发明申请
- 专利标题: Circuit device and manufacturing method thereof
- 专利标题(中): 电路装置及其制造方法
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申请号: US11139263申请日: 2005-05-27
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公开(公告)号: US20050263880A1公开(公告)日: 2005-12-01
- 发明人: Yusuke Igarashi , Sadamichi Takakusaki , Hideki Mizuhara , Ryosuke Usui
- 申请人: Yusuke Igarashi , Sadamichi Takakusaki , Hideki Mizuhara , Ryosuke Usui
- 优先权: JPP.2004-162654 20040531
- 主分类号: H05K3/46
- IPC分类号: H05K3/46 ; H01L21/48 ; H01L21/50 ; H01L23/12 ; H01L23/34 ; H01L23/373 ; H01L23/538 ; H01L25/00 ; H05K1/02 ; H05K1/05 ; H05K3/00 ; H05K3/28
摘要:
A circuit device having a multilayered wiring structure and an excellent heat dissipation property, and a method of manufacturing the circuit device are provided. In a circuit device, a multilayered wiring structure including a first conductive pattern and a second conductive pattern is formed on a surface of a circuit substrate. A first insulating layer is formed entirely on the surface of the circuit substrate. The first conductive pattern and the second conductive pattern are mutually insulated by a second insulating layer. An amount and grain sizes of filler included in the second insulating layer are smaller than an amount and grain sizes of filler included in the first insulating layer. Therefore, it is easier to connect the above two conductive patterns by way of penetrating the second insulating layer.
公开/授权文献
- US07221049B2 Circuit device and manufacturing method thereof 公开/授权日:2007-05-22
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