发明申请
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11198191申请日: 2005-08-08
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公开(公告)号: US20060028868A1公开(公告)日: 2006-02-09
- 发明人: Tsutomu Okazaki , Daisuke Okada , Kyoya Nitta , Toshihiro Tanaka , Akira Kato , Toshikazu Matsui , Yasushi Ishii , Digh Hisamoto , Kan Yasui
- 申请人: Tsutomu Okazaki , Daisuke Okada , Kyoya Nitta , Toshihiro Tanaka , Akira Kato , Toshikazu Matsui , Yasushi Ishii , Digh Hisamoto , Kan Yasui
- 优先权: JP2004-231869 20040809
- 主分类号: G11C11/34
- IPC分类号: G11C11/34 ; G11C5/06
摘要:
Memory cells are disposed in plural array form. Select gate electrodes of the memory cells arranged in an X direction are connected to one another by select gate lines respectively. Memory gate electrodes are connected by memory gate lines respectively. The memory gate lines respectively connected to the memory gate electrodes of the memory cells adjacent to one another through source regions interposed therebetween are not electrically connected to one another. Each of the select gate lines has a first portion that extends in the X direction, and a second portion 9b of which one end is connected to the first portion and extends in a Y direction. The memory gate line is formed on its corresponding sidewall of the select gate line with an insulating film interposed therebetween. The memory gate line has a contact section that extends in the X direction from over a second portion of the select gate line to over an element isolation region, and is connected to its corresponding wiring through a plug that buries a contact hole formed over the contact section.
公开/授权文献
- US07245531B2 Semiconductor device 公开/授权日:2007-07-17