公开(公告)号：US07074641B2

公开(公告)日：2006-07-11

申请号：US10101859

申请日：2002-03-21

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

IPC分类号： H01L21/20

CPC分类号： H01L31/202 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiFα (440 nm) is not smaller than a luminous intensity attributed to Hα (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.

摘要翻译： 根据本发明的形成硅基薄膜的方法包括将含有氟化硅和氢的源气体引入真空容器中，并且使用高频等离子体CVD方法在引入的基底上形成硅基薄膜 进入真空容器，其中归因于SiFalpha（440nm）的发光强度不小于归因于Halpha（656nm）的发光强度，从而与常规光源元件相比，以低成本提供具有优异性能的光电元件， 在进一步提高的成膜速度下在短的工艺循环时间内形成具有优异特性的硅基薄膜的方法，通过该方法形成的硅基薄膜和包含硅基薄膜的光电元件 具有优异的特性，附着力和耐环境性。

公开(公告)号：US20050227457A1

公开(公告)日：2005-10-13

申请号：US10101859

申请日：2002-03-21

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

IPC分类号： H01L31/04 ,  C30B1/00 ,  C30B25/10 ,  C30B29/06 ,  H01L21/20 ,  H01L21/205 ,  H01L21/36 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/202 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiFα (440 nm) is not smaller than a luminous intensity attributed to Hα (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.

摘要翻译： 根据本发明的形成硅基薄膜的方法包括将含有氟化硅和氢的源气体引入真空容器中，并且使用高频等离子体CVD方法在引入的基底上形成硅基薄膜 进入真空容器，其中归因于SiFalpha（440nm）的发光强度不小于归因于Halpha（656nm）的发光强度，从而与常规光源元件相比，以低成本提供具有优异性能的光电元件， 在进一步提高的成膜速度下在短的工艺循环时间内形成具有优异特性的硅基薄膜的方法，通过该方法形成的硅基薄膜和包含硅基薄膜的光电元件 具有优异的特性，附着力和耐环境性。

公开(公告)号：US06794275B2

公开(公告)日：2004-09-21

申请号：US10113675

申请日：2002-04-02

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Yuzo Koda ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Koichiro Moriyama

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Yuzo Koda ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Koichiro Moriyama

IPC分类号： H01L21365

CPC分类号： H01L31/1804 ,  C23C16/46 ,  C23C16/463 ,  C23C16/505 ,  C23C16/52 ,  C23C16/545 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66765 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In a process for forming a silicon-based film on a substrate according to the present invention, the substrate has a temperature gradient in the thickness direction thereof in the formation of the silicon-based film and the temperature gradient is made such that a deposition surface of the substrate has a higher temperature than a backside or the direction of the temperature gradient is reversed. With this configuration, the present invention provides a silicon-based thin film having good properties at a high deposition rate and provides a semiconductor device including it. The present invention also provides a semiconductor device including the silicon-based thin films that has good adhesion and weather-resisting properties and that can be manufactured in a short tact time.

摘要翻译： 在根据本发明的基板上形成硅基膜的方法中，在形成硅基膜时，基板在其厚度方向上具有温度梯度，并使温度梯度使得沉积表面 的衬底具有比背面更高的温度或温度梯度的方向反转。 利用这种结构，本发明提供一种在高沉积速率下具有良好性能的硅基薄膜，并提供包括它的半导体器件。 本发明还提供一种半导体器件，其包括硅基薄膜，其具有良好的粘合性和耐候性，并且可以在短的时间内制造。

公开(公告)号：US06858308B2

公开(公告)日：2005-02-22

申请号：US10092617

申请日：2002-03-08

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Ryo Hayashi ,  Shuichiro Sugiyama

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Ryo Hayashi ,  Shuichiro Sugiyama

IPC分类号： B32B9/00 ,  H01L21/00 ,  H01L21/336 ,  H01L29/04 ,  H01L29/786 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L29/66765 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78678 ,  H01L29/78696 ,  H01L31/03685 ,  H01L31/075 ,  H01L31/182 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521 ,  Y10T428/261

摘要： The invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal. The microcrystal is located in at least one interface region of the silicon-based film containing the microcrystal and has no orientation property. Further, the invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal, and the orientation property of the microcrystal changing in a film thickness direction of the silicon-based film containing the microcrystal. Thereby, a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film having excellent adhesion and environmental resistance can be obtained.

摘要翻译： 本发明提供了一种半导体元件，其具有由硅基膜构成的半导体结，至少一个含有微晶的硅基膜。 微晶体位于含有微结晶的硅基膜的至少一个界面区域中，并且不具有取向性。 此外，本发明提供一种半导体元件，其具有由硅系膜构成的半导体结，含有微晶的硅系膜中的至少一种以及微晶在硅基膜的膜厚方向上的取向性 含有微晶的薄膜。 由此，可以获得具有缩短的生产时间缩短，成膜速度和优异特性的硅基膜，以及包含这种具有优异的粘附性和耐环境性的硅基膜的半导体元件。

公开(公告)号：US20120202310A1

公开(公告)日：2012-08-09

申请号：US13365055

申请日：2012-02-02

申请人： Tadashi Sawayama ,  Hiroshi Ikakura ,  Takaharu Kondo ,  Toru Eto

发明人： Tadashi Sawayama ,  Hiroshi Ikakura ,  Takaharu Kondo ,  Toru Eto

IPC分类号： H01L31/18 ,  H01L31/0232

CPC分类号： H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14685

摘要： A method for manufacturing a solid-state image pickup device that includes a substrate including a photoelectric conversion unit and a waveguide arranged on the substrate, the waveguide corresponding to the photoelectric conversion unit and including a core and a cladding, includes a first step and a second step, in which in the first step and the second step, a member to be formed into the core is formed in an opening in the cladding by high-density plasma-enhanced chemical vapor deposition, and in which after the first step, in the second step, the member to be formed into the core is formed by the high-density plasma-enhanced chemical vapor deposition under conditions in which the ratio of a radio-frequency power on the back face side of the substrate to a radio-frequency power on the front face side of the substrate is higher than that in the first step.

摘要翻译： 一种固体摄像装置的制造方法，其特征在于，包括具备配置在所述基板上的光电转换部和波导管的基板，与所述光电转换部对应的包含芯和包层的波导包括第一工序和 第二步骤，其中在第一步骤和第二步骤中，通过高密度等离子体增强化学气相沉积在形成在芯体中的开口中形成芯体的构件，其中在第一步骤之后， 在第二步骤中，通过高密度等离子体增强化学气相沉积在基板的背面侧的射频功率与射频之间的比例 基板的正面侧的电力高于第一工序。

公开(公告)号：US07282132B2

公开(公告)日：2007-10-16

申请号：US10805323

申请日：2004-03-22

申请人： Masumitsu Iwata ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Takaharu Kondo ,  Satoru Yamada ,  Yusuke Miyamoto

发明人： Masumitsu Iwata ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Takaharu Kondo ,  Satoru Yamada ,  Yusuke Miyamoto

IPC分类号： C25D5/50

CPC分类号： H01L31/1884 ,  C25D9/04 ,  H01L31/056 ,  H01L31/1864 ,  Y02E10/52 ,  Y02P70/521

摘要： A film of zinc oxide electrochemically deposited from an aqueous solution is subjected to heat treatment at a temperature equal to or higher than 150° C. and equal to or lower than 400° C. in a nitrogen or inert gas atmosphere that contains oxygen, thereby obtaining a zinc oxide film that is low in electric resistance without impairing the light transmittance of the zinc oxide film.

摘要翻译： 在含有氧的氮气或惰性气体气氛中，将从水溶液电化学沉积的氧化锌薄膜在等于或高于150℃等于或低于400℃的温度下进行热处理，由此 获得电阻低而不损害氧化锌膜的透光率的氧化锌膜。

公开(公告)号：US20050034665A1

公开(公告)日：2005-02-17

申请号：US10948342

申请日：2004-09-24

申请人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： C23C16/24 ,  C23C16/509 ,  C23C16/54 ,  C30B25/10 ,  H01L21/205 ,  H01L31/0376 ,  H01L31/04 ,  H01L31/18 ,  C23C16/00

CPC分类号： C23C16/24 ,  C23C16/5096 ,  C23C16/545 ,  C30B25/105 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0376 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

摘要翻译： 通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件 在基底和地球之间。 所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

公开(公告)号：US06803080B2

公开(公告)日：2004-10-12

申请号：US10231308

申请日：2002-08-30

申请人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： H05H102

CPC分类号： C23C16/24 ,  C23C16/5096 ,  C23C16/545 ,  C30B25/105 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0376 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

摘要翻译： 通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件 在基底和地球之间。 所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

公开(公告)号：US06737123B2

公开(公告)日：2004-05-18

申请号：US10166759

申请日：2002-06-12

申请人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Tadashi Sawayama ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Hiroyuki Ozaki ,  Yoshinori Sugiura

发明人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Tadashi Sawayama ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Hiroyuki Ozaki ,  Yoshinori Sugiura

IPC分类号： C23C16505

CPC分类号： C23C16/517 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|≦|V1|≦50×|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.

摘要翻译： 形成在高频电力上叠加直流电位的硅基膜，将高频供电部的电位设定为比地电位低V1的电位; 满足| V2 | <= | V1 | <= 50x | V2 |的V1，其中V2是在等离子体在相同条件下发生的状态下在电极中产生的与地电位的电位差， 电流电势不叠加在高频电源上，并且电极进入非接地状态。 这可以提供具有高成膜速度的优异特性的硅基膜和使用该硅基膜的半导体器件，具有优异的附着力，耐环境性，并且可以在制造时享受短的时间 。

公开(公告)号：US06656464B2

公开(公告)日：2003-12-02

申请号：US09216857

申请日：1998-12-21

申请人： Takaharu Kondo

发明人： Takaharu Kondo

IPC分类号： A61K3846

CPC分类号： A61K38/465 ,  A61K45/06 ,  A61K2300/00

摘要： Compositions having an effect of promoting gastric emptying. These compositions comprise a lipase which was found to have an effect of promoting gastric emptying together with lipase activity-free ingredient(s) acting on the digestive tracts such as a prokinetic, a histamine H2 receptor antagonist, a proton pump inhibitor and/or a stomachic ingredient. They are efficaciously employed as medicaments for ameliorating or treating chronic gastrointestinal symptoms such as sinking feelings, heartburn and heaviness in the stomach, i.e., complaints about the digestive tracts.

摘要翻译： 具有促进胃排空作用的组合物。 这些组合物包含脂肪酶，其被发现具有促进胃排空的作用以及作用于消化道例如促动力，组胺H2受体拮抗剂，质子泵抑制剂和/或 胃部成分 它们有效地用作改善或治疗慢性胃肠道症状的药物，例如下沉的感觉，胃灼热和胃中的沉重，即关于消化道的投诉。