公开(公告)号：US20060108621A1

公开(公告)日：2006-05-25

申请号：US11248297

申请日：2005-10-13

申请人： Shinichiro Hayashi ,  Toru Nasu

发明人： Shinichiro Hayashi ,  Toru Nasu

IPC分类号： H01L29/94 ,  H01L21/00 ,  H01L21/20

CPC分类号： H01L21/02356 ,  C23C16/40 ,  C23C16/56 ,  H01L21/02197 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A capacitor insulating film is composed of a ferroelectric film formed on a substrate and containing an element functioning as a crystal nucleus which allows the growth of a crystal in a random crystal orientation.

摘要翻译： 电容绝缘膜由在基板上形成的铁电体膜构成，并且含有作为晶核的元素，其能够以随机的晶体取向生长晶体。

公开(公告)号：US20060030057A1

公开(公告)日：2006-02-09

申请号：US11194692

申请日：2005-08-02

申请人： Shinichiro Hayashi ,  Toru Nasu

发明人： Shinichiro Hayashi ,  Toru Nasu

IPC分类号： H01L21/00 ,  H01L29/94 ,  H01L21/8242

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A capacitive element comprises: a lower electrode formed above a semiconductor substrate; a capacitive insulating film formed of a ferroelectric on the lower electrode so as to have a thickness of 100 nm or less; and an upper electrode formed on the capacitive insulating element. In any cross section of the capacitive insulating film which is perpendicular to the semiconductor substrate, a sum of the widths of voids generated in the capacitive insulating film which are measured in a direction perpendicular to the thickness direction of the capacitive insulating film is 20% or less of a unit width.

摘要翻译： 电容元件包括：形成在半导体衬底上的下电极; 在下电极上形成由铁电体构成的电容绝缘膜，其厚度为100nm以下; 以及形成在电容绝缘元件上的上电极。 在垂直于半导体衬底的电容绝缘膜的任何横截面中，在与电容绝缘膜的厚度方向垂直的方向上测量的电容绝缘膜中产生的空隙宽度的总和为20％或 较小的单位宽度。

公开(公告)号：US20070161126A1

公开(公告)日：2007-07-12

申请号：US11540752

申请日：2006-10-02

申请人： Shinichiro Hayashi ,  Toru Nasu

发明人： Shinichiro Hayashi ,  Toru Nasu

IPC分类号： H01L21/00

CPC分类号： H01G4/085 ,  H01G4/1254 ,  H01G4/33 ,  H01L28/55 ,  H01L28/65

摘要： In a ferroelectric capacitor comprising: a lower electrode; a ferroelectric film formed on the lower electrode; and an upper electrode formed on the ferroelectric film, the coercive voltage of the ferroelectric film is 1.5 V or less and the polarization switching time of the ferroelectric film is 200 ns or less.

摘要翻译： 在铁电电容器中，包括：下电极; 形成在下电极上的铁电膜; 形成在强电介质膜上的上电极，强电介质膜的矫顽电压为1.5V以下，强电介质膜的极化切换时间为200ns以下。

公开(公告)号：US07220598B1

公开(公告)日：2007-05-22

申请号：US09639157

申请日：2000-08-16

申请人： Toru Nasu ,  Shinichiro Hayashi

发明人： Toru Nasu ,  Shinichiro Hayashi

IPC分类号： H01L21/00

CPC分类号： H01L27/11502 ,  H01L21/31691 ,  H01L27/11507

摘要： A method of making a ferroelectric thin film includes the step of forming a ferroelectric thin film with a randomly oriented layered structure on a surface of a conductor layer. At least the surface of the conductor layer has a spherical crystal structure.

摘要翻译： 制造铁电薄膜的方法包括在导体层的表面上形成具有随机取向的层状结构的铁电薄膜的步骤。 至少导体层的表面具有球形晶体结构。

公开(公告)号：US06447838B1

公开(公告)日：2002-09-10

申请号：US08543827

申请日：1995-10-16

申请人： Masamichi Azuma ,  Eiji Fujii ,  Yasuhiro Uemoto ,  Shinichiro Hayashi ,  Toru Nasu ,  Yoshihiro Shimada ,  Akihiro Matsuda ,  Tatsuo Otsuki ,  Michael C. Scott ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

发明人： Masamichi Azuma ,  Eiji Fujii ,  Yasuhiro Uemoto ,  Shinichiro Hayashi ,  Toru Nasu ,  Yoshihiro Shimada ,  Akihiro Matsuda ,  Tatsuo Otsuki ,  Michael C. Scott ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

IPC分类号： B05D512

CPC分类号： H01L28/75 ,  H01L21/28568 ,  H01L28/55 ,  H01L28/65 ,  Y10T29/42

摘要： A Ti/TiN adhesion/barrier layer is formed on a substrate and annealed. The anneal step is performed at a temperature within a good morphology range of 100° C. above a base barrier anneal temperature that depends on the thickness of said barrier layer. The base barrier anneal temperature is about 700° C. for a barrier thickness of about 1000 Å and about 800° C. for a barrier thickness of about 3000 Å. The barrier layer is 800 Å thick or thicker. A first electrode is formed, followed by a BST dielectric layer and a second electrode. A bottom electrode structure in which a barrier layer of TiN is sandwiched between two layers of platinum is also disclosed. The process and structures also produce good results with other capacitor dielectrics, including ferroelectrics such as strontium bismuth tantalate.

摘要翻译： 在基板上形成Ti / TiN粘合/阻挡层并退火。 退火步骤在取决于所述阻挡层的厚度的基本阻挡退火温度之上的100℃的良好形态范围内进行。 对于约3000的屏障厚度，对于约1000和约800℃的阻挡层厚度，基底阻挡退火温度为约700℃。 阻挡层厚度为800或更厚。 形成第一电极，随后是BST介电层和第二电极。 还公开了其中TiN阻挡层夹在两层铂之间的底部电极结构。 该工艺和结构也与其他电容器电介质（包括铁电锶钽酸锶）等产生良好的结果。

公开(公告)号：US06756621B2

公开(公告)日：2004-06-29

申请号：US10330160

申请日：2002-12-30

申请人： Toru Nasu ,  Shinichiro Hayashi

发明人： Toru Nasu ,  Shinichiro Hayashi

IPC分类号： H01L31119

CPC分类号： H01L28/56

摘要： The ferroelectric capacitor device includes a bottom electrode, a capacitor insulating film formed of a ferroelectric film, and a top electrode. The ferroelectric film has a bismuth layer structure including a plurality of bismuth oxide layers and a plurality of perovskite-like layers alternately put on top of each other. The plurality of bismuth oxide layers are formed of Bi2O2, and the plurality of perovskite-like layers include two or more kinds of layers represented by a general formula: Am−1BmO3m+&agr; (where A is a univalent, divalent or trivalent metal, B is a tetravalent, pentavalent or hexavalent metal, m is an integer equal to or more than 1, at least one of A being Bi if m is an integer of 2 or more, and 0≦&agr;≦1) and different in the value of m.

摘要翻译： 铁电电容器装置包括底电极，由铁电体膜形成的电容绝缘膜和顶电极。 铁电体膜具有包括多个氧化铋层和交替放置在彼此顶部的多个钙钛矿层的铋层结构。 多个氧化铋层由Bi 2 O 2形成，多个钙钛矿层包含由以下通式表示的两种或更多种层：Am-1BmO3m +α（其中A为一价，二价或三价金属，B 是四价，五价或六价金属，m是等于或大于1的整数，如果m是2或更大的整数，并且0≤α≤1，则A中的至少一个是Bi，并且在 值m。

公开(公告)号：US20090117898A1

公开(公告)日：2009-05-07

申请号：US12108047

申请日：2008-04-23

申请人： Atsuhiko Sato ,  Sadayoshi Kiyo ,  Shinichiro Hayashi

发明人： Atsuhiko Sato ,  Sadayoshi Kiyo ,  Shinichiro Hayashi

IPC分类号： H04W4/00

CPC分类号： H04W72/005 ,  H04W4/12 ,  H04W68/00

摘要： Problems can be solved by a base station to which a location of a mobile station is registered and which performs a radio communication with the MS, and when receiving distribution information, divides the distribution information into N pieces, and incorporates the divided distribution information in N pieces of reception channels to successively transmit them to the MS. It can be achieved by a MS which is in a waiting state of a BS and which performs a radio communication with the BS, and when receiving distribution information which is incorporated in reception channels and divided, stores the distribution information, and when determining completion of the distribution of the distribution information, constructs the N pieces of divided information and displays it.

摘要翻译： 可以通过登记有移动站的位置并与MS进行无线通信的基站来解决问题，并且当接收到分发信息时，将分发信息划分为N个部分，并将划分的分发信息合并在N中 接收信道，连续发送给MS。 可以通过处于BS的等待状态并与BS进行无线通信的MS来实现，并且当接收到并入接收信道中的分配信息并被分割，存储分发信息时，以及当确定完成时 分发信息的分发，构建N条分割信息并显示。

公开(公告)号：US20070158715A1

公开(公告)日：2007-07-12

申请号：US11540761

申请日：2006-10-02

申请人： Shinichiro Hayashi

发明人： Shinichiro Hayashi

IPC分类号： H01L29/94

CPC分类号： H01L28/75 ,  H01L27/11507 ,  H01L28/56 ,  H01L28/65

摘要： In a ferroelectric capacitor comprising: a lower electrode; a ferroelectric film formed on the lower electrode; and an upper electrode formed on the ferroelectric film, variations in composition profile of elements constituting the ferroelectric film are 50% or lower in the thickness direction of the ferroelectric film, and the polarization switching time of the ferroelectric film is 1 μs or less.

摘要翻译： 在铁电电容器中，包括：下电极; 形成在下电极上的铁电膜; 并且形成在强电介质膜上的上电极，构成铁电体膜的元件的组成轮廓的变化在铁电体膜的厚度方向上为50％以下，强电介质膜的极化切换时间为1μ以下。

公开(公告)号：US20070065654A1

公开(公告)日：2007-03-22

申请号：US11603794

申请日：2006-11-22

申请人： Shinichiro Hayashi ,  Ryuzo Yamamoto

发明人： Shinichiro Hayashi ,  Ryuzo Yamamoto

IPC分类号： B32B3/06

CPC分类号： B43L19/0025 ,  Y10T428/249953 ,  Y10T428/249954 ,  Y10T428/249955 ,  Y10T428/249958 ,  Y10T428/249978 ,  Y10T428/249979 ,  Y10T428/249981 ,  Y10T428/249986 ,  Y10T428/249991 ,  Y10T428/249992 ,  Y10T428/249993

摘要： An eraser is constituted by an elastic material containing a rubber component or a resin component, and a skeleton structure for reinforcing the elastic material, and the skeleton structure is made from a porous structural material such as from an organic polymer that is broken when rubbed. Void portions in the porous structural material of the skeleton structure contain the elastic material of the eraser composition. Here, the skeleton portions of the skeleton structure may have an average thickness of 1 to 100 μm, and the void portions may have an average pore size of 10 μm to 3 mm. The eraser may have a surface hardness of 50 to 80, and also a sticking strength of 1.5 to 20 (kgf).

摘要翻译： 橡皮擦由包含橡胶组分或树脂组分的弹性材料和用于增强弹性材料的骨架结构构成，并且骨架结构由诸如由摩擦破裂的有机聚合物的多孔结构材料制成。 骨架结构的多孔结构材料中的空隙部分含有橡皮擦组合物的弹性材料。 这里，骨架结构的骨架部的平均厚度可以为1〜100μm，空隙部的平均孔径可以为10μm〜3mm。 橡皮擦的表面硬度可以为50〜80，粘着强度为1.5〜20（kgf）。

公开(公告)号：US07134196B2

公开(公告)日：2006-11-14

申请号：US10812017

申请日：2004-03-30

申请人： Bunji Moriya ,  Seiichi Tajima ,  Fumikachi Kurosawa ,  Shinichiro Hayashi

发明人： Bunji Moriya ,  Seiichi Tajima ,  Fumikachi Kurosawa ,  Shinichiro Hayashi

IPC分类号： H05K3/30

CPC分类号： H01L23/3121 ,  C25D5/10 ,  C25D17/28 ,  H01L21/56 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/97 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/45124 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/15151 ,  H05K3/284 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49146 ,  H01L2224/81 ,  H01L2224/48 ,  H01L2224/05644

摘要： In a method of manufacturing an electronic device, an electronic component and a mount substrate are disposed such that one of surfaces of the electronic component faces toward one of surfaces of the mount substrate, and a connection electrode of the electronic component is electrically connected and mechanically bond to a patterned conductor of the mount substrate. A resin film is then disposed on the electronic component and the mount substrate. A gas captured in between the resin film and the electronic component is sucked through a hole provided in the mount substrate from a side of the mount substrate opposite to the electronic component. The resin film is thereby deformed to closely contact the electronic component and the mount substrate. The resin film is then heated and adhered to the mount substrate.