发明申请
- 专利标题： Reliability of low-k dielectric devices with energy dissipative layer
- 专利标题（中）： 低k介质器件与耗能层的可靠性
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申请号： US10891605申请日： 2004-07-15
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公开(公告)号： US20060012014A1公开(公告)日： 2006-01-19
- 发明人: Shyng-Tsong Chen , Stefanie Chiras , Michael Lane , Qinghuang Lin , Robert Rosenberg , Thomas Shaw , Terry Spooner
- 申请人： Shyng-Tsong Chen , Stefanie Chiras , Michael Lane , Qinghuang Lin , Robert Rosenberg , Thomas Shaw , Terry Spooner
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
The present invention provides a plastically and/or viscoelastically deformable layer that can be used in conjunction with a low-k dielectric (k of less than 4.0) to provide an electronic semiconductor structure having improved reliability. The deformable layer can be incorporated into various points within an electronic structure to dissipate energy within the structure that may cause the low-k dielectric material to crack or delaminate therefrom. Moreover, the presence of the deformable layer with the electronic structure improves the overall strength of the resultant structure.
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