发明申请
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11096125申请日： 2005-03-30
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公开(公告)号： US20050211375A1公开(公告)日： 2005-09-29
- 发明人: Dirk Knotter , Johannes Van Wingerden , Madelon Rovers
- 申请人： Dirk Knotter , Johannes Van Wingerden , Madelon Rovers
- 优先权： EP01201595.4 20010427
- 主分类号： C23F1/24
- IPC分类号： C23F1/24 ; C09K13/04 ; C09K13/08 ; G03F7/09 ; H01L21/00 ; H01L21/027 ; H01L21/28 ; H01L21/306 ; H01L21/3065 ; H01L21/311 ; H01L21/3213 ; H01L29/423 ; H01L29/49 ; H01L29/78 ; H01L21/8242
摘要：
The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100° C.
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