发明申请
- 专利标题: Process for deposition of semiconductor films
- 专利标题(中): 半导体膜沉积工艺
-
申请号: US11124340申请日: 2005-05-06
-
公开(公告)号: US20050208740A1公开(公告)日: 2005-09-22
- 发明人: Michael Todd
- 申请人: Michael Todd
- 主分类号: C23C16/24
- IPC分类号: C23C16/24 ; C23C16/02 ; C23C16/42 ; C30B25/02 ; H01L21/20 ; H01L21/205 ; H01L21/28 ; H01L21/285 ; H01L21/316 ; H01L21/331 ; H01L21/337 ; H01L21/425 ; H01L21/469 ; H01L21/8238 ; H01L27/092 ; H01L29/51 ; H01L29/737 ; H01L29/78 ; H01L31/18 ; H01L31/20 ; H01L21/36
摘要:
Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, trisilane is employed to deposit SiGe-containing films that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
公开/授权文献
- US07186582B2 Process for deposition of semiconductor films 公开/授权日:2007-03-06