公开(公告)号：US06803080B2

公开(公告)日：2004-10-12

申请号：US10231308

申请日：2002-08-30

申请人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： H05H102

CPC分类号： C23C16/24 ,  C23C16/5096 ,  C23C16/545 ,  C30B25/105 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0376 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

摘要翻译： 通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件 在基底和地球之间。 所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

公开(公告)号：US06737123B2

公开(公告)日：2004-05-18

申请号：US10166759

申请日：2002-06-12

申请人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Tadashi Sawayama ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Hiroyuki Ozaki ,  Yoshinori Sugiura

发明人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Tadashi Sawayama ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Hiroyuki Ozaki ,  Yoshinori Sugiura

IPC分类号： C23C16505

CPC分类号： C23C16/517 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|≦|V1|≦50×|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.

摘要翻译： 形成在高频电力上叠加直流电位的硅基膜，将高频供电部的电位设定为比地电位低V1的电位; 满足| V2 | <= | V1 | <= 50x | V2 |的V1，其中V2是在等离子体在相同条件下发生的状态下在电极中产生的与地电位的电位差， 电流电势不叠加在高频电源上，并且电极进入非接地状态。 这可以提供具有高成膜速度的优异特性的硅基膜和使用该硅基膜的半导体器件，具有优异的附着力，耐环境性，并且可以在制造时享受短的时间 。

公开(公告)号：US06656464B2

公开(公告)日：2003-12-02

申请号：US09216857

申请日：1998-12-21

申请人： Takaharu Kondo

发明人： Takaharu Kondo

IPC分类号： A61K3846

CPC分类号： A61K38/465 ,  A61K45/06 ,  A61K2300/00

摘要： Compositions having an effect of promoting gastric emptying. These compositions comprise a lipase which was found to have an effect of promoting gastric emptying together with lipase activity-free ingredient(s) acting on the digestive tracts such as a prokinetic, a histamine H2 receptor antagonist, a proton pump inhibitor and/or a stomachic ingredient. They are efficaciously employed as medicaments for ameliorating or treating chronic gastrointestinal symptoms such as sinking feelings, heartburn and heaviness in the stomach, i.e., complaints about the digestive tracts.

摘要翻译： 具有促进胃排空作用的组合物。 这些组合物包含脂肪酶，其被发现具有促进胃排空的作用以及作用于消化道例如促动力，组胺H2受体拮抗剂，质子泵抑制剂和/或 胃部成分 它们有效地用作改善或治疗慢性胃肠道症状的药物，例如下沉的感觉，胃灼热和胃中的沉重，即关于消化道的投诉。

公开(公告)号：US06515219B2

公开(公告)日：2003-02-04

申请号：US09826936

申请日：2001-04-06

申请人： Takaharu Kondo

发明人： Takaharu Kondo

IPC分类号： H01L3104

CPC分类号： H01L31/0236 ,  H01L31/022483 ,  Y02E10/50 ,  Y10T428/24 ,  Y10T428/24926

摘要： Provided are a zinc oxide thin film having an X-ray diffraction peak of the plane of zinc oxide crystal, a photoelectric conversion element having the zinc oxide thin film, and production processes thereof. By these, the texture level of the zinc oxide thin film is increased and the photoelectric conversion element is provided with excellent short circuit current density (Jsc).

摘要翻译： 提供了具有氧化锌晶体的平面的X射线衍射峰的氧化锌薄膜，具有氧化锌薄膜的光电转换元件及其制造方法。 通过这些，氧化锌薄膜的纹理水平增加，光电转换元件具有优异的短路电流密度（Jsc）。

公开(公告)号：US06472248B2

公开(公告)日：2002-10-29

申请号：US09758345

申请日：2001-01-12

申请人： Atsushi Shiozaki ,  Masafumi Sano ,  Toshimitsu Kariya ,  Takaharu Kondo ,  Makoto Higashikawa ,  Koichi Matsuda

发明人： Atsushi Shiozaki ,  Masafumi Sano ,  Toshimitsu Kariya ,  Takaharu Kondo ,  Makoto Higashikawa ,  Koichi Matsuda

IPC分类号： H01L2100

CPC分类号： H01L31/03685 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02675 ,  H01L31/028 ,  H01L31/03926 ,  H01L31/048 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.

摘要翻译： 一种具有叠层结构的光电元件，包括不含结晶相的第一半导体层，含有近似球形微晶相的第二半导体层，以及包含柱状微晶相的第三半导体层，该第三半导体层依次层叠，其中所述 所述第三半导体层侧的第二半导体层的平均尺寸大于所述第二半导体层在所述第一半导体层一侧的所述球形微晶相的平均尺寸。

公开(公告)号：US06242080B1

公开(公告)日：2001-06-05

申请号：US09110142

申请日：1998-07-06

申请人： Takaharu Kondo

发明人： Takaharu Kondo

IPC分类号： B32B3300

CPC分类号： H01L31/0236 ,  H01L31/022483 ,  Y02E10/50 ,  Y10T428/24 ,  Y10T428/24926

摘要： Provided are a zinc oxide thin film having an X-ray diffraction peak of the (103) plane of zinc oxide crystal, a photoelectric conversion element having the zinc oxide thin film, and production processes thereof. By these, the texture level of the zinc oxide thin film is increased and the photoelectric conversion element is provided with excellent short circuit current density (Jsc).

摘要翻译： 提供具有氧化锌晶体的（103）面的X射线衍射峰，具有氧化锌薄膜的光电转换元件的氧化锌薄膜及其制造方法。 通过这些，氧化锌薄膜的纹理水平增加，光电转换元件具有优异的短路电流密度（Jsc）。

公开(公告)号：US07445952B2

公开(公告)日：2008-11-04

申请号：US11197512

申请日：2005-08-05

申请人： Takaharu Kondo ,  Hideo Tamura ,  Atsushi Yasuno ,  Noboru Toyama ,  Yuichi Sonoda ,  Masumitsu Iwata ,  Akiya Nakayama ,  Yusuke Miyamoto

发明人： Takaharu Kondo ,  Hideo Tamura ,  Atsushi Yasuno ,  Noboru Toyama ,  Yuichi Sonoda ,  Masumitsu Iwata ,  Akiya Nakayama ,  Yusuke Miyamoto

IPC分类号： H01L21/00 ,  H01L31/18 ,  B05D5/12

CPC分类号： H01L31/02168 ,  H01L31/056 ,  Y02E10/52

摘要： A method of forming a laminate and a method of manufacturing a photovoltaic device using the laminate are provided. The laminate forming method includes a first step of forming an intermediate layer on a base member, and a second step of forming a metal layer on the intermediate layer, the adhesion of the metal layer to the base member being lower than that of the intermediate layer, the reflectance of the metal layer being higher than that of the intermediate layer. The rate of formation of the metal layer is increased at an intermediate stage in the second step. The laminate thereby formed has improved characteristics and is capable of maintaining improved reflection characteristics and adhesion even under high-temperature and high-humidity conditions or during long-term use.

摘要翻译： 提供一种形成层压体的方法和使用该层压体制造光伏器件的方法。 层压体形成方法包括在基材上形成中间层的第一工序和在中间层上形成金属层的第二工序，金属层与基材的密合性比中间层低 ，金属层的反射率高于中间层的反射率。 在第二步骤的中间阶段，金属层的形成速率增加。 由此形成的层压件具有改进的特性，并且即使在高温和高湿度条件下或在长期使用中也能够保持改进的反射特性和粘附性。

公开(公告)号：US07074641B2

公开(公告)日：2006-07-11

申请号：US10101859

申请日：2002-03-21

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

IPC分类号： H01L21/20

CPC分类号： H01L31/202 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiFα (440 nm) is not smaller than a luminous intensity attributed to Hα (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.

摘要翻译： 根据本发明的形成硅基薄膜的方法包括将含有氟化硅和氢的源气体引入真空容器中，并且使用高频等离子体CVD方法在引入的基底上形成硅基薄膜 进入真空容器，其中归因于SiFalpha（440nm）的发光强度不小于归因于Halpha（656nm）的发光强度，从而与常规光源元件相比，以低成本提供具有优异性能的光电元件， 在进一步提高的成膜速度下在短的工艺循环时间内形成具有优异特性的硅基薄膜的方法，通过该方法形成的硅基薄膜和包含硅基薄膜的光电元件 具有优异的特性，附着力和耐环境性。

公开(公告)号：US20050227457A1

公开(公告)日：2005-10-13

申请号：US10101859

申请日：2002-03-21

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Koichiro Moriyama ,  Takahiro Yajima ,  Takeshi Shishido

IPC分类号： H01L31/04 ,  C30B1/00 ,  C30B25/10 ,  C30B29/06 ,  H01L21/20 ,  H01L21/205 ,  H01L21/36 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/202 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiFα (440 nm) is not smaller than a luminous intensity attributed to Hα (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.

摘要翻译： 根据本发明的形成硅基薄膜的方法包括将含有氟化硅和氢的源气体引入真空容器中，并且使用高频等离子体CVD方法在引入的基底上形成硅基薄膜 进入真空容器，其中归因于SiFalpha（440nm）的发光强度不小于归因于Halpha（656nm）的发光强度，从而与常规光源元件相比，以低成本提供具有优异性能的光电元件， 在进一步提高的成膜速度下在短的工艺循环时间内形成具有优异特性的硅基薄膜的方法，通过该方法形成的硅基薄膜和包含硅基薄膜的光电元件 具有优异的特性，附着力和耐环境性。

公开(公告)号：US06897559B2

公开(公告)日：2005-05-24

申请号：US10455300

申请日：2003-06-06

申请人： Takaharu Kondo ,  Akira Sakai ,  Koichi Matsuda

发明人： Takaharu Kondo ,  Akira Sakai ,  Koichi Matsuda

IPC分类号： C23C16/509 ,  H01L21/205 ,  H01L31/04 ,  H01L31/20 ,  H01L23/34

CPC分类号： H01L31/206 ,  C23C16/509 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  H01L2924/0002 ,  Y02E10/50 ,  Y02P70/521 ,  H01L2924/00

摘要： There is provided an apparatus for forming a plurality of silicon-based thin films on a substrate using a plurality of deposited film forming vessels that can form silicon-based thin films of higher quality and excellent uniformity by applying a high frequency power of a first frequency selected from the range between 30 MHz and 500 MHz to a power-applying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 10 mm±5 mm, and by supplying a high frequency power of a second frequency selected from the range between 10 MHz and 30 MHz to a power-supplying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 20 mm±5 mm.

摘要翻译： 提供了一种使用多个沉积膜形成容器在基板上形成多个硅基薄膜的装置，该沉积膜形成容器可以通过施加第一频率的高频功率而形成更高质量和优异的均匀性的硅基薄膜 从在30MHz和500MHz之间的范围内选择到沉积成膜容器中的功率施加电极，其中供电电极和衬底之间的距离为10mm±5mm，并且通过提供高频功率的 从10MHz到30MHz范围内的第二频率到沉积成膜容器中的供电电极，其中供电电极和基板之间的距离为20mm±5mm。