发明申请
- 专利标题: CVD tantalum compounds for FET gate electrodes
- 专利标题(中): 用于FET栅电极的CVD钽化合物
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申请号: US11180384申请日: 2005-07-13
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公开(公告)号: US20050250318A1公开(公告)日: 2005-11-10
- 发明人: Vijay Narayanan , Fenton McFeely , Keith Milkove , John Yurkas , Matthew Copel , Paul Jamison , Roy Carruthers , Cyril Cabral , Edmund Sikorskii , Elizabeth Duch , Alessandro Callegari , Sufi Zafar , Kazuhito Nakamura
- 申请人: Vijay Narayanan , Fenton McFeely , Keith Milkove , John Yurkas , Matthew Copel , Paul Jamison , Roy Carruthers , Cyril Cabral , Edmund Sikorskii , Elizabeth Duch , Alessandro Callegari , Sufi Zafar , Kazuhito Nakamura
- 主分类号: C23C16/34
- IPC分类号: C23C16/34 ; H01L21/28 ; H01L21/336 ; H01L21/8234 ; H01L21/8238 ; H01L29/10 ; H01L29/49 ; H01L29/772 ; H01L29/78 ; H01L21/3205 ; H01L21/31 ; H01L21/44 ; H01L21/469 ; H01L21/4763
摘要:
Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 mΩcm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO2 containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.