利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

19 records (took 0.014 seconds)

    Process for producing polyradical compound and battery cell
    1.
    发明授权
    Process for producing polyradical compound and battery cell 有权
    生产多元化合物和电池的方法

    公开(公告)号：US08728662B2

    公开(公告)日：2014-05-20

    申请号：US12303592

    申请日：2007-06-04

    Applicant: Masahiro Suguro ,  Shigeyuki Iwasa ,  Yuki Kusachi ,  Jiro Iriyama ,  Yukiko Morioka ,  Kentaro Nakahara ,  Sadahiko Miura

    Inventor： Masahiro Suguro ,  Shigeyuki Iwasa ,  Yuki Kusachi ,  Jiro Iriyama ,  Yukiko Morioka ,  Kentaro Nakahara ,  Sadahiko Miura

    IPC: H01M4/13 ,  H01M4/62 ,  C08F26/06

    CPC classification number: H01M4/60 ,  C08F216/125 ,  C08F216/1458 ,  H01M4/602

    Abstract: Disclosed is a polyradical compound which can be used as an electrode active material for at least one of a positive electrode and a negative electrode. The polyradical compound has a repeating unit represented by general formula (1) and is crosslinked using a bifunctional crosslinking agent having two polymerizing groups in the molecule represented by general formula (2), wherein R1 to R3 each independently represent hydrogen or methyl group; R4 to R7 each independently represent C1 to C3 alkyl group; X represents single bond, linear, branched or cyclic C1 to C15 alkylenedioxy group, alkylene group, phenylenedioxy group, phenylene group or structure represented by general formula (3); and R8 to R13 each independently represent hydrogen or methyl group, and k represents an integer of 2 to 5.

    Abstract translation: 公开了可用作正电极和负电极中的至少一种的电极活性材料的多元化合物。 多元化合物具有由通式（1）表示的重复单元，并且使用在通式（2）表示的分子中具有两个聚合基团的双官能交联剂进行交联，其中R 1至R 3各自独立地表示氢或甲基; R4至R7各自独立地表示C1至C3烷基; X表示单键，直链，支链或环状的C1至C15亚烷基二氧基，亚烷基，亚苯基二氧基，亚苯基或由通式（3）表示的结构; R 8〜R 13各自独立地表示氢或甲基，k表示2〜5的整数。

    Magnetic memory adopting synthetic antiferromagnet as free magnetic layer
    2.
    发明授权
    Magnetic memory adopting synthetic antiferromagnet as free magnetic layer 有权
    磁记忆采用合成反铁磁体作为自由磁性层

    公开(公告)号：US07242047B2

    公开(公告)日：2007-07-10

    申请号：US11208370

    申请日：2005-08-19

    Applicant: Kaoru Mori ,  Tetsuhiro Suzuki ,  Yoshiyuki Fukumoto ,  Sadahiko Miura

    Inventor： Kaoru Mori ,  Tetsuhiro Suzuki ,  Yoshiyuki Fukumoto ,  Sadahiko Miura

    IPC: H01L29/76

    CPC classification number: G11C11/16 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

    Abstract: A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N−1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N−1. The free magnetic layer is designed so that antiferromagnetic coupling(s) between the j-th and (j+1)-th ferromagnetic layers is stronger than that between the first and second ferromagnetic layers, j being any of integers ranging from 2 to N−2.

    Abstract translation: 磁存储器包括：包括自由磁性层的磁阻元件; 第一互连件，其在第一方向上倾斜于所述自由磁性层的容易轴线延伸; 沿与第一方向大致正交的第二方向延伸的第二互连; 以及写入电路，通过在所述第一互连上形成第一写入电流将数据写入所述自由磁性层，然后在所述第二互连上开启第二写入电流，所述第一写入电流导通。 自由磁性层包括：第一至第N铁磁层和N等于或大于4的第一至第（N-1）个非磁性层，第i个非磁性层设置在i 和第（i + 1）个铁磁层，其中i为等于或小于N-1的任意自然数。 自由磁性层被设计成使得第j和第（j + 1）个铁磁层之间的反铁磁耦合比第一和第二铁磁层之间的反铁磁耦合更强，j是从2到N的整数中的任何一个 -2。

    Magnetic memory, and its operating method
    3.
    发明授权
    Magnetic memory, and its operating method 有权
    磁记忆体及其操作方法

    公开(公告)号：US07177179B2

    公开(公告)日：2007-02-13

    申请号：US10512545

    申请日：2003-04-21

    Applicant: Sadahiko Miura ,  Tadahiko Sugibayashi ,  Hideaki Numata ,  Kiyotaka Tsuji

    Inventor： Sadahiko Miura ,  Tadahiko Sugibayashi ,  Hideaki Numata ,  Kiyotaka Tsuji

    IPC: G11C11/14

    CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/16

    Abstract: A technology for eliminating the defects in a tunnel insulation film of magnetic tunnel junction and for suppressing generation of a defective bit in an MRAM using magnetic tunnel junction in a memory. The magnetic memory includes a substrate, an interlayer insulation film covering the upper surface side of the substrate, memory cells, and plugs penetrating the interlayer insulation film. The memory cell includes a first magnetic layer formed on the upper surface side of the interlayer insulation film, a tunnel insulation layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel insulation layer. The plug is connected electrically with the first magnetic layer. The tunnel current passing part of the tunnel insulation layer located between the first and second magnetic layers is arranged, at least partially, so as not to overlap the plug in the direction perpendicular to the surface of the substrate.

    Abstract translation: 一种用于消除磁隧道结隧道绝缘膜中的缺陷并用于抑制在存储器中使用磁性隧道结的MRAM中的有缺陷位的产生的技术。 磁性存储器包括基板，覆盖基板的上表面侧的层间绝缘膜，存储单元和穿透层间绝缘膜的插塞。 存储单元包括形成在层间绝缘膜的上表面侧的第一磁性层，形成在第一磁性层上的隧道绝缘层和形成在隧道绝缘层上的第二磁性层。 插头与第一磁性层电连接。 位于第一和第二磁性层之间的隧道绝缘层的隧道电流通过部分被布置成至少部分地不与垂直于衬底的表面的方向上的插塞重叠。

    Magnetic random access memory and method for manufacturing the same
    4.
    发明授权
    Magnetic random access memory and method for manufacturing the same 有权
    磁性随机存取存储器及其制造方法

    公开(公告)号：US07064974B2

    公开(公告)日：2006-06-20

    申请号：US10659437

    申请日：2003-09-11

    Applicant: Tetsuhiro Suzuki ,  Sadahiko Miura

    Inventor： Tetsuhiro Suzuki ,  Sadahiko Miura

    IPC: G11C11/00

    CPC classification number: H01L27/222 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  H01L43/08

    Abstract: A magnetic random access memory is provided including a substrate, a magnetoresistance element which includes a ferromagnetic layer having an invertible spontaneous magnetization, which varies in resistance according to the direction of the spontaneous magnetization, and is formed above the substrate, and a wiring which extends in a first direction and is used for making an electric current flow to generate a magnetic field to be applied to the magnetoresistance element. The wiring is formed so as to pass through a first position which is closer to the substrate than the magnetoresistance element and does not overlap the magnetoresistance element when viewed from a direction perpendicular to the main surface of the substrate, and a second position being above said magnetoresistance element.

    Abstract translation: 提供一种磁性随机存取存储器，包括基板，磁阻元件，其包括具有可逆自发磁化的铁磁层，该铁磁层根据自发磁化的方向而在电阻上变化，并且形成在基板上方，并且延伸 在第一方向上用于产生电流以产生要施加到磁阻元件的磁场。 所述布线形成为穿过比所述磁阻元件更靠近所述基板的第一位置，并且当从垂直于所述基板的主表面的方向观察时不与所述磁阻元件重叠，并且所述第二位置在所述 磁阻元件

    Superconducting transmission line phase shifter having a V.sub.3 Si superconductive signal line
    5.
    发明授权
    Superconducting transmission line phase shifter having a V.sub.3 Si superconductive signal line 失效
    具有V3Si超导信号线的超导传输线移相器

    公开(公告)号：US6014575A

    公开(公告)日：2000-01-11

    申请号：US548985

    申请日：1995-10-27

    Applicant: Sadahiko Miura

    Inventor： Sadahiko Miura

    IPC: H01L39/22 ,  H01P1/18 ,  H01P9/00 ,  H01B12/02

    CPC classification number: H01P1/181 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

    Abstract: The present invention provides a superconducting transmission delay line phase shifter which has an essential structure as follows. The superconducting transmission delay line phase shifter has a layer made of a material showing a low dielectric loss the layer comprising first, second and third sections, wherein the second section being positioned between the first and third sections. The superconducting transmission delay line phase shifter also has a ferroelectric selectively provided in the second section. The ferroelectric extends between boundaries of the second section to the first and third sections. The superconducting transmission delay line phase shifter also has a thin film made of a conductor having a high conductivity. The conductive thin film extends across the bottoms of the first, second and third sections. The superconducting transmission delay line phase shifter also has a superconducting signal transmission line, on which signals are transmitted. The superconducting signal transmission line comprises a signal input section, a phase shifting section jointed with the signal input section where transmission signals show phase shift in the phase shifting section, and a signal output section connected to the phase shifting section. The signal input section is at least in contact with the first section and the signal input section is level in relation to the top of the first section. The signal output section is at least in contact with the third section and the signal output section is level in relation to the top of the third section. The phase shifting section is at least in contact with the ferroelectric and the phase shifting section is level in relation to the top of the ferroelectric.

    Abstract translation: 本发明提供一种具有以下基本结构的超导传输延迟线移相器。 超导传输延迟线移相器具有由表示低介电损耗的材料制成的层，该层包括第一，第二和第三部分，其中第二部分位于第一和第三部分之间。 超导传输延迟线移相器还具有选择性地设置在第二部分中的铁电体。 铁电体在第二部分的边界与第一和第三部分之间延伸。 超导传输延迟线移相器还具有由具有高导电性的导体制成的薄膜。 导电薄膜延伸穿过第一，第二和第三部分的底部。 超导传输延迟线移相器还具有传输信号的超导信号传输线。 超导信号传输线包括信号输入部分，与信号输入部分连接的相移部分，其中传输信号示出相移部分中的相移，以及连接到相移部分的信号输出部分。 信号输入部分至少与第一部分接触，并且信号输入部分相对于第一部分的顶部是水平的。 信号输出部分至少与第三部分接触，并且信号输出部分相对于第三部分的顶部是等级的。 相移部分至少与铁电体接触，并且相移部分相对于铁电体的顶部是平坦的。

    Electronic device substrate using silicon semiconductor substrate
    6.
    发明授权
    Electronic device substrate using silicon semiconductor substrate 失效
    使用硅半导体衬底的电子器件衬底

    公开(公告)号：US5084438A

    公开(公告)日：1992-01-28

    申请号：US326783

    申请日：1989-03-21

    Applicant: Shogo Matsubara ,  Yoichi Miyasaka ,  Sadahiko Miura

    Inventor： Shogo Matsubara ,  Yoichi Miyasaka ,  Sadahiko Miura

    IPC: H01L39/24

    CPC classification number: H01L39/2461 ,  Y10S428/901 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/703 ,  Y10S505/704

    Abstract: An electronic device substrate includes a spinel epitaxial film formed on a silicon single-crystal substrate and an oxide superconductor layer formed on the spinel film. The oxide superconductor layer is represented by formula P.sub.x (Q,Ca).sub.y Cu.sub.z O.sub..delta. and contains at least one element of Bi and Tl as P and at least one element of Sr and Ba as Q. Composition ratios fall within ranges of 0.08.ltoreq.x/(x+y+z).ltoreq.0.41, 0.29.ltoreq.y/(x+y+z).ltoreq.0.47 and 1.ltoreq.Q/Ca.ltoreq.3.

    Abstract translation: 电子器件衬底包括形成在硅单晶衬底上的尖晶石外延膜和形成在尖晶石膜上的氧化物超导体层。 氧化物超导体层由式Px（Q，Ca）yCuzO delta表示，并且含有至少一种元素Bi和Tl作为P和至少一种元素Sr和Ba作为Q。组成比落在0.08 < x /（x + y + z）

    PROCESS FOR PRODUCING POLYRADICAL COMPOUND AND BATTERY CELL
    9.
    发明申请
    PROCESS FOR PRODUCING POLYRADICAL COMPOUND AND BATTERY CELL 有权
    生产多元化合物和电池的方法

    公开(公告)号：US20100255372A1

    公开(公告)日：2010-10-07

    申请号：US12303592

    申请日：2007-06-04

    Applicant: Masahiro Suguro ,  Shigeyuki Iwasa ,  Yuki Kusachi ,  Jiro Iriyama ,  Yukiko Morioka ,  Kentaro Nakahara ,  Sadahiko Miura

    Inventor： Masahiro Suguro ,  Shigeyuki Iwasa ,  Yuki Kusachi ,  Jiro Iriyama ,  Yukiko Morioka ,  Kentaro Nakahara ,  Sadahiko Miura

    IPC: H01M4/60 ,  C08F226/06

    CPC classification number: H01M4/60 ,  C08F216/125 ,  C08F216/1458 ,  H01M4/602

    Abstract: Disclosed is a polyradical compound which can be used as an electrode active material for at least one of a positive electrode and a negative electrode. The polyradical compound has a repeating unit represented by general formula (1) and is crosslinked using a bifunctional crosslinking agent having two polymerizing groups in the molecule represented by general formula (2), wherein R1 to R3 each independently represent hydrogen or methyl group; R4 to R7 each independently represent C1 to C3 alkyl group; X represents single bond, linear, branched or cyclic C1 to C15 alkylenedioxy group, alkylene group, phenylenedioxy group, phenylene group or structure represented by general formula (3); and R8 to R13 each independently represent hydrogen or methyl group, and k represents an integer of 2 to 5.

    Abstract translation: 公开了可用作正电极和负电极中的至少一种的电极活性材料的多元化合物。 多元化合物具有由通式（1）表示的重复单元，并且使用在通式（2）表示的分子中具有两个聚合基团的双官能交联剂进行交联，其中R 1至R 3各自独立地表示氢或甲基; R4至R7各自独立地表示C1至C3烷基; X表示单键，直链，支链或环状的C1至C15亚烷基二氧基，亚烷基，亚苯基二氧基，亚苯基或由通式（3）表示的结构; R 8〜R 13各自独立地表示氢或甲基，k表示2〜5的整数。

Patent Agency Ranking