- 专利标题： Semiconductor device and manufacturing method of semiconductor device
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申请号： US11182013申请日： 2005-07-15
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公开(公告)号： US20060022260A1公开(公告)日： 2006-02-02
- 发明人: Digh Hisamoto , Kan Yasui , Shinichiro Kimura , Tetsuya Ishimaru
- 申请人： Digh Hisamoto , Kan Yasui , Shinichiro Kimura , Tetsuya Ishimaru
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 优先权： JP2004-221764 20040729
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
Provided is a nonvolatile semiconductor memory device having a split gate structure, wherein a memory gate is formed over a convex shaped substrate and side surfaces of it is used as a channel. The nonvolatile semiconductor memory device according to the present invention is excellent in read current driving power even if a memory cell is scaled down.
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