Invention Application
- Patent Title: Semiconductor device and method for producing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US10989024Application Date: 2004-11-16
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Publication No.: US20050260805A1Publication Date: 2005-11-24
- Inventor: Tomohiro Okamura
- Applicant: Tomohiro Okamura
- Applicant Address: JP Minato-ku
- Assignee: Oki Electric Co., Ltd.
- Current Assignee: Oki Electric Co., Ltd.
- Current Assignee Address: JP Minato-ku
- Priority: JPJP2004-150281 20040520
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/00 ; H01L21/331 ; H01L21/336 ; H01L21/338 ; H01L21/84 ; H01L29/417 ; H01L29/423 ; H01L29/49 ; H01L29/786
Abstract:
A method for producing a semiconductor device with an SOI substrate having a support substrate 1 and a semiconductor layer 3 that interpose a first insulating film 2 between them includes the following steps. An element region and an element-separation region 4 are formed in the semiconductor layer 3. A gate insulating film 5 is formed on the semiconductor layer 3. A gate electrode 6 is formed on the gate insulating film 5. A second insulating film 7 is formed. The gate insulating film 5 is removed. First thickness adjustment is performed. Ion implantation introducing low concentration impurities is performed on the thickness-adjusted semiconductor layers 3 and 8. A first sidewall portion 7a is formed on the side surfaces of the gate electrode 6. A second sidewall portion 10a is formed on the side surfaces of the first sidewall portion 7a.
Public/Granted literature
- US07118978B2 Semiconductor device and method for producing the same Public/Granted day:2006-10-10
Information query
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