发明申请
- 专利标题: Semiconductor device and process for producing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US10530730申请日: 2003-10-20
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公开(公告)号: US20060099725A1公开(公告)日: 2006-05-11
- 发明人: Yoshimi Shioya , Yuhko Nishimoto , Kazuo Maeda
- 申请人: Yoshimi Shioya , Yuhko Nishimoto , Kazuo Maeda
- 优先权: JP2002-310113 20021024; JP2003-010026 20030117
- 国际申请: PCT/JP03/13410 WO 20031020
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 group to 4 or more and adjusting a gas pressure to 1.5 Torr or more, applying a power to the film forming gas to generate a plasma thereof so as to react it, and thus forming a low-dielectric insulating film (62) on a substrate (61), plasmanizing a process gas containing at least any one of He, Ar, H2 or deuterium, and bringing the low-dielectric insulating film (62) into contact with the plasma of the process gas.
公开/授权文献
- US07329612B2 Semiconductor device and process for producing the same 公开/授权日:2008-02-12