发明申请
- 专利标题： Methods for integrating replacement metal gate structures
- 专利标题（中）： 集成替代金属门结构的方法
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申请号： US11218355申请日： 2005-09-02
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公开(公告)号： US20060008954A1公开(公告)日： 2006-01-12
- 发明人: Jack Kavalieros , Justin Brask , Mark Doczy , Scott Hareland , Matthew Metz , Chris Barns , Robert Chau
- 申请人： Jack Kavalieros , Justin Brask , Mark Doczy , Scott Hareland , Matthew Metz , Chris Barns , Robert Chau
- 主分类号： H01L31/119
- IPC分类号： H01L31/119 ; H01L31/113 ; H01L31/062 ; H01L29/94 ; H01L29/76 ; H01L21/84 ; H01L21/00
摘要：
Methods and associated structures of forming a microelectronic device are described. Those methods comprise providing a substrate comprising a first transistor structure comprising an n-type gate material and second transistor structure comprising a p-type gate material, selectively removing the n-type gate material to form a recess in the first gate structure, and then filling the recess with an n-type metal gate material.
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