发明申请
US20050236626A1 Semiconductor device, producing method of semiconductor substrate, and producing method of semiconductor device
审中-公开
半导体装置，半导体基板的制造方法以及半导体装置的制造方法
- 专利标题： Semiconductor device, producing method of semiconductor substrate, and producing method of semiconductor device
- 专利标题（中）： 半导体装置，半导体基板的制造方法以及半导体装置的制造方法
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申请号： US11088252申请日： 2005-03-24
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公开(公告)号： US20050236626A1公开(公告)日： 2005-10-27
- 发明人: Yutaka Takafuji , Takashi Itoga , Steven Droes , Masao Moriguchi
- 申请人： Yutaka Takafuji , Takashi Itoga , Steven Droes , Masao Moriguchi
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 优先权： JP2004-087914 20040324
- 主分类号： G02F1/1368
- IPC分类号： G02F1/1368 ; H01L21/00 ; H01L21/02 ; H01L21/265 ; H01L21/336 ; H01L21/58 ; H01L21/60 ; H01L21/68 ; H01L21/77 ; H01L21/8234 ; H01L27/08 ; H01L27/088 ; H01L27/12 ; H01L27/32 ; H01L29/04 ; H01L29/423 ; H01L29/49 ; H01L29/786 ; H01L51/56
摘要：
In a semiconductor device including an insulative substrate and a thin film device formed thereon, a thin film transistor having a non-single crystalline silicon thin film and a transistor having a single crystalline silicon thin film are intermixed, and a gate electrode film of the thin film transistor having single crystalline silicon is made of a material including a metal whose mass number is larger than that of silicon or a compound containing the metal.
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