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    Cleaved silicon substrate active device
    3.
    发明申请
    Cleaved silicon substrate active device 有权
    切割硅衬底有源器件

    公开(公告)号：US20070066035A1

    公开(公告)日：2007-03-22

    申请号：US11600699

    申请日：2006-11-16

    申请人： Steven Droes ,  Yutaka Takafuji

    发明人： Steven Droes ,  Yutaka Takafuji

    IPC分类号： H01L21/322

    CPC分类号： H01L21/3221 ,  H01L21/26506 ,  H01L21/76254 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78603

    摘要： A hydrogen (H) exfoliation gettering method is provided for attaching fabricated circuits to receiver substrates. The method comprises: providing a Si substrate; forming a Si active layer overlying the substrate with circuit source/drain (S/D) regions; implanting a p-dopant into the S/D regions; forming gettering regions underling the S/D regions; implanting H in the Si substrate, forming a cleaving plane (peak concentration (Rp) H layer) in the Si substrate about as deep as the gettering regions; bonding the circuit to a receiver substrate; cleaving the Si substrate along the cleaving plane; and binding the implanted H underlying the S/D regions with p-dopant in the gettering regions, as a result of post-bond annealing.

    摘要翻译： 提供氢（H）剥离吸气方法，用于将制造的电路连接到接收器基板。 该方法包括：提供Si衬底; 在电路源极/漏极（S / D）区域上形成覆盖衬底的Si有源层; 将P掺杂剂注入到S / D区域中; 形成S / D区域下游的吸气区域; 在Si衬底中注入H，在Si衬底中形成与吸杂区一样深的切割面（峰值浓度（Rp）H层）; 将电路接合到接收器基板; 沿着切割面切割Si衬底; 并且作为后键合退火的结果，在吸杂区域中将S / D区域下面的注入的H与p掺杂剂结合。

    System and method for hydrogen exfoliation gettering
    5.
    发明申请
    System and method for hydrogen exfoliation gettering 失效
    氢剥离吸气系统和方法

    公开(公告)号：US20060073678A1

    公开(公告)日：2006-04-06

    申请号：US10991120

    申请日：2004-11-16

    申请人： Steven Droes ,  Yutaka Takafuji

    发明人： Steven Droes ,  Yutaka Takafuji

    IPC分类号： H01L21/322

    CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

    摘要： A hydrogen (H) exfoliation gettering method is provided for attaching fabricated circuits to receiver substrates. The method comprises: providing a Si substrate; forming a Si active layer overlying the substrate with circuit source/drain (S/D) regions; implanting a p-dopant into the S/D regions; forming gettering regions underling the S/D regions; implanting H in the Si substrate, forming a cleaving plane (peak concentration (Rp) H layer) in the Si substrate about as deep as the gettering regions; bonding the circuit to a receiver substrate; cleaving the Si substrate along the cleaving plane; and binding the implanted H underlying the S/D regions with p-dopant in the gettering regions, as a result of post-bond annealing.

    摘要翻译： 提供氢（H）剥离吸气方法，用于将制造的电路连接到接收器基板。 该方法包括：提供Si衬底; 在电路源极/漏极（S / D）区域上形成覆盖衬底的Si有源层; 将P掺杂剂注入到S / D区域中; 形成S / D区域下游的吸气区域; 在Si衬底中注入H，在Si衬底中形成与吸杂区一样深的切割面（峰值浓度（Rp）H层）; 将电路接合到接收器基板; 沿着切割面切割Si衬底; 并且作为后键合退火的结果，在吸杂区域中将S / D区域下面的注入的H与p掺杂剂结合。

    Method for fabricating semiconductor device and semiconductor device with separation along peeling layer
    6.
    发明授权
    Method for fabricating semiconductor device and semiconductor device with separation along peeling layer 有权
    半导体器件制造方法和沿着剥离层分离的半导体器件

    公开(公告)号：US08017492B2

    公开(公告)日：2011-09-13

    申请号：US12222598

    申请日：2008-08-12

    申请人： Yasumori Fukushima ,  Masao Moriguchi ,  Yutaka Takafuji

    发明人： Yasumori Fukushima ,  Masao Moriguchi ,  Yutaka Takafuji

    IPC分类号： H01L21/76

    CPC分类号： H01L21/84 ,  H01L21/32 ,  H01L21/76254 ,  H01L27/1203 ,  H01L29/78654

    摘要： A method for fabricating a semiconductor device according to the present invention is a method for fabricating a semiconductor device including a substrate layer including a plurality of first regions each having an active region and a plurality of second regions each being provided between adjacent ones of the first region. The fabrication method includes an isolation insulation film formation step of forming an isolation insulation film in each of the second regions so that a surface of the isolation insulation film becomes at the same height as that of a surface of a gate oxide film covering the active region, a peeling layer formation step of forming a peeling layer by ion-implanting hydrogen into the substrate layer after the isolation insulation film formation step, and a separation step of separating part of the substrate layer along the peeling layer.

    摘要翻译： 根据本发明的制造半导体器件的方法是一种半导体器件的制造方法，该半导体器件包括：衬底层，该衬底层包括多个第一区域，每个第一区域具有有源区域和多个第二区域， 地区。 制造方法包括隔离绝缘膜形成步骤，在每个第二区域中形成隔离绝缘膜，使得隔离绝缘膜的表面变得与覆盖有源区域的栅极氧化物膜的表面相同的高度 剥离层形成步骤，在隔离绝缘膜形成步骤之后，通过将氢离子注入到衬底层中形成剥离层，以及分离步骤，用于沿剥离层分离衬底层的一部分。

    Production method of semiconductor device and semiconductor device
    7.
    发明授权
    Production method of semiconductor device and semiconductor device 有权
    半导体器件和半导体器件的制造方法

    公开(公告)号：US07897443B2

    公开(公告)日：2011-03-01

    申请号：US11883483

    申请日：2006-01-17

    申请人： Masao Moriguchi ,  Yutaka Takafuji ,  Steven Roy Droes

    发明人： Masao Moriguchi ,  Yutaka Takafuji ,  Steven Roy Droes

    IPC分类号： H01L21/762

    CPC分类号： H01L27/1266 ,  H01L21/76243 ,  H01L21/76256 ,  H01L27/1214 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/7833

    摘要： The present invention provides a production method of a semiconductor device, which can improve characteristics of a semiconductor element including a single crystal semiconductor layer formed by transferring on an insulating substrate. The present invention is a production method of a semiconductor device comprising a single crystal semiconductor layer formed on an insulating substrate, the production method comprising the steps of: implanting a substance for separation into a single crystal semiconductor substrate, thereby forming a separation layer; transferring a part of the single crystal semiconductor substrate, separated at the separation layer, onto the insulating substrate, thereby forming the single crystal semiconductor layer; forming a hydrogen-containing layer on at least one side of the single crystal semiconductor layer; and diffusing hydrogen from the hydrogen-containing layer to the single crystal semiconductor layer.

    摘要翻译： 本发明提供一种半导体器件的制造方法，其能够提高包含通过在绝缘基板上转印而形成的单晶半导体层的半导体元件的特性。 本发明是一种半导体器件的制造方法，其包括在绝缘基板上形成的单晶半导体层，其制造方法包括以下步骤：将分离用物质注入单晶半导体基板，形成分离层; 将在分离层分离的单晶半导体衬底的一部分转印到绝缘衬底上，从而形成单晶半导体层; 在所述单晶半导体层的至少一侧上形成含氢层; 并将氢从含氢层扩散到单晶半导体层。

    Semiconductor Device Fabrication Method And Semiconductor Device
    8.
    发明申请
    Semiconductor Device Fabrication Method And Semiconductor Device 有权
    半导体器件制造方法和半导体器件

    公开(公告)号：US20080128807A1

    公开(公告)日：2008-06-05

    申请号：US11792487

    申请日：2005-11-15

    申请人： Yasumori Fukushima ,  Yutaka Takafuji ,  Masao Moriguchi

    发明人： Yasumori Fukushima ,  Yutaka Takafuji ,  Masao Moriguchi

    IPC分类号： H01L27/00 ,  H01L21/00

    CPC分类号： H01L27/1203 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/265 ,  H01L21/31662 ,  H01L21/32 ,  H01L21/76254 ,  H01L21/84 ,  H01L29/7833

    摘要： In fabricating a semiconductor device, an element forming surface formation step of forming a plurality of element forming surfaces of different heights on a semiconductor layer to have different levels, a semiconductor element formation step of forming a plurality of semiconductor elements and, one in each of a corresponding number of regions of the semiconductor layer, each region including an associated one of the plurality of element forming surfaces, a level-difference compensation insulating film formation step of forming a level-difference compensation insulating film on the semiconductor layer to cover the semiconductor elements and have a surface with different levels along the element forming surfaces, a release layer formation step of forming a release layer in the semiconductor layer by ion-implanting a peeling material through the level-difference compensation insulating film into the semiconductor layer, and a separation step of separating part of the semiconductor layer along the release layer are performed.

    摘要翻译： 在制造半导体器件时，在半导体层上形成具有不同高度的多个元件形成表面以形成不同电平的元件形成表面形成步骤，形成多个半导体元件的半导体元件形成步骤和 所述半导体层的相应数量的区域，每个区域包括所述多个元件形成表面中的相关联的一个元件形成表面;电平差补偿绝缘膜形成步骤，在所述半导体层上形成电平差补偿绝缘膜以覆盖所述半导体 元件，并且具有沿着元件形成表面具有不同水平的表面;剥离层形成步骤，通过将剥离材料通过电位差补偿绝缘膜离子注入到半导体层中而在半导体层中形成剥离层，以及 分离半导体层的一部分的分离步骤 沿着释放层进行。

    Semiconductor substrate, semiconductor device, and manufacturing methods for them
    9.
    发明申请
    Semiconductor substrate, semiconductor device, and manufacturing methods for them 有权
    半导体衬底，半导体器件及其制造方法

    公开(公告)号：US20050245046A1

    公开(公告)日：2005-11-03

    申请号：US11086680

    申请日：2005-03-23

    申请人： Yutaka Takafuji ,  Yasumori Fukushima ,  Masao Moriguchi

    发明人： Yutaka Takafuji ,  Yasumori Fukushima ,  Masao Moriguchi

    IPC分类号： G02F1/1368 ,  G02F1/136 ,  G09F9/30 ,  G09G3/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/316 ,  H01L21/336 ,  H01L21/469 ,  H01L21/76 ,  H01L21/762 ,  H01L21/77 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L27/10 ,  H01L27/12 ,  H01L29/00 ,  H01L29/786

    CPC分类号： H01L27/1266 ,  H01L21/76202 ,  H01L21/76254 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/78603 ,  H01L29/78609

    摘要： The present invention provides a semiconductor substrate, which comprises a singlecrystalline Si substrate which includes an active layer having a channel region, a source region, and a drain region, the singlecrystalline Si substrate including at least a part of a device structure not containing a well-structure or a channel stop region; a gate insulating film formed on the singlecrystalline Si substrate; a gate electrode formed on the gate insulating film; a LOCOS oxide film whose thickness is more than a thickness of the gate insulating film, the LOCOS oxide film being formed on the singlecrystalline Si substrate by surrounding the active layer; and an insulating film formed over the gate electrode and the LOCOS oxide film. On this account, on fabricating the semiconductor device having a high-performance integration system by forming the non-singlecrystalline Si semiconductor element and the singlecrystalline Si semiconductor element on the large insulating substrate, the process for making the singlecrystalline Si is simplified. Further, the foregoing arrangement provides a semiconductor substrate and a fabrication method thereof, which ensures device isolation of the minute singlecrystalline Si semiconductor element without highly-accurate photolithography, when the singlecrystalline Si semiconductor element is transferred onto the large insulating substrate.

    摘要翻译： 本发明提供一种半导体衬底，其包括单晶Si衬底，其包括具有沟道区，源极区和漏极区的有源层，所述单晶Si衬底包括至少部分不包含阱的器件结构 结构或通道停止区域; 形成在单晶Si衬底上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; LOCOS氧化物膜的厚度大于栅极绝缘膜的厚度，LOCOS氧化物膜通过围绕有源层而形成在单晶Si衬底上; 以及形成在栅电极和LOCOS氧化物膜上的绝缘膜。 因此，通过在大的绝缘基板上形成非单晶Si半导体元件和单晶Si半导体元件来制造具有高性能的集成系统的半导体器件，简化了制造单晶硅的工艺。 此外，上述结构提供半导体衬底及其制造方法，当将单晶硅半导体元件转印到大绝缘衬底上时，确保了微单晶Si半导体元件的器件隔离而没有高精度光刻。

    SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS FOR THEM
    10.
    发明申请
    SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS FOR THEM 有权
    半导体衬底，半导体器件及其制造方法

    公开(公告)号：US20090191671A1

    公开(公告)日：2009-07-30

    申请号：US12416240

    申请日：2009-04-01

    申请人： Yutaka Takafuji ,  Asumori Fukushima ,  Masao Moriguchi

    发明人： Yutaka Takafuji ,  Asumori Fukushima ,  Masao Moriguchi

    IPC分类号： H01L21/762

    CPC分类号： H01L27/1266 ,  H01L21/76202 ,  H01L21/76254 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/78603 ,  H01L29/78609

    摘要： The present invention provides a semiconductor substrate, which comprises a singlecrystalline Si substrate which includes an active layer having a channel region, a source region, and a drain region, the singlecrystalline Si substrate including at least a part of a device structure not containing a well-structure or a channel stop region; a gate insulating film formed on the singlecrystalline Si substrate; a gate electrode formed on the gate insulating film; a LOCOS oxide film whose thickness is more than a thickness of the gate insulating film, the LOCOS oxide film being formed on the singlecrystalline Si substrate by surrounding the active layer; and an insulating film formed over the gate electrode and the LOCOS oxide film. On this account, on fabricating the semiconductor device having a high-performance integration system by forming the non-singlecrystalline Si semiconductor element and the singlecrystalline Si semiconductor element on the large insulating substrate, the process for making the singlecrystalline Si is simplified. Further, the foregoing arrangement provides a semiconductor substrate and a fabrication method thereof, which ensures device isolation of the minute singlecrystalline Si semiconductor element without highly-accurate photolithography, when the singlecrystalline Si semiconductor element is transferred onto the large insulating substrate.

    摘要翻译： 本发明提供了一种半导体衬底，其包括单晶Si衬底，其包括具有沟道区，源极区和漏极区的有源层，所述单晶Si衬底包括不包含阱的器件结构的至少一部分 结构或通道停止区域; 形成在单晶Si衬底上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; LOCOS氧化物膜的厚度大于栅极绝缘膜的厚度，LOCOS氧化物膜通过围绕有源层而形成在单晶Si衬底上; 以及形成在栅电极和LOCOS氧化物膜上的绝缘膜。 因此，通过在大的绝缘基板上形成非单晶Si半导体元件和单晶Si半导体元件来制造具有高性能的集成系统的半导体器件，简化了制造单晶硅的工艺。 此外，上述结构提供半导体衬底及其制造方法，当将单晶硅半导体元件转印到大绝缘衬底上时，确保了微单晶Si半导体元件的器件隔离而没有高精度光刻。