发明申请
- 专利标题： Polishing slurries and methods for chemical mechanical polishing
- 专利标题（中）： 抛光浆料和化学机械抛光方法
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申请号： US11032717申请日： 2005-01-11
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公开(公告)号： US20050211953A1公开(公告)日： 2005-09-29
- 发明人: Sunil Jha , Sreehari Nimmala , Sharath Hegde , Youngki Hong , S.V. Babu , Udaya Patri
- 申请人： Sunil Jha , Sreehari Nimmala , Sharath Hegde , Youngki Hong , S.V. Babu , Udaya Patri
- 主分类号： C09G1/02
- IPC分类号： C09G1/02 ; C09K3/14 ; C23F3/06 ; H01L21/321 ; C09K13/00 ; C23F1/00
摘要：
Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3 dissolved in an oxidizing agent, and particles of MoO2 dissolved in an oxidizing agent.
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