发明申请
- 专利标题： Semiconductor storage device and manufacturing method thereof
- 专利标题（中）： 半导体存储装置及其制造方法
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申请号： US11065306申请日： 2005-02-25
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公开(公告)号： US20050212035A1公开(公告)日： 2005-09-29
- 发明人: Yukihiro Utsuno , Manabu Nakamura , Kentaro Sera , Masahiko Higashi , Hiroyuki Nansei , Hideo Takagi , Tatsuya Kajita
- 申请人： Yukihiro Utsuno , Manabu Nakamura , Kentaro Sera , Masahiko Higashi , Hiroyuki Nansei , Hideo Takagi , Tatsuya Kajita
- 申请人地址： JP Fukushima
- 专利权人： FUJITSU AMD SEMICONDUCTOR LIMITED
- 当前专利权人： FUJITSU AMD SEMICONDUCTOR LIMITED
- 当前专利权人地址： JP Fukushima
- 优先权： JP2002-255527 20020830
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/8246 ; H01L21/8247 ; H01L27/115 ; H01L29/51 ; H01L29/788
摘要：
Tunnel insulating films (3) are formed in element regions demarcated by element isolation insulating films (2). Thereafter, for each memory cell, a floating gate (4) is formed, and an ONO film (5) and a control gate (6) are further formed. Next, a plasma insulating film (7) is formed on surfaces of stacked gates. The plasma insulating film is immune to plane orientation of a base film. Therefore, the entire plasma insulating film (7) has a substantially uniform thickness, and consequently, even if the maximum thickness thereof is not as large as that of a thermal oxide film, hydrogen entrance is prevented when the interlayer insulating film is thereafter formed, and electron leakage is also prevented. The reduction in thickness of this insulating film makes it possible to reduce birds' beaks, and efficiency in erase/write of data can be enhanced.