发明申请
- 专利标题： Metal gate semiconductor device and manufacturing method
- 专利标题（中）： 金属栅极半导体器件及其制造方法
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申请号： US10810950申请日： 2004-03-25
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公开(公告)号： US20050212015A1公开(公告)日： 2005-09-29
- 发明人: Chien-Chao Huang , Kuang-Hsin Chen , Fu-Liang Yang
- 申请人： Chien-Chao Huang , Kuang-Hsin Chen , Fu-Liang Yang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L21/82 ; H01L21/8234 ; H01L27/02
摘要：
A method for manufacturing a metal gate includes providing a substrate including a gate electrode located on the substrate. A plurality of layers is formed, including a first layer located on the substrate and the gate electrode and a second layer adjacent the first layer. The layers are etched to form a plurality of adjacent spacers, including a first spacer located on the substrate and adjacent the gate electrode and a second spacer adjacent the first spacer. The first spacer is then etched and a metal layer is formed on the device immediately adjacent to the gate electrode. The metal layer is then reacted with the gate electrode to form a metal gate.
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