发明申请
- 专利标题： Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element
- 专利标题（中）： 形成硅基薄膜，硅基薄膜和光电元件的方法
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申请号： US10101859申请日： 2002-03-21
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公开(公告)号： US20050227457A1公开(公告)日： 2005-10-13
- 发明人: Takaharu Kondo , Shotaro Okabe , Koichiro Moriyama , Takahiro Yajima , Takeshi Shishido
- 申请人： Takaharu Kondo , Shotaro Okabe , Koichiro Moriyama , Takahiro Yajima , Takeshi Shishido
- 优先权： JP082821/2001 20010322; JP075267/2002 20020318
- 主分类号： H01L31/04
- IPC分类号： H01L31/04 ; C30B1/00 ; C30B25/10 ; C30B29/06 ; H01L21/20 ; H01L21/205 ; H01L21/36 ; H01L31/075 ; H01L31/20
摘要：
A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiFα (440 nm) is not smaller than a luminous intensity attributed to Hα (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.
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