Invention Application
US20050271904A1 Electrodeposition of FeCoNiV films with high resistivity and high saturation magnetization
有权
电沉积具有高电阻率和高饱和磁化强度的FeCoNiV薄膜
- Patent Title: Electrodeposition of FeCoNiV films with high resistivity and high saturation magnetization
- Patent Title (中): 电沉积具有高电阻率和高饱和磁化强度的FeCoNiV薄膜
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Application No.: US10860716Application Date: 2004-06-03
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Publication No.: US20050271904A1Publication Date: 2005-12-08
- Inventor: Feiyue Li , Xiaomin Liu
- Applicant: Feiyue Li , Xiaomin Liu
- Assignee: Headway Technologies Inc.
- Current Assignee: Headway Technologies Inc.
- Main IPC: C22C38/00
- IPC: C22C38/00 ; B05D5/12 ; C25D3/56 ; G11B5/187 ; G11B5/265 ; G11B5/29 ; G11B5/31 ; G11B5/39 ; H01F10/16 ; H01F41/26

Abstract:
A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FewCoxNiyVz in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density Bs greater than 1.9 Telsa and a resistivity ρ higher than 70 μohms-cm.
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