公开(公告)号：US20060038213A1

公开(公告)日：2006-02-23

申请号：US11208370

申请日：2005-08-19

申请人： Kaoru Mori ,  Tetsuhiro Suzuki ,  Yoshiyuki Fukumoto ,  Sadahiko Miura

发明人： Kaoru Mori ,  Tetsuhiro Suzuki ,  Yoshiyuki Fukumoto ,  Sadahiko Miura

IPC分类号： H01L29/94

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N−1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N−1. The free magnetic layer is designed so that antiferromagnetic coupling(s) between the j-th and (j+1)-th ferromagnetic layers is stronger than that between the first and second ferromagnetic layers, j being any of integers ranging from 2 to N−2.

摘要翻译： 磁存储器包括：包括自由磁性层的磁阻元件; 第一互连件，其在第一方向上倾斜于所述自由磁性层的容易轴线延伸; 沿与第一方向大致正交的第二方向延伸的第二互连; 以及写入电路，通过在所述第一互连上形成第一写入电流将数据写入所述自由磁性层，然后在所述第二互连上开启第二写入电流，所述第一写入电流导通。 自由磁性层包括：第一至第N铁磁层和N等于或大于4的第一至第（N-1）个非磁性层，第i个非磁性层设置在i 和第（i + 1）个铁磁层，其中i为等于或小于N-1的任意自然数。 自由磁性层被设计成使得第j和第（j + 1）个铁磁层之间的反铁磁耦合比第一和第二铁磁层之间的反铁磁耦合更强，j是从2到N的整数中的任何一个 -2。

公开(公告)号：US07242047B2

公开(公告)日：2007-07-10

申请号：US11208370

申请日：2005-08-19

申请人： Kaoru Mori ,  Tetsuhiro Suzuki ,  Yoshiyuki Fukumoto ,  Sadahiko Miura

发明人： Kaoru Mori ,  Tetsuhiro Suzuki ,  Yoshiyuki Fukumoto ,  Sadahiko Miura

IPC分类号： H01L29/76

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N−1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N−1. The free magnetic layer is designed so that antiferromagnetic coupling(s) between the j-th and (j+1)-th ferromagnetic layers is stronger than that between the first and second ferromagnetic layers, j being any of integers ranging from 2 to N−2.

摘要翻译： 磁存储器包括：包括自由磁性层的磁阻元件; 第一互连件，其在第一方向上倾斜于所述自由磁性层的容易轴线延伸; 沿与第一方向大致正交的第二方向延伸的第二互连; 以及写入电路，通过在所述第一互连上形成第一写入电流将数据写入所述自由磁性层，然后在所述第二互连上开启第二写入电流，所述第一写入电流导通。 自由磁性层包括：第一至第N铁磁层和N等于或大于4的第一至第（N-1）个非磁性层，第i个非磁性层设置在i 和第（i + 1）个铁磁层，其中i为等于或小于N-1的任意自然数。 自由磁性层被设计成使得第j和第（j + 1）个铁磁层之间的反铁磁耦合比第一和第二铁磁层之间的反铁磁耦合更强，j是从2到N的整数中的任何一个 -2。

公开(公告)号：US09379312B2

公开(公告)日：2016-06-28

申请号：US13518974

申请日：2010-12-14

申请人： Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

发明人： Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

IPC分类号： H01L29/82 ,  H01L43/02 ,  B82Y25/00 ,  G11C11/14 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  G11C19/08 ,  H01L27/22

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841 ,  G11C2213/74 ,  G11C2213/79 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

摘要翻译： 本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。 畴壁运动层由具有垂直磁各向异性的铁磁材料制成。 间隔层形成在畴壁运动层上，由非磁性材料制成。 参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。 畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。 畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值 。

公开(公告)号：US20130175645A1

公开(公告)日：2013-07-11

申请号：US13518974

申请日：2010-12-14

申请人： Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

发明人： Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

IPC分类号： H01L43/02

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841 ,  G11C2213/74 ,  G11C2213/79 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

摘要翻译： 本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。 畴壁运动层由具有垂直磁各向异性的铁磁材料制成。 间隔层形成在畴壁运动层上，由非磁性材料制成。 参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。 畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。 畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值 。

公开(公告)号：US07817462B2

公开(公告)日：2010-10-19

申请号：US11887631

申请日：2006-03-23

申请人： Sadahiko Miura ,  Tadahiko Sugibayashi ,  Tetsuhiro Suzuki

发明人： Sadahiko Miura ,  Tadahiko Sugibayashi ,  Tetsuhiro Suzuki

IPC分类号： G11C11/00

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： MRAM includes a first wiring, a second wiring, and a memory cell. The first wiring extends to a first direction, and the second wiring extends to a second direction. The memory cell includes a free magnetic layer in which a plurality of magnetic layers coupled anti-ferromagnetically through non-magnetic layers are laminated, and is provided at an intersection of the first and second wirings. The magnetization direction of the free magnetic layer is different from the first and second directions. The writing method includes (a) reading a first data stored in the memory cell; (b) comparing a second data to be written to the memory cell and the first data; and (c) changing a direction of a first write current supplied to the first wiring and a direction of the second write current to be supplied to the second wiring, when the first data and second data are different.

摘要翻译： MRAM包括第一布线，第二布线和存储单元。 第一布线延伸到第一方向，第二布线延伸到第二方向。 存储单元包括自由磁性层，其中层叠有反铁磁性地通过非磁性层耦合的多个磁性层，并且设置在第一和第二布线的交叉点。 自由磁性层的磁化方向与第一和第二方向不同。 写入方法包括（a）读取存储在存储单元中的第一数据; （b）将待写入的第二数据与所述第一数据进行比较; 以及（c）当第一数据和第二数据不同时，改变提供给第一布线的第一写入电流的方向和要提供给第二布线的第二写入电流的方向。

公开(公告)号：US20070019466A1

公开(公告)日：2007-01-25

申请号：US11380962

申请日：2006-05-01

申请人： Tetsuhiro Suzuki ,  Sadahiko Miura

发明人： Tetsuhiro Suzuki ,  Sadahiko Miura

IPC分类号： G11C11/14

CPC分类号： H01L27/222 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  H01L43/08

摘要： A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.

摘要翻译： 提供一种磁性随机存取存储器，包括基板，磁阻元件，其包括具有可逆自发磁化的铁磁层，该铁磁层根据自发磁化的方向而在电阻上变化，并且形成在基板上方，并且延伸 在第一方向上用于产生电流以产生要施加到磁阻元件的磁场。 所述布线形成为穿过比所述磁阻元件更靠近所述基板的第一位置，并且当从垂直于所述基板的主表面的方向观察时不与所述磁阻元件重叠，并且所述第二位置在所述 磁阻元件

公开(公告)号：US07254054B2

公开(公告)日：2007-08-07

申请号：US11380962

申请日：2006-05-01

申请人： Tetsuhiro Suzuki ,  Sadahiko Miura

发明人： Tetsuhiro Suzuki ,  Sadahiko Miura

IPC分类号： G11C11/00

CPC分类号： H01L27/222 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  H01L43/08

摘要： A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.

摘要翻译： 提供一种磁性随机存取存储器，包括基板，磁阻元件，其包括具有可逆自发磁化的铁磁层，该铁磁层根据自发磁化的方向而在电阻上变化，并且形成在基板上方，并且延伸 在第一方向上用于产生电流以产生要施加到磁阻元件的磁场。 所述布线形成为穿过比所述磁阻元件更靠近所述基板的第一位置，并且当从垂直于所述基板的主表面的方向观察时不与所述磁阻元件重叠，并且所述第二位置在所述 磁阻元件

公开(公告)号：US07064974B2

公开(公告)日：2006-06-20

申请号：US10659437

申请日：2003-09-11

申请人： Tetsuhiro Suzuki ,  Sadahiko Miura

发明人： Tetsuhiro Suzuki ,  Sadahiko Miura

IPC分类号： G11C11/00

CPC分类号： H01L27/222 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  H01L43/08

摘要： A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.

摘要翻译： 提供一种磁性随机存取存储器，包括基板，磁阻元件，其包括具有可逆自发磁化的铁磁层，该铁磁层根据自发磁化的方向而在电阻上变化，并且形成在基板上方，并且延伸 在第一方向上用于产生电流以产生要施加到磁阻元件的磁场。 所述布线形成为穿过比所述磁阻元件更靠近所述基板的第一位置，并且当从垂直于所述基板的主表面的方向观察时不与所述磁阻元件重叠，并且所述第二位置在所述 磁阻元件

公开(公告)号：US20090141540A1

公开(公告)日：2009-06-04

申请号：US11887631

申请日：2006-03-23

申请人： Sadahiko Miura ,  Tadahiko Sugibayashi ,  Tetsuhiro Suzuki

发明人： Sadahiko Miura ,  Tadahiko Sugibayashi ,  Tetsuhiro Suzuki

IPC分类号： G11C11/02 ,  G11C11/14 ,  G11C11/416

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： MRAM includes a first wiring, a second wiring, and a memory cell. The first wiring extends to a first direction, and the second wiring extends to a second direction. The memory cell includes a free magnetic layer in which a plurality of magnetic layers coupled anti-ferromagnetically through non-magnetic layers are laminated, and is provided at an intersection of the first and second wirings. The magnetization direction of the free magnetic layer is different from the first and second directions. The writing method includes (a) reading a first data stored in the memory cell; (b) comparing a second data to be written to the memory cell and the first data; and (c) changing a direction of a first write current supplied to the first wiring and a direction of the second write current to be supplied to the second wiring, when the first data and second data are different.

摘要翻译： MRAM包括第一布线，第二布线和存储单元。 第一布线延伸到第一方向，第二布线延伸到第二方向。 存储单元包括自由磁性层，其中层叠有反铁磁性地通过非磁性层耦合的多个磁性层，并且设置在第一和第二布线的交叉点。 自由磁性层的磁化方向与第一和第二方向不同。 写入方法包括（a）读取存储在存储单元中的第一数据; （b）将待写入的第二数据与所述第一数据进行比较; 以及（c）当第一数据和第二数据不同时，改变提供给第一布线的第一写入电流的方向和要提供给第二布线的第二写入电流的方向。

公开(公告)号：US20080164502A1

公开(公告)日：2008-07-10

申请号：US11667834

申请日：2005-11-16

申请人： Yoshiyuki Fukumoto ,  Tetsuhiro Suzuki ,  Katsumi Suemitsu

发明人： Yoshiyuki Fukumoto ,  Tetsuhiro Suzuki ,  Katsumi Suemitsu

IPC分类号： H01L27/00

CPC分类号： H01L27/222 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： The present invention to provide a new technique to reduce a variation in switching field of a magnetization free layer in a magnetic memory. The magnetic memory according to the present invention includes a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is positive; and a stress inducing structure configured to apply a tensile stress to said magnetization free layer in a same direction as the first direction.

摘要翻译： 本发明提供一种减小磁存储器中的无磁化层的开关场变化的新技术。 根据本发明的磁存储器包括具有在第一方向上具有形状磁各向异性的铁磁层和磁应变常数为正的铁磁层的无磁化层; 以及构造成在与第一方向相同的方向上对所述无磁化层施加拉伸应力的应力诱导结构。