公开(公告)号：US07094708B2

公开(公告)日：2006-08-22

申请号：US10518025

申请日：2004-01-19

申请人： Hitoshi Kato ,  Koichi Orito ,  Hiroyuki Kikuchi ,  Shingo Maku

发明人： Hitoshi Kato ,  Koichi Orito ,  Hiroyuki Kikuchi ,  Shingo Maku

IPC分类号： H01L21/31

CPC分类号： C23C16/45542 ,  C23C16/345 ,  C23C16/46 ,  H01L21/3185

摘要： A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).

摘要翻译： CVD方法是在目标衬底（W）上形成氮化硅膜。 该方法包括在处理温度下加热容纳在处理容器（8）中的基板（W），并将包含六乙基氨基 - 乙硅烷气体和氨气的处理气体供给到在工艺温度下加热的基板（W）上，由此沉积 在衬底（W）上的氮化硅膜。

公开(公告)号：US20050255712A1

公开(公告)日：2005-11-17

申请号：US10518025

申请日：2004-01-19

申请人： Hitoshi Kato ,  Koichi Orito ,  Hiroyuki Kikuchi ,  Shingo Maku

发明人： Hitoshi Kato ,  Koichi Orito ,  Hiroyuki Kikuchi ,  Shingo Maku

IPC分类号： C23C16/34 ,  C23C16/46 ,  H01L21/318 ,  H01L21/471

CPC分类号： C23C16/45542 ,  C23C16/345 ,  C23C16/46 ,  H01L21/3185

摘要： A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).

摘要翻译： CVD方法是在目标衬底（W）上形成氮化硅膜。 该方法包括在处理温度下加热容纳在处理容器（8）中的基板（W），并将包含六乙基氨基 - 乙硅烷气体和氨气的处理气体供给到在工艺温度下加热的基板（W）上，由此沉积 在衬底（W）上的氮化硅膜。

公开(公告)号：US20060022228A1

公开(公告)日：2006-02-02

申请号：US11038165

申请日：2005-01-21

申请人： Takeshi Hoshi ,  Tsuyoshi Saito ,  Hitoshi Kato ,  Koichi Orito

发明人： Takeshi Hoshi ,  Tsuyoshi Saito ,  Hitoshi Kato ,  Koichi Orito

IPC分类号： H01L29/78 ,  H01L21/4763

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/45527 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/8238 ,  H01L21/823864 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate.

摘要翻译： 制造在衬底表面上形成氮化硅膜的氮化硅膜的方法包括顺序地重复第一至第三步骤。 第一步包括将含有硅和氮的第一气体进料到基材的表面。 第二步骤包括将含有氮气的第二气体进料到基材的表面。 第三步骤包括将含有氢的第三气体进料到基材的表面。

公开(公告)号：US20080274605A1

公开(公告)日：2008-11-06

申请号：US12167025

申请日：2008-07-02

申请人： Takeshi Hoshi ,  Tsuyoshi Saito ,  Hitoshi Kato ,  Koichi Orito

发明人： Takeshi Hoshi ,  Tsuyoshi Saito ,  Hitoshi Kato ,  Koichi Orito

IPC分类号： H01L21/31 ,  H01L21/28

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/45527 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/8238 ,  H01L21/823864 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate.

摘要翻译： 制造在衬底表面上形成氮化硅膜的氮化硅膜的方法包括顺序地重复第一至第三步骤。 第一步包括将含有硅和氮的第一气体进料到基材的表面。 第二步骤包括将含有氮气的第二气体进料到基材的表面。 第三步骤包括将含有氢的第三气体进料到基材的表面。

公开(公告)号：US09093490B2

公开(公告)日：2015-07-28

申请号：US12713317

申请日：2010-02-26

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/455 ,  C23C16/40 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01L21/68764 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45589 ,  H01L21/68771

摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.

摘要翻译： 公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于 基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。

公开(公告)号：US20110159188A1

公开(公告)日：2011-06-30

申请号：US12972599

申请日：2010-12-20

申请人： Hitoshi Kato ,  Kohichi Orito ,  Hiroyuki Kikuchi ,  Muneyuki Otani ,  Takeshi Kumagai ,  Kensaku Narushima ,  Takashi Nishimori

发明人： Hitoshi Kato ,  Kohichi Orito ,  Hiroyuki Kikuchi ,  Muneyuki Otani ,  Takeshi Kumagai ,  Kensaku Narushima ,  Takashi Nishimori

IPC分类号： C23C16/34 ,  C23C16/00 ,  C23C16/52

CPC分类号： C23C16/4584 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45523 ,  C23C16/45591 ,  C23C16/4585 ,  C23C16/50 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/76843

摘要： A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.

摘要翻译： 当沉积氮化钛膜时，成膜装置以100rpm或更高的旋转速度使转台和每个气体喷嘴彼此相对旋转，以加速反应气体供应循环或反应产物的成膜循环。 在已经产生的反应产物的晶粒尺寸由于已经产生的反应产物的结晶开始生长之后，沉积下一个反应产物的膜。

公开(公告)号：US20100260936A1

公开(公告)日：2010-10-14

申请号：US12753978

申请日：2010-04-05

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/52 ,  C23C16/00 ,  C23C16/44

CPC分类号： H01L21/67207 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771

摘要： In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate.

摘要翻译： 在基板处理装置中，进行退火处理的成膜装置和热处理装置气密地连接到真空输送室，并且在真空输送中设置使基板绕垂直轴旋转的基板旋转单元 房间。 控制单元设置成在基板的成膜过程的中间通过旋转装置停止多个反应气体供给单元，分离气体供给单元和台的相对旋转，使得输送单元取出 来自真空室的基板，并输出使基板旋转单元改变基板的方向的控制信号。

公开(公告)号：US08992685B2

公开(公告)日：2015-03-31

申请号：US12753978

申请日：2010-04-05

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi ,  Yu Wamura ,  Jun Ogawa

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi ,  Yu Wamura ,  Jun Ogawa

IPC分类号： C23C16/00 ,  H01L21/67 ,  H01L21/687 ,  C23C16/54 ,  C23C16/52

CPC分类号： H01L21/67207 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771

摘要： In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate.

摘要翻译： 在基板处理装置中，进行退火处理的成膜装置和热处理装置气密地连接到真空输送室，并且在真空输送中设置使基板绕垂直轴旋转的基板旋转单元 房间。 控制单元设置成在基板的成膜过程的中间通过旋转装置停止多个反应气体供给单元，分离气体供给单元和台的相对旋转，使得输送单元取出 来自真空室的基板，并且输出使基板旋转单元改变基板的方向的控制信号。

公开(公告)号：US08882915B2

公开(公告)日：2014-11-11

申请号：US12753932

申请日：2010-04-05

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  C23C16/48 ,  C23C16/40 ,  C23C16/54 ,  H01L21/687

CPC分类号： H01L21/67115 ,  C23C16/402 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/46 ,  C23C16/463 ,  C23C16/482 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68771

摘要： A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product.

摘要翻译： 放置晶片的旋转台围绕垂直轴旋转，以向晶片的上表面提供用于允许第一反应气体吸附在上表面上的第一反应气体，与 产生具有回流性的中间产物的第一反应气体和与中间产物反应以产生反应产物的第二反应气体; 并且通过加热灯加热反应产物以使反应产物致密化。

公开(公告)号：US08721790B2

公开(公告)日：2014-05-13

申请号：US12963673

申请日：2010-12-09

申请人： Hitoshi Kato ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

IPC分类号： C23C16/453 ,  C23C16/455 ,  C23C16/458 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45551 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45578

摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.

摘要翻译： 一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间， 可能流经第二空间而不是第一空间。