发明申请
- 专利标题: Electric component for high frequency power amplifier
- 专利标题(中): 高频功率放大器的电气元件
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申请号: US11149265申请日: 2005-06-10
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公开(公告)号: US20050280471A1公开(公告)日: 2005-12-22
- 发明人: Kouichi Matsushita , Kenichi Shimamoto , Kazuhiro Koshio , Kazuhiko Ishimoto , Takayuki Tsutsui
- 申请人: Kouichi Matsushita , Kenichi Shimamoto , Kazuhiro Koshio , Kazuhiko Ishimoto , Takayuki Tsutsui
- 优先权: JP2004-183169 20040622
- 主分类号: H03F1/02
- IPC分类号: H03F1/02 ; H03F1/30 ; H03F1/52 ; H03F3/04 ; H03F3/195 ; H03F3/21
摘要:
An RF power module in which operating voltage is controlled by a control signal based on amplitude information includes a temperature detecting device which is provided over a semiconductor chip formed with an amplifying transistor or a semiconductor chip formed with a power source circuit; and a detector having a hysteresis characteristic which is provided over the semiconductor chip formed with the device or a different semiconductor chip, applies a bias to the temperature detecting device to compare the state of the device at two reference levels, outputs a signal indicating abnormality when judging that the temperature of the semiconductor chip formed with the temperature detecting device is above a predetermined temperature, and outputs a signal indicating normality when judging that the temperature of the semiconductor chip is below a second predetermined temperature lower than the predetermined temperature.
公开/授权文献
- US07271658B2 Electric component for high frequency power amplifier 公开/授权日:2007-09-18
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