ozaki , Yoshinori Kumura
IPC分类号： H01L27/108 , H01L21/02
CPC分类号： H01L27/11512 , H01L27/11507 , H01L28/55
摘要： According to a method for manufacturing a semiconductor memory device of the present invention, a capacitor lower electrode film is left on the wiring layer located above a dummy transistor. In this manner, when processing of the capacitors is performed by removing a capacitor upper electrode film and a ferroelectric film, removal of the wiring layer can be prevented, and the connection between the diffusion layer of a select transistor and a bit line can be secured.
摘要翻译： 根据本发明的半导体存储器件的制造方法，在位于虚拟晶体管上方的布线层上留下电容器下电极膜。 以这种方式，当通过去除电容器上电极膜和铁电体膜来执行电容器的处理时，可以防止布线层的去除，并且可以确保选择晶体管的扩散层和位线之间的连接 。
-
公开(公告)号：US07214982B2
公开(公告)日：2007-05-08
申请号：US10959223
申请日：2004-10-07
申请人： Yoshinori Kumura , Iwao Kunishima , Tohru Ozaki
发明人： Yoshinori Kumura , Iwao Kunishima , Tohru Ozaki
IPC分类号： H01L27/108
CPC分类号： H01L29/945 , H01L27/11502 , H01L27/11507 , H01L29/66181
摘要： A semiconductor device including a ferroelectric random access memory, which has a structure suitable for miniaturization and easy to manufacture, and having less restrictions on materials to be used, comprises a field effect transistor formed on a surface area of a semiconductor wafer, a trench ferroelectric capacitor formed in the semiconductor wafer in one source/drain of the field effect transistor, wherein one electrode thereof is connected to the source/drain, and a wiring formed in the semiconductor wafer and connected to the other electrode of the trench ferroelectric capacitor.
摘要翻译： 包括具有适于小型化并易于制造并且对材料使用限制较少的结构的铁电随机存取存储器的半导体器件包括形成在半导体晶片的表面区域上的场效应晶体管，沟槽铁电体 电容器形成在场效应晶体管的一个源极/漏极中的半导体晶片中，其中一个电极连接到源极/漏极，以及形成在半导体晶片中并连接到沟槽铁电电容器的另一个电极的布线。
-
-
-
-
-
-
-
-
-
搜索结果
50 条记录 (耗时 0.033 秒)