发明申请
- 专利标题： Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures
- 专利标题（中）： 用作半导体沟槽和通孔结构中的铜阻挡层的介电阻挡膜
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申请号： US11131003申请日： 2005-05-16
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公开(公告)号： US20050208758A1公开(公告)日： 2005-09-22
- 发明人: Hong-Qiang Lu , Peter Burke , Wilbur Catabay
- 申请人： Hong-Qiang Lu , Peter Burke , Wilbur Catabay
- 专利权人： LSI Logic Corporation
- 当前专利权人： LSI Logic Corporation
- 主分类号： H01L21/312
- IPC分类号： H01L21/312 ; H01L21/44 ; H01L21/4763 ; H01L21/768 ; H01L23/532
摘要：
The present invention is directed to improved dielectric copper barrier layer and related interconnect structures. One structure includes a semiconductor substrate having a copper line. An insulating layer formed of at least one of silicon and carbon is formed on the underlying copper line. An opening is formed in the insulating layer to expose a portion of the copper line. The inner surface of the opening in the insulating layer has a dielectric barrier layer formed thereon to prevent the diffusion of copper into the insulating layer. A copper plug is formed to fill the opening and make electrical contact with the underlying copper interconnect structure. Aspects of the invention also include methods for forming the dielectric copper barrier layers and associate copper interconnects to the underlying copper lines.
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