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    Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element
    1.
    发明授权
    Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element 失效
    形成硅基薄膜，硅基薄膜和光电元件的方法

    公开(公告)号：US07074641B2

    公开(公告)日：2006-07-11

    申请号：US10101859

    申请日：2002-03-21

    申请人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

    发明人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

    IPC分类号： H01L21/20

    CPC分类号： H01L31/202 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

    摘要： A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiFα (440 nm) is not smaller than a luminous intensity attributed to Hα (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.

    摘要翻译： 根据本发明的形成硅基薄膜的方法包括将含有氟化硅和氢的源气体引入真空容器中，并且使用高频等离子体CVD方法在引入的基底上形成硅基薄膜 进入真空容器，其中归因于SiFalpha（440nm）的发光强度不小于归因于Halpha（656nm）的发光强度，从而与常规光源元件相比，以低成本提供具有优异性能的光电元件， 在进一步提高的成膜速度下在短的工艺循环时间内形成具有优异特性的硅基薄膜的方法，通过该方法形成的硅基薄膜和包含硅基薄膜的光电元件 具有优异的特性，附着力和耐环境性。

    Process for manufacturing semiconductor element using non-monocrystalline semiconductor layers of first and second conductivity types and amorphous and microcrystalline I-type semiconductor layers
    7.
    发明授权
    Process for manufacturing semiconductor element using non-monocrystalline semiconductor layers of first and second conductivity types and amorphous and microcrystalline I-type semiconductor layers 失效

    公开(公告)号：US06271055B1

    公开(公告)日：2001-08-07

    申请号：US09038708

    申请日：1998-03-09

    申请人： Takahiro Yajima ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

    发明人： Takahiro Yajima ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

    IPC分类号： H01L2100

    CPC分类号： H01L31/202 ,  H01L31/1055 ,  Y02E10/50 ,  Y02P70/521

    摘要： A process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor while decreasing the film forming rate thereof and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor. Further, a process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor while increasing the film forming rate thereof. Thereby, a photoelectric conversion element having a high photoelectric conversion efficiency can be obtained with a high productivity.

    Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element
    8.
    发明授权
    Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element 失效
    用于形成半导体薄膜的方法和装置，以及用于形成光伏元件的方法和装置

    公开(公告)号：US6159763A

    公开(公告)日：2000-12-12

    申请号：US927413

    申请日：1997-09-10

    申请人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

    发明人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

    IPC分类号： C23C16/509 ,  H01L21/205 ,  H01L31/075 ,  H01L31/20 ,  H01L31/18

    CPC分类号： H01L31/076 ,  C23C16/5096 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

    摘要： There is provided a method of forming a photovoltaic element, in which a p-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure, in which in a plasma discharge space, the surface area of a cathod electrode in a plasma discharge space is larger than the sum of surface areas of a belt-like member and an anode electrode, a potential of said cathod electrode at the time of excitation of glow discharge is positive relative to the belt-like member and the anode electrode, and a separator electrode partially constituting the cathod electrode is configured to have a form of a fin or a block, and an n-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure of a capacitive-coupling, parallel-plate type. Thereby, a photovoltaic element having a high quality and superior uniformity over a large area, less defects, superior photo deterioration property and improved series resistance can be manufactured providing a high throughput in large quantities with good reproducibility.

    摘要翻译： 提供一种形成光电元件的方法，其中在用于形成具有阴极电极结构的半导体薄膜的器件中形成p型半导体层，其中在等离子体放电空间中，阴极的表面积 等离子体放电空间中的电极大于带状部件和阳极电极的表面积的总和，所述阴极电极在辉光放电的激发时的电位相对于带状部件是正的， 阳极电极和部分地构成阴极电极的隔离电极构成为具有翅片或块的形式，并且在用于形成具有阴极电极结构的半导体薄膜的器件中形成n型半导体层 电容耦合，平行板型。 由此，可以制造出具有高质量且均匀性大的光电元件，较少的缺陷，优异的光劣化性能和改善的串联电阻，从而提供大量的高生产率和良好的再现性。

    Deposition apparatus for manufacturing thin film
    9.
    发明授权
    Deposition apparatus for manufacturing thin film 有权
    用于制造薄膜的沉积装置

    公开(公告)号：US06530341B1

    公开(公告)日：2003-03-11

    申请号：US09257027

    申请日：1999-02-25

    申请人： Yuzo Kohda ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

    发明人： Yuzo Kohda ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

    IPC分类号： H05H100

    CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/32541 ,  H01J37/3277 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

    摘要： A deposition apparatus of the present invention is arranged so that a surface area of a radio-frequency power applying cathode electrode disposed in a glow discharge space, in a space in contact with discharge is greater than a surface area of the whole of a ground electrode (anode electrode) including a beltlike member in the discharge space. This structure can maintain the potential (self-bias) of the cathode electrode disposed in the glow discharge space automatically at a positive potential with respect to the ground (anode) electrode including the beltlike member. As a result, the bias is applied in the direction of irradiation of ions with positive charge to a deposit film on the beltlike member, so that the ions existing in the plasma discharge are accelerated more efficiently toward the beltlike member, thereby effectively giving energy to the surface of deposit film by ion bombardment. Accordingly, since the structural relaxation of film is promoted even at relatively high deposition rates, a microcrystal semiconductor film can be formed at the relatively high deposition rates with good efficiency, with high uniformity, and with good reproducibility.

    摘要翻译： 本发明的沉积装置被布置成使得设置在辉光放电空间中的与放电接触的空间中的射频施加电极的表面积大于接地电极整体的表面积 （阳极电极），其在放电空间中包括带状构件。该结构可以将设置在辉光放电空间中的阴极的电位（自偏压）自动保持在相对于包括 结果，将带正电荷的离子的照射方向施加到带状构件上的沉积膜上，使得存在于等离子体放电中的离子更有效地朝向带状构件加速，从而有效地 通过离子轰击给沉积膜表面赋予能量。 因此，即使在相对高的沉积速率下也能促进膜的结构弛豫，可以以较高的沉积速率以高的均匀性和高的再现性形成微晶半导体膜。