发明申请
- 专利标题： Solid-state imaging device and manufacturing method thereof
- 专利标题（中）： 固态成像装置及其制造方法
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申请号： US11119763申请日： 2005-05-03
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公开(公告)号： US20050253044A1公开(公告)日： 2005-11-17
- 发明人: Toshihiro Kuriyama
- 申请人： Toshihiro Kuriyama
- 优先权： JP2004-140854 20040511
- 主分类号： H01L27/148
- IPC分类号： H01L27/148 ; H01L21/822 ; H01L27/00 ; H01L27/04 ; H01L27/146 ; H04N5/225 ; H04N5/335 ; H04N5/369 ; H04N5/372 ; H04N101/00
摘要：
The present invention aims to provide a solid-state imaging device that enables miniaturization of camera while maintaining the level of electrostatic damage resistance in the solid-state imaging device, and includes: an imaging unit 100 that transfers signal charge generated by performing photoelectric conversion on incident light, converts the signal charge into an electric signal, and outputs the electric signal as an image signal; and a peripheral circuit portion 110 which includes: a signal electrode pad 111; a power supply electrode pad 112; and a protection circuit 113 that has diodes 320 and 330 placed in opposition, and that discharges static electricity entering from the exterior, to the power supply electrode pad 112.
公开/授权文献
- US07760251B2 Solid-state imaging device and manufacturing method thereof 公开/授权日：2010-07-20
信息查询
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