发明申请
US20060049390A1 Resistively switching nonvolatile memory cell based on alkali metal ion drift
审中-公开
基于碱金属离子漂移电阻开关非易失性存储单元
- 专利标题： Resistively switching nonvolatile memory cell based on alkali metal ion drift
- 专利标题（中）： 基于碱金属离子漂移电阻开关非易失性存储单元
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申请号： US11209026申请日： 2005-08-23
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公开(公告)号： US20060049390A1公开(公告)日： 2006-03-09
- 发明人: Klaus Ufert , Cay-Uwe Pinnow , Thomas Happ
- 申请人： Klaus Ufert , Cay-Uwe Pinnow , Thomas Happ
- 优先权： DE102004040751.7 20040823
- 主分类号： H01L47/00
- IPC分类号： H01L47/00
摘要：
A nonvolatile, resistively switching memory cell includes a layer arranged between a first electrode and a second electrode. The layer includes one or more chalcogenide compound(s) selected from the group consisting of CuInS, CuInSe, CdInS, CdInSe, ZnInS, MnInS, MnZnInS, ZnInSe, InS, InSSe and InSe, with alkali metal or alkaline-earth metal ions contained in the layer of the chalcogenide compound(s).
公开/授权文献
- US1706102A Bolt 公开/授权日：1929-03-19
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