发明申请
- 专利标题： Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device
- 专利标题（中）： 半导体发光器件的制造方法，半导体发光器件，半导体器件的制造方法，半导体器件，器件的制造方法以及器件
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申请号： US11148771申请日： 2005-06-09
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公开(公告)号： US20050227392A1公开(公告)日： 2005-10-13
- 发明人: Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
- 申请人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
- 优先权： JPP2001-315703 20011012
- 主分类号： C30B25/02
- IPC分类号： C30B25/02 ; H01L21/20 ; H01L33/00 ; H01L33/02 ; H01L33/16 ; H01L33/32 ; H01S5/02 ; H01S5/20 ; H01S5/22 ; H01S5/223 ; H01S5/323 ; H01S5/40 ; H01L21/00 ; H01L29/22
摘要：
When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.
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