发明申请
US20050255255A1 Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus
有权
用于等离子体化学气相沉积装置的用于在大表面积上产生均匀的高频等离子体的方法和装置
- 专利标题: Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus
- 专利标题(中): 用于等离子体化学气相沉积装置的用于在大表面积上产生均匀的高频等离子体的方法和装置
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申请号: US10494528申请日: 2002-10-29
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公开(公告)号: US20050255255A1公开(公告)日: 2005-11-17
- 发明人: Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
- 申请人: Keisuke Kawamura , Akemi Takano , Hiroshi Mashima , Hiromu Takatuka , Yasuhiro Yamauti , Yoshiaki Takeuchi , Eishiro Sasakawa
- 申请人地址: JP Tokyo 100-8315
- 专利权人: MITSUBISHI HEAVY INDUSTRIES, LTD.
- 当前专利权人: MITSUBISHI HEAVY INDUSTRIES, LTD.
- 当前专利权人地址: JP Tokyo 100-8315
- 国际申请: PCT/JP02/11208 WO 20021029
- 主分类号: C23C16/509
- IPC分类号: C23C16/509 ; H01J37/32 ; H05H1/24 ; C23C16/00
摘要:
This invention relates a plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. The present invention installs a first and a second power supply section on both ends of the discharge electrode installed in plasma chemical vapor deposition apparatus, which are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.
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