发明申请
- 专利标题： Magnetic memory adopting synthetic antiferromagnet as free magnetic layer
- 专利标题（中）： 磁记忆采用合成反铁磁体作为自由磁性层
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申请号： US11208370申请日： 2005-08-19
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公开(公告)号： US20060038213A1公开(公告)日： 2006-02-23
- 发明人: Kaoru Mori , Tetsuhiro Suzuki , Yoshiyuki Fukumoto , Sadahiko Miura
- 申请人： Kaoru Mori , Tetsuhiro Suzuki , Yoshiyuki Fukumoto , Sadahiko Miura
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP240046/2004 20040819
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N−1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N−1. The free magnetic layer is designed so that antiferromagnetic coupling(s) between the j-th and (j+1)-th ferromagnetic layers is stronger than that between the first and second ferromagnetic layers, j being any of integers ranging from 2 to N−2.
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