发明申请
- 专利标题： Semiconductor device and process for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11260197申请日： 2005-10-28
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公开(公告)号： US20060054944A1公开(公告)日： 2006-03-16
- 发明人: Haruyuki Sorada , Takeshi Takagi , Akira Asai , Akira Inoue
- 申请人： Haruyuki Sorada , Takeshi Takagi , Akira Asai , Akira Inoue
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 优先权： JP2003-4471 20030110
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
The present invention provides a semiconductor device comprising: a semiconductor layer (3); a gate electrode (11) formed on the semiconductor layer (3) via a gate insulation film (10); and a first insulation film (13) formed at one or more of sidewalls of the semiconductor layer (3), the gate insulation film (10) and the gate electrode (11); wherein the first insulation film (13) overlies a part of the gate insulation film (10) surface. According to the semiconductor device, leakage current at the isolation edge can be suppressed and thus reliability can be improved.
公开/授权文献
- US07235830B2 Semiconductor device and process for manufacturing the same 公开/授权日：2007-06-26
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