公开(公告)号：US06649495B2

公开(公告)日：2003-11-18

申请号：US10164709

申请日：2002-06-10

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda

IPC分类号： H01L2120

CPC分类号： H01L21/76834 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76807 ,  H01L2221/1036

摘要： The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated. Its constitution includes the steps of: forming the barrier insulating film 35a on a substrate 21 subject to deposition, in which an electric power having a first frequency (f1) is applied to a first film forming gas containing at least silicon-containing gas and oxygen-containing gas to transform said first film forming gas into plasma and to cause reaction; and forming the main insulating film 35b having low relative dielectric constant on the barrier insulating film 35a, in which an electric power having a second frequency (f2) higher than the first frequency (f1) is applied to a second film forming gas containing at least the silicon-containing gas and the oxygen-containing gas to transform the second film forming gas into plasma and to cause reaction.

摘要翻译： 半导体器件的制造方法技术领域本发明涉及一种半导体器件的制造方法，其中，在主要由铜膜构成的布线被涂覆的同时依次形成具有低相对介电常数的阻挡绝缘膜和主绝缘膜。 其结构包括以下步骤：在沉积的基板21上形成阻挡绝缘膜35a，其中具有第一频率（f1）的电力施加到至少含有含硅气体和氧气的第一成膜气体 以将所述第一成膜气体转化为等离子体并引起反应; 并且在隔离绝缘膜35a上形成具有低相对介电常数的主绝缘膜35b，其中具有比第一频率（f1）高的第二频率（f2）的电力施加到至少包含至少 含硅气体和含氧气体，以将第二成膜气体转化为等离子体并引起反应。

公开(公告)号：US06780790B2

公开(公告)日：2004-08-24

申请号：US10287549

申请日：2002-11-05

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Kazuo Maeda

IPC分类号： H01L21469

CPC分类号： H01L21/02126 ,  C23C16/308 ,  C23C16/401 ,  C23C16/455 ,  C23C16/45557 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/31633 ,  H01L21/76828 ,  H01L21/76834

摘要： A semiconductor device having a barrier insulating film covering a copper wiring is formed by a plasma enhanced CVD method. The method includes supplying high frequency power of a frequency of 1 MHz or more to a first electrode, and holding a substrate on which copper wiring is formed on a second electrode facing the first electrode; supplying a film forming gas containing an alkyl compound and an oxygen-containing gas between the first and second electrodes while regulating gas pressure of the film forming gas to 1 Torr or less; and supplying high frequency power to either of the first and second electrodes to convert the film forming gas into a plasma, and allowing the alkyl compound and the oxygen-containing gas of the film forming gas to react to form a barrier insulating film covering the surface of the substrate.

摘要翻译： 通过等离子体增强CVD法形成具有覆盖铜布线的阻挡绝缘膜的半导体器件。 该方法包括向第一电极提供1MHz或更高频率的高频功率，并且在面向第一电极的第二电极上保持在其上形成有铜布线的基板; 在第一和第二电极之间提供含有烷基化合物和含氧气体的成膜气体，同时将成膜气体的气体压力调节至1托或更小; 并向第一和第二电极中的任一个提供高频电力，以将成膜气体转化为等离子体，并使成膜气体的烷基化合物和含氧气体反应，形成覆盖表面的阻挡绝缘膜 的基底。

公开(公告)号：US06713383B2

公开(公告)日：2004-03-30

申请号：US10207015

申请日：2002-07-30

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Shoji Ohgawara ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Shoji Ohgawara ,  Kazuo Maeda

IPC分类号： H01L214763

CPC分类号： H01L21/76838 ,  H01L21/318 ,  H01L21/321 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A surface of a copper (Cu) wiring layer formed over a semiconductor substrate is exposed to a plasma gas selected from the group consisting of an ammonia gas, a mixed gas of nitrogen and hydrogen, a CF4 gas, a C2F6 gas and a NF3 gas. The surface of the copper (Cu) wiring layer is then exposed to an atmosphere or a plasma of a gas selected from the group consisting of an ammonia gas, an ethylenediamine gas, a fÀ-diketone gas, a mixed gas consisting of the ammonia gas and a hydrocarbon gas (CxHy), and a mixed gas consisting of a nitrogen gas and the hydrocarbon gas (CxHy), and a Cu diffusion preventing insulating film is formed on the copper (Cu) wiring layer.

摘要翻译： 形成在半导体衬底上的铜（Cu）布线层的表面暴露于选自氨气，氮和氢的混合气体，CF4气体，C2F6气体和NF3气体中的等离子体气体 。 然后将铜（Cu）布线层的表面暴露于选自氨气，乙二胺气体，二 - 二酮气体，由氨气组成的混合气体的气体的气氛或等离子体 和烃气体（CxHy）以及由氮气和烃气体组成的混合气体（CxHy），在铜（Cu）配线层上形成Cu扩散防止绝缘膜。

公开(公告)号：US07329612B2

公开(公告)日：2008-02-12

申请号：US10530730

申请日：2003-10-20

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L23/53295 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 group to 4 or more and adjusting a gas pressure to 1.5 Torr or more, applying a power to the film forming gas to generate a plasma thereof so as to react it, and thus forming a low-dielectric insulating film (62) on a substrate (61), plasmanizing a process gas containing at least any one of He, Ar, H2 or deuterium, and bringing the low-dielectric insulating film (62) into contact with the plasma of the process gas.

摘要翻译： 通过以下步骤制造半导体器件：通过将H 2 O 2的流量比设定为具有硅氧烷键的含硅有机化合物和含硅的有机化合物中的任何一种来生成成膜气体 具有CH 3 3〜4以上的有机化合物，将气体压力调节至1.5Torr以上，向成膜气体施加电力，生成等离子体，使其反应， 在基板（61）上形成低介电绝缘膜（62），使包含He，Ar，H 2或氘中的至少任何一种的工艺气体均质化，并使低介电绝缘层 膜（62）与工艺气体的等离子体接触。

公开(公告)号：US20060099725A1

公开(公告)日：2006-05-11

申请号：US10530730

申请日：2003-10-20

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

IPC分类号： H01L21/00

CPC分类号： H01L23/53295 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 group to 4 or more and adjusting a gas pressure to 1.5 Torr or more, applying a power to the film forming gas to generate a plasma thereof so as to react it, and thus forming a low-dielectric insulating film (62) on a substrate (61), plasmanizing a process gas containing at least any one of He, Ar, H2 or deuterium, and bringing the low-dielectric insulating film (62) into contact with the plasma of the process gas.

摘要翻译： 通过以下步骤制造半导体器件：通过将H 2 O 2的流量比设定为具有硅氧烷键的含硅有机化合物和含硅的有机化合物中的任何一种来生成成膜气体 具有CH 3 3〜4以上的有机化合物，将气体压力调节至1.5Torr以上，向成膜气体施加电力，生成等离子体，使其反应， 在基板（61）上形成低介电绝缘膜（62），使包含He，Ar，H 2或氘中的至少任何一种的工艺气体均质化，并使低介电绝缘层 膜（62）与工艺气体的等离子体接触。

公开(公告)号：US06815824B2

公开(公告)日：2004-11-09

申请号：US10176588

申请日：2002-06-24

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura

IPC分类号： H01L23485

CPC分类号： H01L21/76832 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76834

摘要： The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. The barrier insulating film is a structure of two or more layers including at least a first barrier insulating film containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.

公开(公告)号：US06642157B2

公开(公告)日：2003-11-04

申请号：US09742242

申请日：2000-12-22

申请人： Yoshimi Shioya ,  Yuichiro Kotake ,  Youichi Yamamoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Shoji Ohgawara ,  Kouichi Ohira ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuichiro Kotake ,  Youichi Yamamoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Shoji Ohgawara ,  Kouichi Ohira ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02274 ,  C23C16/308 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/31116 ,  H01L21/3122 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31695 ,  H01L21/76802

摘要： There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.

摘要翻译： 提供了通过使具有硅氧烷键的化合物和氧化气体通过等离子体反应而在衬底103上形成含有硅的绝缘膜204的成膜方法。

公开(公告)号：US06630412B2

公开(公告)日：2003-10-07

申请号：US09897069

申请日：2001-07-03

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Youichi Yamamoto

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Youichi Yamamoto

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/308 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76834

摘要： In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react.

公开(公告)号：US06514855B1

公开(公告)日：2003-02-04

申请号：US09547852

申请日：2000-04-12

申请人： Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda ,  Yoshimi Shioya ,  Koichi Ohira

发明人： Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda ,  Yoshimi Shioya ,  Koichi Ohira

IPC分类号： H01L214763

CPC分类号： H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02321 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3145 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： The present invention relates to a semiconductor device manufacturing method for forming a via hole or a contact hole in an interlayer insulating film with a low dielectric constant. The method includes the steps of forming a nitrogen containing insulating film on a substrate, forming a porous insulating film on the nitrogen-containing insulating film, forming an opening in the underlying insulating film and the porous insulating film, and forming a nitrogen containing insulating film on the surface of the porous insulating film and on the surface of the opening by bringing these surfaces into contact with a plasma of any one of an ammonia gas, a nitrogen gas, and an oxygen nitride gas.

摘要翻译： 本发明涉及在具有低介电常数的层间绝缘膜中形成通孔或接触孔的半导体器件制造方法。 该方法包括在基板上形成含氮绝缘膜的步骤，在含氮绝缘膜上形成多孔绝缘膜，在下面的绝缘膜和多孔绝缘膜上形成开口，并形成含氮绝缘膜 通过使这些表面与氨气，氮气和氮氧化物气体中的任一种的等离子体接触，在多孔绝缘膜的表面上和开口的表面上。

公开(公告)号：US06479408B2

公开(公告)日：2002-11-12

申请号：US09843725

申请日：2001-04-30

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76838

摘要： The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The semiconductor device manufacturing method comprises the steps of preparing a substrate 21 from a surface of which copper wirings 23 are exposed, and forming an interlayer insulating film having a low dielectric constant on the substrate 21, wherein the interlayer insulating film is formed of a multi-layered insulating film including a insulating film 24 that contacts with the copper wirings 23, and the insulating film 24 is formed by plasmanizing a film forming gas containing an alkyl compound having an Si—O—Si bond and one oxygen-containing gas selected from the group consisting of N2O, H2O, and CO2, whose flow rate is equal to or less than a flow rate of the siloxane, to react mutually.

摘要翻译： 本发明涉及通过涂覆铜布线形成具有低介电常数的层间绝缘膜的半导体器件制造方法。 半导体器件制造方法包括从衬底21暴露的表面制备衬底21，并且在衬底21上形成具有低介电常数的层间绝缘膜的步骤，其中层间绝缘膜由多 包括与铜布线23接触的绝缘膜24的绝缘膜，绝缘膜24通过将含有具有Si-O-Si键的烷基化合物和一种含氧气体的成膜气体等离子化而形成，该含氧气体选自 由流动相等于或小于硅氧烷流量的N2O，H2O和CO2组成的组相互反应。