公开(公告)号：US07094708B2

公开(公告)日：2006-08-22

申请号：US10518025

申请日：2004-01-19

申请人： Hitoshi Kato ,  Koichi Orito ,  Hiroyuki Kikuchi ,  Shingo Maku

发明人： Hitoshi Kato ,  Koichi Orito ,  Hiroyuki Kikuchi ,  Shingo Maku

IPC分类号： H01L21/31

CPC分类号： C23C16/45542 ,  C23C16/345 ,  C23C16/46 ,  H01L21/3185

摘要： A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).

摘要翻译： CVD方法是在目标衬底（W）上形成氮化硅膜。 该方法包括在处理温度下加热容纳在处理容器（8）中的基板（W），并将包含六乙基氨基 - 乙硅烷气体和氨气的处理气体供给到在工艺温度下加热的基板（W）上，由此沉积 在衬底（W）上的氮化硅膜。

公开(公告)号：US20050255712A1

公开(公告)日：2005-11-17

申请号：US10518025

申请日：2004-01-19

申请人： Hitoshi Kato ,  Koichi Orito ,  Hiroyuki Kikuchi ,  Shingo Maku

发明人： Hitoshi Kato ,  Koichi Orito ,  Hiroyuki Kikuchi ,  Shingo Maku

IPC分类号： C23C16/34 ,  C23C16/46 ,  H01L21/318 ,  H01L21/471

CPC分类号： C23C16/45542 ,  C23C16/345 ,  C23C16/46 ,  H01L21/3185

摘要： A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).

摘要翻译： CVD方法是在目标衬底（W）上形成氮化硅膜。 该方法包括在处理温度下加热容纳在处理容器（8）中的基板（W），并将包含六乙基氨基 - 乙硅烷气体和氨气的处理气体供给到在工艺温度下加热的基板（W）上，由此沉积 在衬底（W）上的氮化硅膜。

公开(公告)号：US08721790B2

公开(公告)日：2014-05-13

申请号：US12963673

申请日：2010-12-09

申请人： Hitoshi Kato ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Kohichi Orito ,  Yasushi Takeuchi ,  Hiroyuki Kikuchi

IPC分类号： C23C16/453 ,  C23C16/455 ,  C23C16/458 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45551 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45578

摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.

摘要翻译： 一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间， 可能流经第二空间而不是第一空间。

公开(公告)号：US20130087097A1

公开(公告)日：2013-04-11

申请号：US13644697

申请日：2012-10-04

申请人： Hitoshi KATO ,  Takeshi Kobayashi ,  Hiroyuki Kikuchi ,  Shigehiro Miura

发明人： Hitoshi KATO ,  Takeshi Kobayashi ,  Hiroyuki Kikuchi ,  Shigehiro Miura

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23C16/458

CPC分类号： C23C16/45536 ,  C23C16/45544 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3211

摘要： An apparatus is configured to include a gas supplying part configured to supply a plasma generating gas on a surface on a substrate mounting area side in a turntable and an antenna configured to convert the plasma generating gas to plasma by induction coupling and provided facing the surface of the substrate mounting area side in the turntable so as to extend from a center part to an outer edge part of the turntable. The antenna is arranged so as to have a distance from the turntable in the substrate mounting area not less than 3 mm longer on the center part side than on the outer edge part side.

摘要翻译： 一种装置，被配置为包括气体供应部件，其构造成在转盘的基板安装区域侧的表面上提供等离子体产生气体，以及天线，被配置为通过感应耦合将等离子体产生气体转换成等离子体， 旋转台中的基板安装区域侧从转台的中心部分延伸到外边缘部分。 天线布置成在中心部分侧比在外边缘部分侧不小于3mm的基板安装区域中的转盘具有距离。

公开(公告)号：US20110039026A1

公开(公告)日：2011-02-17

申请号：US12852545

申请日：2010-08-09

申请人： Hitoshi Kato ,  Hiroyuki Kikuchi ,  Shigehiro Ushikubo

发明人： Hitoshi Kato ,  Hiroyuki Kikuchi ,  Shigehiro Ushikubo

IPC分类号： C23C14/22 ,  C23C16/44

CPC分类号： C23C16/45551 ,  C23C16/402 ,  C23C16/45536

摘要： A silicon oxide film is deposited by rotating a rotation table on which a wafer W is placed to allow BTBAS gas to be adsorbed on an upper surface of the wafer W and supply a O3 gas to the upper surface of the wafer W for allowing the BTBAS gas adsorbed on the upper surface of the wafer W to react. After depositing the silicon oxide film, a reforming process is performed every deposition cycle by supplying a plasma of Ar gas to the silicon oxide film on the wafer from an activated gas injector.

摘要翻译： 通过旋转放置晶片W的旋转台来沉积氧化硅膜，以允许BTBAS气体吸附在晶片W的上表面上，并将O 3气体供应到晶片W的上表面，以允许BTBAS 吸附在晶片W的上表面上的气体反应。 在沉积氧化硅膜之后，通过从活化气体注入器向晶片上的氧化硅膜提供Ar气体的等离子体，进行每个沉积循环的重整过程。

公开(公告)号：US20100260935A1

公开(公告)日：2010-10-14

申请号：US12753932

申请日：2010-04-05

申请人： HITOSHI KATO ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： HITOSHI KATO ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/52 ,  C23C16/00 ,  C23C16/46

CPC分类号： H01L21/67115 ,  C23C16/402 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/46 ,  C23C16/463 ,  C23C16/482 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68771

摘要： A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product.

摘要翻译： 放置晶片的旋转台围绕垂直轴旋转，以向晶片的上表面提供用于允许第一反应气体吸附在上表面上的第一反应气体，与 产生具有回流性的中间产物的第一反应气体和与中间产物反应以产生反应产物的第二反应气体; 并且通过加热灯加热反应产物以使反应产物致密化。

公开(公告)号：US09932674B2

公开(公告)日：2018-04-03

申请号：US13467324

申请日：2012-05-09

申请人： Hitoshi Kato ,  Katsuyuki Hishiya ,  Hiroyuki Kikuchi ,  Shigehiro Ushikubo ,  Shigenori Ozaki

发明人： Hitoshi Kato ,  Katsuyuki Hishiya ,  Hiroyuki Kikuchi ,  Shigehiro Ushikubo ,  Shigenori Ozaki

IPC分类号： C23C16/00 ,  H01L21/306 ,  C23C16/54 ,  H01J37/32 ,  C23C16/455

CPC分类号： C23C16/54 ,  C23C16/4554 ,  H01J37/321

摘要： A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.

公开(公告)号：US20110155057A1

公开(公告)日：2011-06-30

申请号：US12975355

申请日：2010-12-22

申请人： Hitoshi KATO ,  Tatsuya Tamura ,  Shigehiro Ushikubo ,  Hiroyuki Kikuchi

发明人： Hitoshi KATO ,  Tatsuya Tamura ,  Shigehiro Ushikubo ,  Hiroyuki Kikuchi

IPC分类号： C23C16/44 ,  C23C16/505

CPC分类号： H01L21/68764 ,  C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32733 ,  H01J37/32752 ,  H01L21/68771

摘要： A plasma process apparatus for processing a substrate by using plasma including a vacuum chamber in which the processing of the substrate is performed, a turntable inside the vacuum chamber, the turntable having at least one substrate receiving area, a rotation mechanism rotating the turntable, a gas supplying part supplying plasma generation gas to the substrate receiving area, a main plasma generating part ionizing the plasma generation gas, being provided in a position opposite to a passing area of the substrate receiving area, and extending in a rod-like manner from a center portion of the turntable to an outer circumferential portion of the turntable, an auxiliary plasma generating part compensating for insufficient plasma of the main plasma generating part, the auxiliary plasma generating part being separated from the main plasma generating part in a circumferential direction of the vacuum chamber, and an evacuating part evacuating the vacuum chamber.

摘要翻译： 一种等离子体处理装置，用于通过使用等离子体处理基板，所述等离子体包括执行基板的处理的真空室，真空室内的转台，具有至少一个基板接收区域的转台，旋转转台的旋转机构， 向基板接收区域供给等离子体产生气体的气体供给部，将等离子体产生气体离子化的主等离子体产生部设置在与基板容纳区域的通过区域相反的位置，并且从棒状状延伸 转盘的中心部分到转盘的外周部分，辅助等离子体产生部件补偿主等离子体产生部件的等离子体不足，辅助等离子体产生部件在真空的圆周方向与主等离子体产生部件分离 并且抽真空部分抽真空室。

公开(公告)号：US06306764B1

公开(公告)日：2001-10-23

申请号：US09532901

申请日：2000-03-22

申请人： Hitoshi Kato ,  Takako Sano ,  Yukio Yamamoto ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Takako Sano ,  Yukio Yamamoto ,  Hiroyuki Kikuchi

IPC分类号： H01L2144

CPC分类号： H01L21/67109 ,  Y10S438/907

摘要： In a batch type vertical heat-treating method, first, product wafers and dummy wafers are set to be stacked on an upstream side of a flow of a process gas, in heat treatment, within main holding positions of a holder. The dummy substrates are set more downstream of the process gas than the product wafers. The product wafers and the dummy wafers are set in the holder in a total number smaller than a total number of the main holding positions corresponding to a maximum number of wafers that can be held by the holder, and the holder is in a partially loaded state. The partially loaded holder is loaded in a process vessel, and the product wafers are processed in the process vessel.

摘要翻译： 在间歇式立式热处理方法中，首先，在保持器的主保持位置内，在处理气体的流动的上游侧将产品晶片和虚设晶片设置在热处理中。 虚设基板设置在处理气体比产品晶片更多的下游。 产品晶片和虚拟晶片被设置在保持器中，总数小于对应于可由保持器保持的最大数量的晶片的主保持位置的总数，并且保持器处于部分负载状态 。 将部分加载的保持器装载在处理容器中，并且在处理容器中处理产品晶片。

公开(公告)号：US09093490B2

公开(公告)日：2015-07-28

申请号：US12713317

申请日：2010-02-26

申请人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Manabu Honma ,  Hiroyuki Kikuchi

IPC分类号： C23C16/455 ,  C23C16/40 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01L21/68764 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45589 ,  H01L21/68771

摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.

摘要翻译： 公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于 基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。