公开(公告)号：US07205034B2

公开(公告)日：2007-04-17

申请号：US10494528

申请日：2002-10-29

申请人： Keisuke Kawamura ,  Akemi Takano ,  Hiroshi Mashima ,  Hiromu Takatuka ,  Yasuhiro Yamauti ,  Yoshiaki Takeuchi ,  Eishiro Sasakawa

发明人： Keisuke Kawamura ,  Akemi Takano ,  Hiroshi Mashima ,  Hiromu Takatuka ,  Yasuhiro Yamauti ,  Yoshiaki Takeuchi ,  Eishiro Sasakawa

IPC分类号： H05H1/24

CPC分类号： H01J37/32174 ,  C23C16/509 ,  H01J37/32082

摘要： A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

摘要翻译： 一种等离子体产生装置，其通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。 第一和第二电源部安装在安装在等离子体化学气相沉积装置中的放电电极的两端，并且被提供有交替的周期：第一周期，其中第一和第二电源部分接收高频 相同的频率，以及接收不同的高频波的第二周期。 以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

公开(公告)号：US20050255255A1

公开(公告)日：2005-11-17

申请号：US10494528

申请日：2002-10-29

申请人： Keisuke Kawamura ,  Akemi Takano ,  Hiroshi Mashima ,  Hiromu Takatuka ,  Yasuhiro Yamauti ,  Yoshiaki Takeuchi ,  Eishiro Sasakawa

发明人： Keisuke Kawamura ,  Akemi Takano ,  Hiroshi Mashima ,  Hiromu Takatuka ,  Yasuhiro Yamauti ,  Yoshiaki Takeuchi ,  Eishiro Sasakawa

IPC分类号： C23C16/509 ,  H01J37/32 ,  H05H1/24 ,  C23C16/00

CPC分类号： H01J37/32174 ,  C23C16/509 ,  H01J37/32082

摘要： This invention relates a plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. The present invention installs a first and a second power supply section on both ends of the discharge electrode installed in plasma chemical vapor deposition apparatus, which are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

摘要翻译： 本发明涉及一种等离子体生成装置，其用于通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。 本发明在安装在等离子体化学气相沉积装置中的放电电极的两端安装第一和第二电源部分，该等离子体化学气相沉积装置被提供有交替的周期：第一和第二电源部分接收高频波 相同的频率，以及接收不同的高频波的第二周期。 以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

公开(公告)号：US07319295B2

公开(公告)日：2008-01-15

申请号：US10506544

申请日：2003-03-13

申请人： Hiroshi Mashima ,  Keisuke Kawamura ,  Akemi Takano ,  Yoshiaki Takeuchi ,  Tetsuro Shigemizu ,  Tatsufumi Aoi

发明人： Hiroshi Mashima ,  Keisuke Kawamura ,  Akemi Takano ,  Yoshiaki Takeuchi ,  Tetsuro Shigemizu ,  Tatsufumi Aoi

IPC分类号： H01J7/24

CPC分类号： H01J37/32577 ,  H01J37/32082

摘要： A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.

摘要翻译： 提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。 在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为 位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。 在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。 由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

公开(公告)号：US20050127844A1

公开(公告)日：2005-06-16

申请号：US10506544

申请日：2003-03-13

申请人： Hiroshi Mashima ,  Keisuke Kawamura ,  Akemi Takano ,  Yoshiaki Takeuchi ,  Tetsuro Shigemizu ,  Tatsufumi Aoi

发明人： Hiroshi Mashima ,  Keisuke Kawamura ,  Akemi Takano ,  Yoshiaki Takeuchi ,  Tetsuro Shigemizu ,  Tatsufumi Aoi

IPC分类号： C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01J7/24

CPC分类号： H01J37/32577 ,  H01J37/32082

摘要： A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.

摘要翻译： 提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。 在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为 位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。 在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。 由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

公开(公告)号：US20110092012A1

公开(公告)日：2011-04-21

申请号：US12993252

申请日：2008-10-30

申请人： Hiroshi Mashima ,  Koichi Asakusa ,  Akemi Takano ,  Nobuki Yamashita ,  Yoshiaki Takeuchi

发明人： Hiroshi Mashima ,  Koichi Asakusa ,  Akemi Takano ,  Nobuki Yamashita ,  Yoshiaki Takeuchi

IPC分类号： H01L31/18

CPC分类号： H01L31/075 ,  H01L31/03762 ,  H01L31/0463 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.

摘要翻译： 一种制造光电器件的方法，其中当在i型非晶硅层上提供n型非晶硅层时，可以在不降低沉积速率的情况下实现期望的结晶比。 制造方法包括沉积p型非晶硅层的p层形成步骤，在p型非晶硅层上沉积i型非晶硅层的i层形成步骤和n层形成 在i型非晶硅层上沉积n型非晶硅层的步骤，其中所述n层形成步骤包括在i型非晶硅层上沉积第一n层的第一n层形成步骤， 以及在第一n层上沉积第二n层的第二n层形成步骤，并且用于第一n层形成步骤的沉积条件是产生比第二n层的沉积条件更高的结晶比的条件 层形成步骤，用于沉积到相同的基底材料基底上。

公开(公告)号：US06363881B2

公开(公告)日：2002-04-02

申请号：US09232600

申请日：1999-01-19

申请人： Masayoshi Murata ,  Yoshiaki Takeuchi ,  Hiroshi Mashima ,  Akemi Takano ,  Hirohisa Yoshida

发明人： Masayoshi Murata ,  Yoshiaki Takeuchi ,  Hiroshi Mashima ,  Akemi Takano ,  Hirohisa Yoshida

IPC分类号： C23C16509

CPC分类号： H01J37/32082 ,  H01J37/32541

摘要： Disclosed is a plasma chemical vapor deposition apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a target substrate by utilizing a glow discharge generated by an electric power supplied from a power source, comprising a reaction vessel, means for supplying a reactant gas into the reaction vessel, discharge means for discharge a waste gas of the reactant gas out of the reaction vessel, a ladder-shaped electrode for discharge generation arranged within the reaction vessel, a power source for supplying a high frequency power of 30 MHz to 200 MHz to the ladder-shaped electrode for a glow discharge generation, a heater for heating and supporting a target substrate, the heater being arranged within the reaction vessel in parallel to the ladder-shaped electrode for discharge generation, and a power distributor for uniformly distributing a high frequency power to the ladder-shaped electrode for discharge generation through a power supply wire.

摘要翻译： 公开了一种等离子体化学气相沉积设备，用于通过利用由电源供应的电力产生的辉光放电来在目标衬底的表面上形成非晶薄膜，微晶薄膜或多晶薄膜，其包括反应 容器，用于将反应气体供给到反应容器中的装置，用于将反应气体的废气排出反应容器的排出装置，设置在反应容器内的用于排放产生的梯形电极， 用于辉光放电产生的梯形电极的高频功率为30MHz至200MHz，用于加热和支撑目标衬底的加热器，加热器与反应容器内平行于梯形电极放电产生 以及用于均匀地将高频电力分配到梯形电极用于放电发生的功率分配器 h电源线。

公开(公告)号：US08088641B2

公开(公告)日：2012-01-03

申请号：US12993252

申请日：2008-10-30

申请人： Hiroshi Mashima ,  Koichi Asakusa ,  Akemi Takano ,  Nobuki Yamashita ,  Yoshiaki Takeuchi

发明人： Hiroshi Mashima ,  Koichi Asakusa ,  Akemi Takano ,  Nobuki Yamashita ,  Yoshiaki Takeuchi

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  C23C8/00

CPC分类号： H01L31/075 ,  H01L31/03762 ,  H01L31/0463 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.

摘要翻译： 一种制造光电器件的方法，其中当在i型非晶硅层上提供n型非晶硅层时，可以在不降低沉积速率的情况下实现期望的结晶比。 该制造方法包括沉积p型非晶硅层的p层形成步骤，在p型非晶硅层上沉积i型非晶硅层的i层形成步骤和n层形成 在i型非晶硅层上沉积n型非晶硅层的步骤，其中n层形成步骤包括在i型非晶硅层上沉积第一n层的第一n层形成步骤， 以及在第一n层上沉积第二n层的第二n层形成步骤，并且用于第一n层形成步骤的沉积条件是产生比第二n层的沉积条件更高的结晶比的条件 层形成步骤，用于沉积到相同的基底材料基底上。

公开(公告)号：US20050272261A1

公开(公告)日：2005-12-08

申请号：US10518371

申请日：2003-10-29

申请人： Hiroshi Mashima ,  Akira Yamada ,  Keisuke Kawamura ,  Kenji Tagashira ,  Yoshiaki Takeuchi

发明人： Hiroshi Mashima ,  Akira Yamada ,  Keisuke Kawamura ,  Kenji Tagashira ,  Yoshiaki Takeuchi

IPC分类号： C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01J7/24 ,  H01L21/44 ,  H05B31/26

CPC分类号： H01J37/32174 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32577

摘要： A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (19a to 19h and 24a to 24h) having a standard length and vacuum cables (20a to 20h and 25a to 25h) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film. The distribution of the film formed on the substrate is made uniform by repeating the above operations.

摘要翻译： 提供了一种使膜厚分布特性均匀的方法，通过操纵传输高频电力的电缆的电气特性，避免了高频电力流之间的相位差的产生。 同轴电缆（19 a至19 h和24 a至24 h）安装有标准长度和真空电缆（20 a至20 h和25 a至25 h），然后通过实际供电高度在基板上形成薄膜 频率电力，然后观察气相沉积的条件，例如膜的厚度。 基于这些观察，改变了与馈送点和电极相连的同轴电缆的全部长度，这些电极对应于需要调节的衬底上的位置。 再次安装同轴电缆，提供与上次操作相同的高频电力，形成薄膜。 通过重复上述操作，使形成在基板上的膜的分布均匀。

公开(公告)号：US20050241768A1

公开(公告)日：2005-11-03

申请号：US10519553

申请日：2003-10-01

申请人： Keisuke Kawamura ,  Akira Yamada ,  Hiroshi Mashima ,  Yoshiaki Takeuchi

发明人： Keisuke Kawamura ,  Akira Yamada ,  Hiroshi Mashima ,  Yoshiaki Takeuchi

IPC分类号： H05H1/46 ,  C23C16/509 ,  C23F1/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01J37/32155 ,  H01J37/32091

摘要： An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.

摘要翻译： 本发明的目的是提供一种高频等离子体发生装置和方法，与现有的装置相比，能够进一步提高基板上膜厚度的均匀性。 在反应室（1）中设置接地电极（3），放电电极（2）与接地电极（3）相对设置。 作为处理对象的基板（4）与接地电极（3）紧密接触。 向放电电极（2）施加高频电压，以在接地电极和放电电极之间产生等离子体。 RF电源（15）产生第一高频电压，并且在放电电极（2）的侧面部分上的馈电点（9）上输出产生的电压。 RF电源（16）产生第二高频电压，并且在放电电极（2）的另一侧面部分上的馈电点（9）上输出产生的电压。 这里，第二高频电压具有与第一高频电压相同的频率，并且具有随着由预定调制信号调制的低频信号而变化的相位。

公开(公告)号：US20050223990A1

公开(公告)日：2005-10-13

申请号：US10519475

申请日：2003-10-01

申请人： Keisuke Kawamura ,  Akira Yamada ,  Hiroshi Mashima ,  Kenji Tagashira ,  Yoshiaki Takeuchi

发明人： Keisuke Kawamura ,  Akira Yamada ,  Hiroshi Mashima ,  Kenji Tagashira ,  Yoshiaki Takeuchi

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/509 ,  H01J37/32183 ,  H01J37/32541

摘要： An object is to provide apparatuses for plasma processing which can make the distribution of the film thickness of a substance on a substrate uniform, methods of processing a substrate therewith, apparatuses for plasma-enhanced chemical vapor deposition, and methods for film formation therewith. When a desired substance is vapor deposited on the surface of a substrate (3), characteristics of the distribution of the thickness of a film on the substrate having a large area are improved by eliminating local imbalance in the distribution of the film thickness originating from deviation in the distribution of voltage on the ladder electrode (2), by way of adjusting impedance matching between each coaxial cable and corresponding feeding point for the ladder-shaped electrode (2) using branch cables provided to the coaxial cables for supplying high-frequency electric power to a ladder-shaped electrode (2) so as to make the film thickness uniform in the direction at right angles with the direction of fed electric power, whereby high-frequency electric power which is fed to each longitudinal electrode rod (2a) of the ladder-shaped electrode (2) can be adjusted, and distribution of voltage at a right or left part of the substrate and distribution of voltage at a central part of the substrate can be balanced, as well as by way of promoting uniformity in the distribution of the film thickness in the direction of fed electric power, by supplying streams of high-frequency electric power having the same frequency from two power supplies to the ladder-shaped electrode (2) with the phase difference between the high-frequency electric powers being varied over time.

摘要翻译： 目的在于提供能够使基板上的物质的膜厚分布均匀的等离子体处理装置，用于处理基板的方法，等离子体增强化学气相沉积的装置及其成膜方法。 当在基板（3）的表面上气相沉积所需物质时，通过消除由于偏差导致的膜厚度分布的局部不平衡，改善了具有大面积的基板上的膜的厚度分布特性 在梯形电极（2）上的电压分配中，通过使用提供给用于提供高频电气的同轴电缆的分支电缆来调节每个同轴电缆与梯形电极（2）的相应馈电点之间的阻抗匹配 向梯形电极（2）施加电力以使膜厚度与与馈送电力方向成直角的方向均匀，由此，供给到每个纵向电极棒（2a）的高频电力 可以调节梯形电极（2），并且可以调整基板的右侧或左侧的电压分布以及中心部分的电压分布 可以通过将来自两个电源的具有相同频率的高频电力的流提供给梯子，从而通过提高膜馈送电力方向上的膜厚分布的均匀性来平衡基板 形状的电极（2），其中高频电功率之间的相位差随时间变化。