发明申请
- 专利标题： Reduction of channel hot carrier effects in transistor devices
- 专利标题（中）： 降低晶体管器件中的通道热载流子效应
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申请号： US11135544申请日： 2005-05-24
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公开(公告)号： US20050215018A1公开(公告)日： 2005-09-29
- 发明人: Pinghai Hao , Shanjen Pan , Sameer Pendharkar
- 申请人： Pinghai Hao , Shanjen Pan , Sameer Pendharkar
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/336 ; H01L21/338 ; H01L29/02 ; H01L29/08 ; H01L29/78 ; H01L47/00
摘要：
A transistor can be fabricated to exhibit reduced channel hot carrier effects. According to one aspect of the present invention, a method for fabricating a transistor structure includes implanting a first dopant into a lightly doped drain (LDD) region to form a shallow region therein. The first dopant penetrates the substrate to a depth that is less than the LDD junction depth. A second dopant is implanted into the substrate beyond the LDD junction depth to form a source/drain region. The implantation of the second dopant overpowers a substantial portion of the first dopant to define a floating ring in the LDD region that mitigates channel hot carrier effects.