发明申请
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11194701申请日: 2005-08-02
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公开(公告)号: US20050269590A1公开(公告)日: 2005-12-08
- 发明人: Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
- 申请人: Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
- 专利权人: Renesas Technology Corp.,Hitachi Tohbu Semiconductor, Ltd.
- 当前专利权人: Renesas Technology Corp.,Hitachi Tohbu Semiconductor, Ltd.
- 优先权: JP10-190809 19980706; JP11-41045 19990219
- 主分类号: H01L23/04
- IPC分类号: H01L23/04 ; H01L23/49 ; H01L23/498 ; H01L23/552 ; H01L23/66 ; H01L29/22 ; H03F3/195 ; H03F3/60 ; H05K1/00 ; H05K1/02 ; H05K1/18 ; H05K3/40
摘要:
In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
公开/授权文献
- US07068521B2 Semiconductor device 公开/授权日:2006-06-27