CBRAM cell with a reversible conductive bridging mechanism
    2.
    发明申请
    CBRAM cell with a reversible conductive bridging mechanism 审中-公开
    具有可逆导电桥接机构的CBRAM单元

    公开(公告)号:US20070274120A1

    公开(公告)日:2007-11-29

    申请号:US11051483

    申请日:2005-02-07

    IPC分类号: G11C11/00

    摘要: According to the invention CBRAM cell is provided exhibiting a resistive switching effect offering the possibility to store multiple memory states in one cell by programming said memory cell to different resistance levels including at least a first memory state with a high resistance level representing a low-conductivity state of the memory cell and one memory state with a low resistance level representing a high-conductivity state of the memory cell, wherein the resistive switching effect is substantially based on a variation of the concentration of the metallic material incorporated or deposited in the matrix host material.

    摘要翻译: 根据本发明,提供具有电阻切换效果的CBRAM单元,其提供通过将所述存储器单元编程为不同的电阻电平来存储多个存储器状态的可能性,所述电阻级别至少包括表示低电导率的高电阻电平的第一存储器状态 存储单元的状态和表示存储单元的高导电性状态的低电阻水平的一个存储器状态,其中电阻切换效应基本上基于结合或沉积在矩阵主体中的金属材料的浓度的变化 材料。

    Method for manufacturing resistively switching memory devices
    3.
    发明申请
    Method for manufacturing resistively switching memory devices 失效
    用于制造电阻式切换存储器件的方法

    公开(公告)号:US20050250281A1

    公开(公告)日:2005-11-10

    申请号:US11113332

    申请日:2005-04-25

    摘要: The present invention relates to a reproducible conditioning during the manufacturing of a resistively switching CBRAM memory cell comprising a first electrode and a second electrode with an active material positioned therebetween. The active material is adapted to be placed in a more or less electroconductive state by means of electrochemical switching processes. A CBRAM memory cell manufactured pursuant to the method according to the invention has, due to the improved conditioning, more reliable and more distinctly evaluable electrical switching properties. Moreover, no more forming step is necessary with the method according to the present invention.

    摘要翻译: 本发明涉及在制造电阻切换CBRAM存储单元期间的可再现调节,其包括第一电极和位于其间的活性材料的第二电极。 活性材料适于通过电化学切换工艺置于或多或少的导电状态。 根据本发明的方法制造的CBRAM存储单元由于改进的调理,具有更可靠和更明显的可评估电开关特性。 此外,根据本发明的方法不需要更多的成型步骤。

    Sputter deposition method for forming integrated circuit
    4.
    发明授权
    Sputter deposition method for forming integrated circuit 有权
    用于形成集成电路的溅射沉积方法

    公开(公告)号:US08038850B2

    公开(公告)日:2011-10-18

    申请号:US11473441

    申请日:2006-06-23

    申请人: Klaus Ufert

    发明人: Klaus Ufert

    IPC分类号: C23C14/35

    摘要: A sputter deposition apparatus and method, and a substrate holder for use with a sputter deposition apparatus is disclosed. According to one embodiment of the invention, a sputter deposition apparatus is provided, including at least one sputter target, a first plasma, a substrate holder, and a further plasma. In one embodiment, the further plasma is an ECWR plasma. According to an additional embodiment of the invention, an anode is provided between the further plasma, and the substrate holder. According to a further embodiment, the substrate holder includes a dielectric layer with varying thickness.

    摘要翻译: 公开了溅射沉积设备和方法以及与溅射沉积设备一起使用的衬底保持器。 根据本发明的一个实施例,提供溅射沉积设备,其包括至少一个溅射靶,第一等离子体,衬底保持器和另外的等离子体。 在一个实施例中,另外的等离子体是ECWR等离子体。 根据本发明的另一实施例,阳极设置在另外的等离子体和衬底保持器之间。 根据另一实施例,衬底保持器包括具有变化厚度的电介质层。

    Increased Switching Cycle Resistive Memory Element
    6.
    发明申请
    Increased Switching Cycle Resistive Memory Element 有权
    增加开关周期电阻的存储元件

    公开(公告)号:US20090027944A1

    公开(公告)日:2009-01-29

    申请号:US11782525

    申请日:2007-07-24

    申请人: Klaus Ufert

    发明人: Klaus Ufert

    IPC分类号: G11C11/00 H01L21/328

    摘要: An integrated circuit including a resistive memory element and a method of manufacturing the integrated circuit are described. The method of manufacturing the integrated circuit includes depositing a switching layer material and intentionally forming inhomogeneously distributed defects within the switching layer material to increase a number of switching cycles of the resistive memory element. The resistive memory element includes a switching layer that selectively switches between a low resistance state and a high resistance state. The switching layer contains intentionally formed defects that increase the number of switching cycles of the switching layer.

    摘要翻译: 描述了包括电阻性存储元件的集成电路和制造集成电路的方法。 集成电路的制造方法包括沉积切换层材料并有意在开关层材料内形成非均匀分布的缺陷以增加电阻式存储元件的开关次数。 电阻性存储元件包括选择性地在低电阻状态和高电阻状态之间切换的开关层。 开关层包含有意形成的缺陷,其增加了开关层的开关周期数。

    Increased switching cycle resistive memory element
    7.
    发明授权
    Increased switching cycle resistive memory element 有权
    增加开关周期电阻性存储元件

    公开(公告)号:US07881092B2

    公开(公告)日:2011-02-01

    申请号:US11782525

    申请日:2007-07-24

    申请人: Klaus Ufert

    发明人: Klaus Ufert

    IPC分类号: G11C11/00

    摘要: An integrated circuit including a resistive memory element and a method of manufacturing the integrated circuit are described. The method of manufacturing the integrated circuit includes depositing a switching layer material and intentionally forming inhomogeneously distributed defects within the switching layer material to increase a number of switching cycles of the resistive memory element. The resistive memory element includes a switching layer that selectively switches between a low resistance state and a high resistance state. The switching layer contains intentionally formed defects that increase the number of switching cycles of the switching layer.

    摘要翻译: 描述了包括电阻性存储元件的集成电路和制造集成电路的方法。 集成电路的制造方法包括沉积切换层材料并有意在开关层材料内形成非均匀分布的缺陷以增加电阻式存储元件的开关次数。 电阻性存储元件包括选择性地在低电阻状态和高电阻状态之间切换的开关层。 开关层包含有意形成的缺陷,其增加了开关层的开关周期数。

    Opto-electronic memory element on the basis of organic metalloporphyrin molecules
    9.
    发明授权
    Opto-electronic memory element on the basis of organic metalloporphyrin molecules 有权
    基于有机金属卟啉分子的光电记忆元件

    公开(公告)号:US07265381B2

    公开(公告)日:2007-09-04

    申请号:US11024932

    申请日:2004-12-30

    申请人: Klaus Ufert

    发明人: Klaus Ufert

    IPC分类号: H01L29/10

    摘要: A memory cell for opto-electronic applications includes a substrate, a first electrode and a second electrode, and an active layer arranged between the first and the second electrodes, wherein the active layer includes a metalloporphyrin derivative, and wherein the second electrode is transparent and includes ZnO, which is doped with B, Al, Ga, or Mg.

    摘要翻译: 用于光电应用的存储单元包括衬底,第一电极和第二电极以及布置在第一和第二电极之间的有源层,其中有源层包括金属卟啉衍生物,并且其中第二电极是透明的, 包括掺杂有B,Al,Ga或Mg的ZnO。

    Opto-electronic memory element on the basis of organic metalloporphyrin molecules
    10.
    发明申请
    Opto-electronic memory element on the basis of organic metalloporphyrin molecules 有权
    基于有机金属卟啉分子的光电记忆元件

    公开(公告)号:US20060145181A1

    公开(公告)日:2006-07-06

    申请号:US11024932

    申请日:2004-12-30

    申请人: Klaus Ufert

    发明人: Klaus Ufert

    IPC分类号: H01L33/00

    摘要: A memory cell for opto-electronic applications includes a substrate, a first electrode and a second electrode, and an active layer arranged between the first and the second electrodes, wherein the active layer includes a metalloporphyrin derivative, and wherein the second electrode is transparent and includes ZnO, which is doped with B, Al, Ga, or Mg.

    摘要翻译: 用于光电应用的存储单元包括衬底,第一电极和第二电极以及布置在第一和第二电极之间的有源层,其中有源层包括金属卟啉衍生物,并且其中第二电极是透明的, 包括掺杂有B,Al,Ga或Mg的ZnO。