发明申请
- 专利标题: Semiconductor light-emitting device
- 专利标题(中): 半导体发光装置
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申请号: US10515655申请日: 2003-04-18
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公开(公告)号: US20050247949A1公开(公告)日: 2005-11-10
- 发明人: Masanobu Senda , Mitsuhiro Inoue , Jun Ito , Toshimasa Hayashi , Kazuki Nishijima , Naoki Shibata
- 申请人: Masanobu Senda , Mitsuhiro Inoue , Jun Ito , Toshimasa Hayashi , Kazuki Nishijima , Naoki Shibata
- 申请人地址: JP Nishikasugai-gun
- 专利权人: Toyota Gosei Co., Ltd.
- 当前专利权人: Toyota Gosei Co., Ltd.
- 当前专利权人地址: JP Nishikasugai-gun
- 优先权: JP2002-153043 20020527
- 国际申请: PCT/JP03/05019 WO 20030418
- 主分类号: H01L33/44
- IPC分类号: H01L33/44 ; H01L33/06 ; H01L33/10 ; H01L33/14 ; H01L33/32 ; H01L33/40 ; H01L29/22
摘要:
An insulation film 150 made of SiO2 is formed on a p-layer 106, and a multiple thick film positive electrode 120, which is a metal film formed through metal deposition, is formed on the insulation film 150 and on the p-type layer 106 at the central portion of which has a window and is exposed. The insulation film 150 has a thickness of one fourth multiple of emission wavelength. Thickness of the insulation film 150 is generally determined by multiplying one fourth of intramedium emission wavelength by an odd number. By interference effect, directivity of radiated light along the optical axis direction can be improved.
公开/授权文献
- US07042012B2 Semiconductor light-emitting device 公开/授权日:2006-05-09
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