There is provided a semiconductor integrated circuit device that enables an EMS-voltage withstanding margin to be significantly enhanced without increasing a chip-layout area etc. An input buffer section, a CR filter composed of a resistor and an electrostatic capacitor device, a Schmitt circuit, and a noise cancellation circuit are connected to a system control terminal of the semiconductor integrated circuit device. When a signal containing noise is inputted to the system control terminal, a peak of the noise is reduced by an input buffer composed of the Schmitt circuit provided in the input buffer section. Thereafter, the peak of the noise is further reduced by the CR filter. Subsequently, the signal passes through the Schmitt circuit, thereby being significantly removed.