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    EL SEMICONDUCTOR DEVICE
    7.
    发明申请
    EL SEMICONDUCTOR DEVICE 有权
    EL半导体器件

    公开(公告)号：US20090059985A1

    公开(公告)日：2009-03-05

    申请号：US12038062

    申请日：2008-02-27

    申请人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

    发明人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

    IPC分类号： H01S5/32

    CPC分类号： H01S5/327 ,  H01S5/0218 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3059

    摘要： An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppress the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.

    摘要翻译： 具有良好发光特性的n型包覆层结构，不使用与RoHS指令相对应的物质和高Cl掺杂效率，即有助于制造具有低晶体缺陷和高可靠性的半导体光学元件和器件，以及 提供了一种有源层及其p型覆层。 与InP基质晶格匹配并含有II-VI族化合物作为主要成分的n型层是II族化合物半导体，II族元素由Mg，Zn和Be组成，第VI族 元素由Se和Te组成。 本发明的n型层的特征在于具有大的能隙，能够有效地抑制II型发光，高载流子浓度和归因于良好质量结晶度的低晶体缺陷的导带底部的高能量 。

    Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device
    8.
    发明授权
    Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device 有权
    氮化物III-V族化合物半导体的生长方法，半导体装置的制造方法以及半导体装置

    公开(公告)号：US06682991B1

    公开(公告)日：2004-01-27

    申请号：US09448584

    申请日：1999-11-24

    申请人： Tomonori Hino ,  Takeharu Asano ,  Tsunenori Asatsuma ,  Satoru Kijima ,  Kenji Funato ,  Shigetaka Tomiya

    发明人： Tomonori Hino ,  Takeharu Asano ,  Tsunenori Asatsuma ,  Satoru Kijima ,  Kenji Funato ,  Shigetaka Tomiya

    IPC分类号： H01L2120

    CPC分类号： H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0332 ,  H01S5/2077 ,  H01S5/32341

    摘要： When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth mask may be combination of an oxide film and a nitride film thereon, combination of a metal film and a nitride film thereon, combination of an oxide film, a film thereon made up of a nitride and an oxide, and a nitride film thereon, or combination of a first metal film, a second metal film thereon different from the first metal film and a nitride film thereon, for example. The oxide film may be a Si02, for example, the nitride film may be a TiN film or a SiN film, the film made up of a nitride and an oxide may be a SiNO film, and the metal film may be a Ti film or a Pt film, for example.

    摘要翻译： 当在衬底上制造生长掩模并且使用生长掩模在衬底上选择性地生长氮化物III-V化合物半导体时，使用包括至少形成其顶表面的氮化物的多层膜作为生长掩模。 生长掩模可以是其上的氧化物膜和氮化物膜的组合，其上的金属膜和氮化物膜的组合，氧化物膜，由氮化物和氧化物组成的膜以及氮化物膜上的氮化物膜的组合 ，或第一金属膜，与第一金属膜不同的第二金属膜和其上的氮化物膜的组合。 氧化膜可以是SiO 2，例如，氮化膜可以是TiN膜或SiN膜，由氮化物和氧化物构成的膜可以是SiNO膜，并且金属膜可以是Ti膜或 例如Pt膜。

    EL semiconductor device
    10.
    发明授权
    EL semiconductor device 有权
    EL半导体器件

    公开(公告)号：US07899104B2

    公开(公告)日：2011-03-01

    申请号：US12038062

    申请日：2008-02-27

    申请人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

    发明人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

    IPC分类号： H01S5/00

    CPC分类号： H01S5/327 ,  H01S5/0218 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3059

    摘要： An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppressing the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.

    摘要翻译： 具有良好发光特性的n型包覆层结构，不使用与RoHS指令相对应的物质和高Cl掺杂效率，即有助于制造具有低晶体缺陷和高可靠性的半导体光学元件和器件，以及 提供了一种有源层及其p型覆层。 与InP基质晶格匹配并含有II-VI族化合物作为主要成分的n型层是II族化合物半导体，II族元素由Mg，Zn和Be组成，第VI族 元素由Se和Te组成。 本发明的n型层的特征在于具有大的能隙，导带的底部的高能量对于抑制II型发光，高载流子浓度和归因于良好质量结晶度的低晶体缺陷是有效的 。