发明申请
- 专利标题： Method of cvd for forming silicon nitride film on substrate
- 专利标题（中）： 用于在衬底上形成氮化硅膜的cvd方法
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申请号： US10518025申请日： 2004-01-19
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公开(公告)号： US20050255712A1公开(公告)日： 2005-11-17
- 发明人: Hitoshi Kato , Koichi Orito , Hiroyuki Kikuchi , Shingo Maku
- 申请人： Hitoshi Kato , Koichi Orito , Hiroyuki Kikuchi , Shingo Maku
- 申请人地址： JP Tokyo 107-8481
- 专利权人： TOKYO ELECTRONLIMITED
- 当前专利权人： TOKYO ELECTRONLIMITED
- 当前专利权人地址： JP Tokyo 107-8481
- 优先权： JP2003-016659 20030624
- 国际申请： PCT/JP04/00370 WO 20040119
- 主分类号： C23C16/34
- IPC分类号： C23C16/34 ; C23C16/46 ; H01L21/318 ; H01L21/471
摘要：
A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).
公开/授权文献
- US07094708B2 Method of CVD for forming silicon nitride film on substrate 公开/授权日：2006-08-22