发明申请
US20050230763A1 Method of manufacturing a microelectronic device with electrode perturbing sill
审中-公开
用电极扰动门槛制造微电子器件的方法
- 专利标题： Method of manufacturing a microelectronic device with electrode perturbing sill
- 专利标题（中）： 用电极扰动门槛制造微电子器件的方法
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申请号： US10824854申请日： 2004-04-15
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公开(公告)号： US20050230763A1公开(公告)日： 2005-10-20
- 发明人: Chien-Chao Huang , Cheng-Kuo Wen , Fu-Liang Yang
- 申请人： Chien-Chao Huang , Cheng-Kuo Wen , Fu-Liang Yang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L29/76 ; H01L29/78
摘要：
A method of manufacturing a microelectronic device. The method includes providing a substrate and forming a patterned feature located over the substrate and a plurality of doped regions. The patterned feature also comprises at least one electrode, wherein the electrode is proximate a plurality of doped layers. The method further includes forming a sill located within the electrode, wherein the sill comprising at least one impurity and adapted for modifying an electrical property of at least one member adjacent the electrode.
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