发明申请
- 专利标题： Insulating film, capacitive element and semiconductor storage device including the insulating film, and fabrication methods thereof
- 专利标题（中）： 包括绝缘膜的绝缘膜，电容元件和半导体存储装置及其制造方法
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申请号： US11194692申请日： 2005-08-02
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公开(公告)号： US20060030057A1公开(公告)日： 2006-02-09
- 发明人: Shinichiro Hayashi , Toru Nasu
- 申请人： Shinichiro Hayashi , Toru Nasu
- 优先权： JP2004-229021 20040805
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/94 ; H01L21/8242
摘要：
A capacitive element comprises: a lower electrode formed above a semiconductor substrate; a capacitive insulating film formed of a ferroelectric on the lower electrode so as to have a thickness of 100 nm or less; and an upper electrode formed on the capacitive insulating element. In any cross section of the capacitive insulating film which is perpendicular to the semiconductor substrate, a sum of the widths of voids generated in the capacitive insulating film which are measured in a direction perpendicular to the thickness direction of the capacitive insulating film is 20% or less of a unit width.
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