High frequency power amplifier circuit and electric component for high frequency power amplifier
    1.
    发明授权
    High frequency power amplifier circuit and electric component for high frequency power amplifier 有权
    高频功率放大器电路和高频功率放大器电气元件

    公开(公告)号:US07271662B2

    公开(公告)日:2007-09-18

    申请号:US11227109

    申请日:2005-09-16

    IPC分类号: H03G5/16 H03F3/68

    摘要: In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, this invention enables preventing waveform distortion near the peak output power level by allowing sufficient idle currents to flow through the transistors for amplification, while enhancing the power efficiency in a low output power region. The power amplifier includes a detection circuit comprising a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage conversion means which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detection and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.

    摘要翻译: 在通过电流镜像将偏置电压施加到晶体管以进行放大的高频功率放大器电路中,本发明能够通过允许足够的空闲电流流过晶体管进行放大,从而防止峰值输出功率电平附近的波形失真,同时增强 低输出功率区域的功率效率。 功率放大器包括检测电路,该检测电路包括用于检测的晶体管,其将用于在其控制端子处放大的最后级晶体管的输入信号的AC分量接收;反射电流流过该晶体管的电流镜电路, 电压转换装置,其将在电流镜电路的从侧中流动的电流转换成电压。 在检测电路中,用于产生用于放大的晶体管的偏置电压的偏置电路的电压被施加到用于检测的晶体管的控制端,并且检测电路的输出被施加到最后级晶体管的控制端 用于扩增。

    Semiconductor integrated circuit for high frequency power amplifier and electric components with the semiconductor integrated circuit
    2.
    发明申请
    Semiconductor integrated circuit for high frequency power amplifier and electric components with the semiconductor integrated circuit 有权
    半导体集成电路用于高频功率放大器和电子元件与半导体集成电路

    公开(公告)号:US20060066404A1

    公开(公告)日:2006-03-30

    申请号:US11216061

    申请日:2005-09-01

    IPC分类号: H03G3/10

    CPC分类号: H03G3/3047 H03G3/3042

    摘要: In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, The power amplifier includes a detection circuit including a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage converter which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detection, and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.

    摘要翻译: 在通过电流镜像将偏置电压施加到晶体管以进行放大的高频功率放大器电路中,功率放大器包括检测电路,该检测电路包括用于检测的晶体管,该晶体管接收到最后级晶体管的输入信号的AC分量, 在其控制端子放大电流镜电路,其反射流过该晶体管的电流;以及电流 - 电压转换器,其将在电流镜电路的从侧中流动的电流转换为电压。 在检测电路中,将用于产生用于放大的晶体管的偏置电压的偏置电路的电压施加到用于检测的晶体管的控制端,并且将检测电路的输出施加到最后级的控制端 晶体管用于放大。

    Video camera apparatus including programmable timing generation circuit
    3.
    发明授权
    Video camera apparatus including programmable timing generation circuit 失效
    包括可编程时序产生电路的摄像机装置

    公开(公告)号:US5483290A

    公开(公告)日:1996-01-09

    申请号:US132309

    申请日:1993-10-06

    摘要: A video camera in which an output signal from a solid-state image sensor is converted into the corresponding digital signal at the horizontal reading cycle of the output signal, and the digital signal is digital-processed with a first predetermined clock (fs) synchronous with the reading cycle to provide a luminance signal and a color difference signal. This video camera comprises data clock converter for latching the color signals; control circuit for detecting the phase of the changing point of the color signal generated; phase correction circuit for receiving the color signal after data clock conversion from said data clock converter, and producing a phase-corrected color difference signal by selecting, in accordance with said phase detecting signal from the control circuit, either one of the color difference signal having an intermediate phase obtained by interpolating the signals before and after the changing point of the received color signal and said color difference signal after data clock conversion; and modulation circuit for quadrature-balanced-modulating the color difference signal supplied from said phase correction circuit to provide a modulated color signal.

    摘要翻译: 一种摄像机,其中来自固态图像传感器的输出信号在输出信号的水平读取周期被转换成相应的数字信号,数字信号以与第一预定时钟(fs)同步的数字处理 提供亮度信号和色差信号的读取周期。 该摄像机包括用于锁存彩色信号的数据时钟转换器; 控制电路,用于检测所生成的彩色信号的变化点的相位; 相位校正电路,用于在从所述数据时钟转换器进行数据时钟转换之后接收彩色信号,并且通过根据来自控制电路的所述相位检测信号选择色差信号中的任一个,产生相位校正的色差信号,所述色差信号具有 通过在数据时钟转换之后内插所接收的彩色信号的变化点之前和之后的信号和所述色差信号而获得的中间相位; 以及用于对从所述相位校正电路提供的色差信号进行正交平衡调制以提供调制色信号的调制电路。

    Semiconductor integrated circuit for high frequency power amplifier and electric components with the semiconductor integrated circuit
    4.
    发明授权
    Semiconductor integrated circuit for high frequency power amplifier and electric components with the semiconductor integrated circuit 有权
    半导体集成电路用于高频功率放大器和电子元件与半导体集成电路

    公开(公告)号:US07395036B2

    公开(公告)日:2008-07-01

    申请号:US11216061

    申请日:2005-09-01

    IPC分类号: H01Q11/12

    CPC分类号: H03G3/3047 H03G3/3042

    摘要: In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, The power amplifier includes a detection circuit including a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage converter which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detections, and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.

    摘要翻译: 在通过电流镜像将偏置电压施加到晶体管以进行放大的高频功率放大器电路中,功率放大器包括检测电路,该检测电路包括用于检测的晶体管,该晶体管接收到最后级晶体管的输入信号的AC分量, 在其控制端子放大电流镜电路,其反射流过该晶体管的电流;以及电流 - 电压转换器,其将在电流镜电路的从侧中流动的电流转换为电压。 在检测电路中,用于产生用于放大的晶体管的偏置电压的偏置电路的电压被施加到用于检测的晶体管的控制端,并且检测电路的输出被施加到最后级的控制端 晶体管用于放大。

    Electronic component for high frequency power amplification
    5.
    发明授权
    Electronic component for high frequency power amplification 有权
    用于高频功率放大的电子元件

    公开(公告)号:US07994860B2

    公开(公告)日:2011-08-09

    申请号:US12565993

    申请日:2009-09-24

    IPC分类号: H03G3/30

    CPC分类号: H03G3/3047 H03F1/30 H03F3/195

    摘要: An electronic component for high frequency power amplification realizes an improvement in switching spectrum characteristics. The gain of an amplifying NMOS transistor is controlled by a bias voltage on which a bias control voltage is reflected. Further, a threshold voltage compensator compensates for a variation in threshold voltage with variations in the manufacture of the amplifying NMOS transistor. The threshold voltage compensator includes an NMOS transistor formed in the same process specification as the amplifying NMOS transistor and converts a variation in current flowing through the NMOS transistor depending on the variation in the threshold voltage of the amplifying NMOS transistor to its corresponding voltage by a resistor to compensate for the bias voltage. It is thus possible to reduce variations in so-called precharge level brought to fixed output power in a region (0 dBm or less, for example) low in output power.

    摘要翻译: 用于高频功率放大的电子部件实现了开关频谱特性的改进。 放大NMOS晶体管的增益由反射偏置控制电压的偏置电压控制。 此外,阈值电压补偿器通过放大NMOS晶体管的制造变化来补偿阈值电压的变化。 阈值电压补偿器包括以与放大NMOS晶体管相同的处理规范形成的NMOS晶体管,并且根据放大NMOS晶体管的阈值电压的变化转换为通过NMOS晶体管的电流的变化,由电阻器 以补偿偏置电压。 因此,可以减少在输出功率低的区域(例如,0dBm以下)带来固定输出功率的所谓预充电电平的变动。

    Electric component for high frequency power amplifier
    6.
    发明授权
    Electric component for high frequency power amplifier 有权
    高频功率放大器的电气元件

    公开(公告)号:US07271658B2

    公开(公告)日:2007-09-18

    申请号:US11149265

    申请日:2005-06-10

    IPC分类号: H03F3/04

    摘要: An RF power module in which operating voltage is controlled by a control signal based on amplitude information includes a temperature detecting device which is provided over a semiconductor chip formed with an amplifying transistor or a semiconductor chip formed with a power source circuit; and a detector having a hysteresis characteristic which is provided over the semiconductor chip formed with the device or a different semiconductor chip, applies a bias to the temperature detecting device to compare the state of the device at two reference levels, outputs a signal indicating abnormality when judging that the temperature of the semiconductor chip formed with the temperature detecting device is above a predetermined temperature, and outputs a signal indicating normality when judging that the temperature of the semiconductor chip is below a second predetermined temperature lower than the predetermined temperature.

    摘要翻译: 其中工作电压由基于振幅信息的控制信号控制的RF功率模块包括温度检测装置,其设置在形成有放大晶体管的半导体芯片或形成有电源电路的半导体芯片上; 以及设置在形成有该器件或不同半导体芯片的半导体芯片上的具有滞后特性的检测器,对温度检测装置施加偏压以比较两个基准电平的器件的状态,输出指示异常的信号 判断由温度检测装置形成的半导体芯片的温度高于预定温度,并且当判断半导体芯片的温度低于低于预定温度的第二预定温度时,输出表示正常的信号。

    Electric component for high frequency power amplifier
    7.
    发明申请
    Electric component for high frequency power amplifier 有权
    高频功率放大器的电气元件

    公开(公告)号:US20050280471A1

    公开(公告)日:2005-12-22

    申请号:US11149265

    申请日:2005-06-10

    摘要: An RF power module in which operating voltage is controlled by a control signal based on amplitude information includes a temperature detecting device which is provided over a semiconductor chip formed with an amplifying transistor or a semiconductor chip formed with a power source circuit; and a detector having a hysteresis characteristic which is provided over the semiconductor chip formed with the device or a different semiconductor chip, applies a bias to the temperature detecting device to compare the state of the device at two reference levels, outputs a signal indicating abnormality when judging that the temperature of the semiconductor chip formed with the temperature detecting device is above a predetermined temperature, and outputs a signal indicating normality when judging that the temperature of the semiconductor chip is below a second predetermined temperature lower than the predetermined temperature.

    摘要翻译: 其中工作电压由基于振幅信息的控制信号控制的RF功率模块包括温度检测装置,其设置在形成有放大晶体管的半导体芯片或形成有电源电路的半导体芯片上; 以及设置在形成有该器件或不同半导体芯片的半导体芯片上的具有滞后特性的检测器,对温度检测装置施加偏压以比较两个基准电平的器件的状态,输出指示异常的信号 判断由温度检测装置形成的半导体芯片的温度高于预定温度,并且当判断半导体芯片的温度低于低于预定温度的第二预定温度时,输出表示正常的信号。

    Ultra small video camera and a video camera system
    8.
    发明授权
    Ultra small video camera and a video camera system 失效
    超小型摄像机和摄像机系统

    公开(公告)号:US5646684A

    公开(公告)日:1997-07-08

    申请号:US512625

    申请日:1995-08-08

    摘要: Image data photographed by a video camera 20 is compressed by a compression and decompression circuit 5, the compressed image data is recorded in an incorporated type semiconductor memory 6 or disk-type memory 13 fixed in the video camera 20 and the recorded image data is transferred to an external recording device 23. Further, the external recording device 23 records the transferred image data in a data storage while it is being compressed. The video camera 20 receives, decompresses and converts into a television signal the compressed image data read by the external recording device 23 in a reproducing operation. A video camera system capable of recording and reproducing long hours of image data by using a video camera having an ultra small size comparable to that of an 8 mm video cassette can be realized by using such a construction.

    摘要翻译: 由摄像机20拍摄的图像数据由压缩和解压缩电路5压缩,压缩图像数据被记录在固定在摄像机20中的合并型半导体存储器6或盘式存储器13中,并且记录的图像数据被传送 另外,外部记录装置23在传送的图像数据被压缩的同时将其记录在数据存储器中。 视频摄像机20在再现操作中接收,解压缩并且将由外部记录装置23读取的压缩图像数据转换成电视信号。 通过使用这样的结构,可以实现能够通过使用具有与8mm视频盒相当的超小尺寸的摄像机来记录和再现长时间的图像数据的摄像机系统。

    ELECTRONIC COMPONENT FOR HIGH FREQUENCY POWER AMPLIFICATION
    9.
    发明申请
    ELECTRONIC COMPONENT FOR HIGH FREQUENCY POWER AMPLIFICATION 有权
    用于高频功率放大的电子元件

    公开(公告)号:US20100102887A1

    公开(公告)日:2010-04-29

    申请号:US12565993

    申请日:2009-09-24

    IPC分类号: H03G3/30

    CPC分类号: H03G3/3047 H03F1/30 H03F3/195

    摘要: An electronic component for high frequency power amplification realizes an improvement in switching spectrum characteristics. The gain of an amplifying NMOS transistor is controlled by a bias voltage on which a bias control voltage is reflected. Further, a threshold voltage compensator compensates for a variation in threshold voltage with variations in the manufacture of the amplifying NMOS transistor. The threshold voltage compensator includes an NMOS transistor formed in the same process specification as the amplifying NMOS transistor and converts a variation in current flowing through the NMOS transistor depending on the variation in the threshold voltage of the amplifying NMOS transistor to its corresponding voltage by a resistor to compensate for the bias voltage. It is thus possible to reduce variations in so-called precharge level brought to fixed output power in a region (0 dBm or less, for example) low in output power.

    摘要翻译: 用于高频功率放大的电子部件实现了开关频谱特性的改进。 放大NMOS晶体管的增益由反射偏置控制电压的偏置电压控制。 此外,阈值电压补偿器通过放大NMOS晶体管的制造变化来补偿阈值电压的变化。 阈值电压补偿器包括以与放大NMOS晶体管相同的处理规范形成的NMOS晶体管,并且根据放大NMOS晶体管的阈值电压的变化转换为通过NMOS晶体管的电流的变化,由电阻器 以补偿偏置电压。 因此,可以减少在输出功率低的区域(例如,0dBm以下)带来固定输出功率的所谓预充电电平的变动。

    High frequency power amplifier circuit and electric component for high frequency power amplifier
    10.
    发明申请
    High frequency power amplifier circuit and electric component for high frequency power amplifier 有权
    高频功率放大器电路和高频功率放大器电气元件

    公开(公告)号:US20060066398A1

    公开(公告)日:2006-03-30

    申请号:US11227109

    申请日:2005-09-16

    IPC分类号: H03G3/20

    摘要: In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, this invention enables preventing waveform distortion near the peak output power level by allowing sufficient idle currents to flow through the transistors for amplification, while enhancing the power efficiency in a low output power region. The power amplifier includes a detection circuit comprising a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage conversion means which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detection and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.

    摘要翻译: 在通过电流镜像将偏置电压施加到晶体管以进行放大的高频功率放大器电路中,本发明能够通过允许足够的空闲电流流过晶体管进行放大,从而防止峰值输出功率电平附近的波形失真,同时增强 低输出功率区域的功率效率。 功率放大器包括检测电路,该检测电路包括用于检测的晶体管,其将用于在其控制端子处放大的最后级晶体管的输入信号的AC分量接收;反射电流流过该晶体管的电流镜电路, 电压转换装置,其将在电流镜电路的从侧中流动的电流转换成电压。 在检测电路中,用于产生用于放大的晶体管的偏置电压的偏置电路的电压被施加到用于检测的晶体管的控制端,并且检测电路的输出被施加到最后级晶体管的控制端 用于扩增。